SQJ868EP-T1_GE3

SQJ868EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Single • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D 6. 15 m m m 1 13 m 5. Top View 3 S 4 G 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View G PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) at VGS = 10 V ID (A) S 58 Configuration Package N-Channel MOSFET 0.00735 Single PowerPAK SO-8L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C TC = 125 °C Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 58 IS 43 230 IAS 35 EAS 61 TJ, Tstg Soldering recommendations (peak temperature) c, d V 33 IDM PD UNIT 48 16 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount b SYMBOL LIMIT RthJA 85 RthJC 3.1 UNIT °C/W Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. When mounted on 1" square PCB (FR4 material) c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S17-0774-Rev. B, 22-May-17 Document Number: 65435 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ868EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 250 V nA μA VGS = 10 V VDS ≥ 5 V 30 - - VGS = 10 V ID = 14 A - 0.00620 0.00735 VGS = 10 V ID = 14 A, TJ = 125 °C - - 0.01200 VGS = 10 V ID = 14 A, TJ = 175 °C - - 0.01500 - 85 - - 1951 2450 - 295 370 - 110 140 - 36 55 - 8 - - 6 - 1 2.2 4.5 - 10 15 - 9 14 - 26 40 - 8 12 - - 230 A - 0.8 1.1 V VDS = 14 V, ID = 16 A A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VGS = 10 V VDS = 20 V, f = 1 MHz VDS = 20 V, ID = 20 A f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf pF nC Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD IF = 15 A, VGS = 0 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0774-Rev. B, 22-May-17 Document Number: 65435 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ868EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 50 50 10000 10000 VGS = 10 V thru 5 V 20 VGS = 4 V 10 1000 30 1st line 2nd line 1000 30 2nd line ID - Drain Current (A) 40 1st line 2nd line 2nd line ID - Drain Current (A) 40 20 100 TC = 25 °C 10 TC = 125 °C TC = -55 °C VGS = 3 V 0 0 10 0 2 4 6 8 10 10 0 2 4 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 150 1st line 2nd line TC = 25 °C 100 TC = 125 °C 10000 TC = -55 °C 120 TC = 25 °C 1000 90 1st line 2nd line 1000 6 2nd line gfs - Transconductance (S) 10000 8 2nd line ID - Drain Current (A) 10 Axis Title Axis Title 2 8 VDS - Drain-to-Source Voltage (V) 2nd line 10 4 6 60 TC = 125 °C 100 30 TC = -55 °C 0 0 10 2 4 6 8 10 10 0 5 10 VGS - Gate-to-Source Voltage (V) 2nd line ID - Drain Current (A) 2nd line Transfer Characteristics Transconductance Axis Title 0.010 100 0.005 VGS = 10 V 0.000 10 30 40 50 2nd line RDS(on) - On-Resistance (Normalized) 1000 0.015 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.020 20 25 2.0 10000 10 20 Axis Title 0.025 0 15 10000 ID = 14 A VGS = 10 V 1.7 1000 1.4 VGS = 6 V 1.1 100 0.8 0.5 10 -50 -25 0 25 50 75 100 125 150 175 ID - Drain Current (A) 2nd line TJ - Junction Temperature (°C) 2nd line On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature S17-0774-Rev. B, 22-May-17 1st line 2nd line 0 Document Number: 65435 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ868EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 1 mA 10 2nd line IS - Source Current (A) 52 46 100 43 40 0 25 50 0.1 100 0.01 0.001 10 -50 -25 10 0 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line Drain Source Breakdown vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.05 0.5 10000 10000 0.1 1000 0.03 TJ = 150 °C 0.02 100 0.01 ID = 5 mA 1000 -0.3 1st line 2nd line 2nd line VGS(th) Variance (V) 0.04 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1000 TJ = 25 °C TJ = 150 °C 1 1st line 2nd line 1000 49 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 55 -0.7 100 ID = 250 μA -1.1 TJ = 25 °C 0.00 -1.5 10 0 2 4 6 8 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 1000 IDM Limited 100 ID - Drain Current (A) Limited by RDS(on)* 100 μs 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 0.01 0.01 TC = 25 °C Single Pulse BVDSS Limited 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area S17-0774-Rev. B, 22-May-17 Document Number: 65435 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ868EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65435. S17-0774-Rev. B, 22-May-17 Document Number: 65435 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 Revision: 05-Aug-2019 Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 q 2.96 0° - 0.117 10° 0° - 10° ECN: S19-0643-Rev. B, 05-Aug-2019 DWG: 6044 Note • Millimeters will gover Revision: 05-Aug-2019 Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2021 1 Document Number: 91000