SQJ951EP
www.vishay.com
Vishay Siliconix
Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L Dual
• TrenchFET® Power MOSFET
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
D1
D2
6.
15
m
m
1
3
.1
m
3
4 S2
G2
m
5
Top View
1
2 S1
G1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S1
S2
Bottom View
PRODUCT SUMMARY
VDS (V)
G1
G2
- 30
RDS(on) () at VGS = - 10 V
0.017
RDS(on) () at VGS = - 4.5 V
0.036
ID (A)
- 30
D1
D2
Configuration
Dual
P-Channel MOSFET
P-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK SO-8L
Lead (Pb)-free and halogen-free
SQJ951EP
(for detailed order number please see www.vishay.com/doc?79771)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
SYMBOL
VDS
LIMIT
- 30
Gate-source voltage
VGS
± 20
TC = 25 °C a
Continuous drain current
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
L = 0.1 mH
Single pulse avalanche energy
TC = 25 °C
Maximum power dissipation b
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
ID
- 28
- 30
IDM
- 120
IAS
- 27
EAS
36.5
TJ, Tstg
e, f
V
- 30
IS
PD
UNIT
56
18.5
- 55 to + 175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
SYMBOL
PCB
mount c
LIMIT
RthJA
85
RthJC
2.7
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. Parametric verification ongoing
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S21-0678-Rev. B, 21-Jun-2021
Document Number: 63658
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ951EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0, ID = - 250 μA
- 30
-
-
VGS(th)
VDS = VGS, ID = - 250 μA
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = - 30 V
-
-
-1
-
-
- 50
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = - 30 V, TJ = 125 °C
VGS = 0 V
VDS = - 30 V, TJ = 175 °C
-
-
- 150
On-state drain current a
ID(on)
VGS = - 10 V
VDS = - 5 V
- 30
-
0.017
Drain-source on-state resistance a
Forward transconductance b
RDS(on)
gfs
VGS = - 10 V
ID = - 7.5 A
-
0.014
VGS = - 10 V
ID = - 7.5A, TJ = 125 °C
-
-
0.034
VGS = - 10 V
ID = - 7.5 A, TJ = 175 °C
-
-
0.039
VGS = - 4.5 V
ID = - 5 A
-
0.030
0.036
VDS = - 15 V, ID = - 7.5 A
-
18
-
-
1345
1680
-
330
415
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
-
245
305
Total gate charge c
Qg
-
33
50
-
5.5
-
-
9.4
-
3
6.31
10.5
-
12
18
-
12
18
-
39
59
-
28
42
-
-
- 120
A
-
- 0.8
- 1.2
V
Gate-source
charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay time
c
Rise time c
Turn-off delay time
Fall time c
VGS = - 10 V
VDS = - 10 V, f = 1 MHz
VDS = - 15 V, ID = - 9 A
f = 1 MHz
td(on)
tr
c
VGS = 0 V
td(off)
VDD = - 15 V, RL = 1.66
ID - 9 A, VGEN = - 10 V, Rg = 6
tf
pF
nC
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = - 4.5 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0678-Rev. B, 21-Jun-2021
Document Number: 63658
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ951EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
30
30
VGS = 10 V thru 5 V
24
18
ID - Drain Current (A)
ID - Drain Current (A)
24
VGS = 4 V
12
18
12
TC = 25 °C
6
6
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
Output Characteristics
0.10
T C = - 55 °C
TC = 25 °C
24
0.08
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
10
Transfer Characteristics
30
TC = 125 °C
18
12
6
0.06
VGS = 4.5 V
0.04
0.02
0
0.00
0
4
8
12
ID - Drain Current (A)
16
20
VGS = 10 V
0
Transconductance
6
12
18
ID - Drain Current (A)
24
30
On-Resistance vs. Drain Current
2500
10
2000
8
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Ciss
1500
1000
Coss
500
ID = 9 A
VDS = 15 V
6
4
2
Crss
0
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
0
7
14
21
28
35
Qg - Total Gate Charge (nC)
Gate Charge
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
S21-0678-Rev. B, 21-Jun-2021
Document Number: 63658
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ951EP
www.vishay.com
Vishay Siliconix
1.0
1.7
VGS = 10 V
ID = 9 A
0.7
ID = 250 μA
VGS(th) - Variance (V)
RDS(on) - On-Resistance
(Normalized)
1.5
1.3
VGS = 4.5 V
1.1
0.4
ID = 5 mA
0.1
- 0.2
0.9
0.7
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
- 0.5
- 50 - 25
175
0
125
150
175
125
150
175
Threshold Voltage
On-Resistance vs. Junction Temperature
- 30
VDS - Drain-to-Source Voltage (V)
0.15
0.12
RDS(on) - On-Resistance (Ω)
25
50
75 100
TJ - Temperature (°C)
0.09
0.06
TJ = 150 °C
0.03
- 32
ID = 1 mA
- 34
- 36
- 38
TJ = 25 °C
- 40
- 50 - 25
0.00
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
0
25
50
75
100
TJ - Junction Temperature (°C)
BVDSS vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
100
IDM Limited
100
Limited by RDS(on)
TJ = 150 °C
ID - Drain Current (A)
IS - Source Current (A)
1 ms
a
10
1
0.1
TJ = 25 °C
0.01
100 ms
1 s, 10 s, DC
1
0.1
0.001
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.2
10 ms
10
0.01
0.01
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
VDS - Drain-to-Source Voltage (V)
100
Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
S21-0678-Rev. B, 21-Jun-2021
Document Number: 63658
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ951EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10- 4
10- 3
4. Surface Mounted
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 5
10- 4
10- 3
10- 2
Square Wave Pulse Duration (s)
10- 1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63658.
S21-0678-Rev. B, 21-Jun-2021
Document Number: 63658
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 2
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L1
L
L1
A1
θ
e
D1
b3
b4
0.25 gauge line
Backside view (single)
D
Topside view (single)
b2
E1
E
E2
W2
W3
W1
F
K
D3
D3
L1
D2
b
b1
e
b3
D1
b4
Backside view (dual)
D
C
A
Topside view (dual)
Document Number: 66934
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Nov-2021
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
2.75
2.85
2.95
0.108
0.112
0.116
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
θ
2.96
0°
-
0.117
10°
0°
-
10°
ECN: C21-1498-Rev. C, 01-Nov-2021
DWG: 6044
Note
• Millimeters will govern
Document Number: 66934
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For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Nov-2021
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL
6.7500
(0.266)
5.1300
(0.202)
0.4100
(0.016)
0, 0
1.7300
(0.068)
0.5000
(0.020)
1.9800
(0.078)
0.9150
(0.036)
0.5850
(0.023)
0.7200
(0.028)
2.1100
(0.083)
3.0750
(0.121)
7.7500
(0.305)
0.5100
(0.020)
0.2550
(0.010)
6.1500
(0.242)
3.9900
(0.157)
2.5650
(0.101)
0.4700
(0.019)
1.2700
(0.050)
0.4100
(0.016)
Recommended Minimum Pads
Dimensions in mm (inches)
Keep-out 6.75 (0.266) x 7.75 (0.305)
Revision: 07-Feb-12
1
Document Number: 63817
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
