SQJ912AEP
www.vishay.com
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L Dual
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• AEC-Q101 qualified d
D1
D2
6.
15
m
m
m
1
13
5.
m
Top View
4
G2
2
3 G1
S2
1
S1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1
D2
Bottom View
PRODUCT SUMMARY
VDS (V)
40
RDS(on) (Ω) at VGS = 10 V
0.0093
RDS(on) (Ω) at VGS = 4.5 V
0.0111
ID (A) per leg
30
Configuration
Dual
G1
G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ORDERING INFORMATION
Package
PowerPak SO-8L
Lead (Pb)-free and halogen-free
SQJ912AEP
(for detailed order number please see www.vishay.com/doc?79771)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
40
Gate-source voltage
VGS
± 20
Continuous drain current a
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
29
30
IDM
120
IAS
26
EAS
34
TJ, Tstg
Soldering recommendations (peak temperature) e, f
V
30
IS
PD
UNIT
48
16
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
LIMIT
RthJA
85
RthJC
3.1
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
d. Parametric verification ongoing
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S21-1246-Rev. B, 10-Jan-2022
Document Number: 62876
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SQJ912AEP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0 V, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
-
-
50
150
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = 40 V, TJ = 125 °C
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
On-state drain current a
ID(on)
VGS = 10 V
VDS ≥ 5 V
30
-
-
VGS = 10 V
ID = 9.7 A
-
0.0077
0.0093
VGS = 4.5 V
ID = 8.9 A
-
0.0093
0.0111
VGS = 10 V
ID = 9.7 A, TJ = 125 °C
-
-
0.0138
VGS = 10 V
ID = 9.7 A, TJ = 175 °C
Drain-source on-state resistance a
Forward transconductance b
RDS(on)
gfs
VDS = 15 V, ID = 10 A
-
-
0.0169
-
58
1835
V
nA
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
Rg
VGS = 0 V
VGS = 10 V
VDS = 20 V, f = 1 MHz
VDS = 20 V, ID = 11.3 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 20 V, RL = 20 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω
tf
-
1438
-
217
271
-
91
114
-
25.6
38
-
4
-
-
4
-
0.72
1.44
2.2
-
10
15
pF
nC
Ω
-
9
14
-
23
35
-
11
17
-
-
120
A
-
0.8
1.1
V
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = 6.5 A, VGS = 0 V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-1246-Rev. B, 10-Jan-2022
Document Number: 62876
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ912AEP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
50
VGS = 10 V thru 4 V
32
ID - Drain Current (A)
ID - Drain Current (A)
40
30
20
10
24
TC = 25 °C
16
8
VGS = 3 V
TC = 125 °C
TC = - 55 °C
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
5
96
TC = 25 °C
gfs - Transconductance (S)
ID - Drain Current (A)
TC = - 55 °C
80
4
3
2
TC = 25 °C
1
64
48
TC = 125 °C
32
16
TC = 125 °C
TC = - 55 °C
0
0
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
0
5
3
2500
0.020
2000
C - Capacitance (pF)
0.025
0.015
VGS = 4.5 V
0.010
0.005
6
9
ID - Drain Current (A)
12
15
32
40
Transconductance
Transfer Characteristics
RDS(on) - On-Resistance (Ω)
5
Ciss
1500
1000
500
VGS = 10 V
Coss
Crss
0
0.000
0
8
16
24
ID - Drain Current (A)
Capacitance
S21-1246-Rev. B, 10-Jan-2022
32
40
0
8
16
24
VDS - Drain-to-Source Voltage (V)
Gate Charge
Document Number: 62876
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ912AEP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
52
ID = 11.3 A
VDS = 20 V
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
8
6
4
2
0
48
46
44
42
40
0
6
12
18
24
30
Qg - Total Gate Charge (nC)
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
Gate Charge
Drain-Source Breakdown vs. Junction Temperature
150
175
0.05
100
0.04
RDS(on) - On-Resistance (Ω)
10
IS - Source Current (A)
ID = 250 μA
50
TJ = 150 °C
1
0.1
TJ = 25 °C
0.03
0.02
0.01
0.01
0.001
0.00
TJ = 25 °C
TJ = 150 °C
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0
1.2
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
0.5
2.0
VGS = 10 V
ID = 11.3 A
0.2
VGS(th) Variance (V)
RDS(on) - On-Resistance
(Normalized)
1.7
1.4
VGS = 4.5 V
1.1
- 0.1
ID = 5 mA
- 0.4
ID = 250 μA
- 0.7
0.8
- 1.0
0.5
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
On-Resistance vs. Junction Temperature
S21-1246-Rev. B, 10-Jan-2022
- 50 - 25
0
25
50
75 100
TJ - Temperature (°C)
125
150
175
Threshold Voltage
Document Number: 62876
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ912AEP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
ID - Drain Current (A)
100
10
1 ms
ID Limited
10 ms
100 ms, 1 s, 10 s, DC
1
Limited by RDS(on)*
0.1
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10- 4
10- 3
4. Surface Mounted
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S21-1246-Rev. B, 10-Jan-2022
Document Number: 62876
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ912AEP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62876.
S21-1246-Rev. B, 10-Jan-2022
Document Number: 62876
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 2
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L1
L
L1
A1
θ
e
D1
b3
b4
0.25 gauge line
Backside view (single)
D
Topside view (single)
b2
E1
E
E2
W2
W3
W1
F
K
D3
D3
L1
D2
b
b1
e
b3
D1
b4
Backside view (dual)
D
C
A
Topside view (dual)
Document Number: 66934
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Nov-2021
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
2.75
2.85
2.95
0.108
0.112
0.116
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
θ
2.96
0°
-
0.117
10°
0°
-
10°
ECN: C21-1498-Rev. C, 01-Nov-2021
DWG: 6044
Note
• Millimeters will govern
Document Number: 66934
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Nov-2021
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL
6.7500
(0.266)
5.1300
(0.202)
0.4100
(0.016)
0, 0
1.7300
(0.068)
0.5000
(0.020)
1.9800
(0.078)
0.9150
(0.036)
0.5850
(0.023)
0.7200
(0.028)
2.1100
(0.083)
3.0750
(0.121)
7.7500
(0.305)
0.5100
(0.020)
0.2550
(0.010)
6.1500
(0.242)
3.9900
(0.157)
2.5650
(0.101)
0.4700
(0.019)
1.2700
(0.050)
0.4100
(0.016)
Recommended Minimum Pads
Dimensions in mm (inches)
Keep-out 6.75 (0.266) x 7.75 (0.305)
Revision: 07-Feb-12
1
Document Number: 63817
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
