SQJ963EP-T1_GE3

SQJ963EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested - 60 RDS(on) (Ω) at VGS = - 10 V 0.085 RDS(on) (Ω) at VGS = - 4.5 V 0.115 ID (A) per leg -8 Configuration Dual • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8L Dual m 5m 6.1 S1 5.1 3m m S2 D 2 G1 D 1 4 G2 S2 G2 3 2 G1 1 S1 Bottom View D1 D2 P-Channel MOSFET P-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ963EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 TC = 25 °Ca Continuous Drain Current Continuous Source Current (Diode ID TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range -7 IS -8 - 25 IAS - 20 EAS 20 TJ, Tstg Soldering Recommendations (Peak Temperature)e, f V -8 IDM PD TC = 125 °C UNIT 27 9 - 55 to + 175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Case (Drain) SYMBOL LIMIT RthJA 85 RthJC 5.5 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S11-1372-Rev. A, 18-Jul-11 1 Document Number: 67581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ963EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = - 250 μA - 60 - - VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V VDS = - 60 V - - -1 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 60 V, TJ = 125 °C - - - 50 VGS = 0 V VDS = - 60 V, TJ = 175 °C - - - 150 On-State Drain Currenta ID(on) VGS = - 10 V VDS ≤ - 5 V - 12 - - UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VGS = - 10 V ID = - 3.5 A - 0.067 0.085 VGS = - 10 V ID = - 3.5 A, TJ = 125 °C - - 0.143 VGS = - 10 V ID = - 3.5 A, TJ = 175 °C - - 0.176 VGS = - 4.5 V ID = - 2.5 A - 0.087 0.115 - 10 - - 912 1140 - 100 125 VDS = - 15 V, ID = - 3.5 A V nA μA A Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 60 75 Total Gate Chargec Qg - 26.5 40 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VGS = - 10 V VDS = - 30 V, f = 1 MHz VDS = - 30 V, ID = - 4.3 A f = 1 MHz Rg td(on) tr td(off) VDD = - 30 V, RL = 8.8 Ω ID ≅ - 3.4 A, VGEN = - 10 V, Rg = 1 Ω tf - 3.8 - - 5.8 - 3.4 6.9 10.4 - 11 17 - 13 20 - 36 54 - 8 12 pF nC Ω ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 3 A, VGS = 0 V - - - 25 A - - 0.84 - 1.2 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-1372-Rev. A, 18-Jul-11 2 Document Number: 67581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ963EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 25 25 VGS = 10 V thru 5 V 20 ID - Drain Current (A) ID - Drain Current (A) 20 15 VGS = 4 V 10 15 TC = 25 °C 10 5 5 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0 10 2 Output Characteristics 4 6 8 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 1.5 20 1.2 16 gfs - Transconductance (S) ID - Drain Current (A) TC = 25 °C 0.9 0.6 TC = 25 °C 0.3 TC = - 55 °C 12 TC = 125 °C 8 4 TC = 125 °C TC = - 55 °C 0 0.0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 5 2 Transfer Characteristics 0.50 1500 0.40 1200 VGS = 4.5 V 0.30 0.20 8 10 Ciss 900 600 300 VGS = 10 V 0.10 4 6 ID - Drain Current (A) Transconductance C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 10 Coss Crss 0 0.00 0 6 12 18 ID - Drain Current (A) 24 0 30 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current S11-1372-Rev. A, 18-Jul-11 10 Capacitance 3 Document Number: 67581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ963EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 2.1 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 4.3 A 8 VDS = 30 V 6 4 2 0 0 6 12 18 24 VGS = 10 V 1.5 VGS = 4.5 V 1.2 0.9 0.6 - 50 - 25 30 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.5 100 RDS(on) - On-Resistance (Ω) 10 TJ = 150 °C IS - Source Current (A) ID = 3.5 A 1.8 1 0.1 TJ = 25 °C 0.01 0.4 0.3 0.2 TJ = 150 °C 0.1 TJ = 25 °C 0.001 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 4 6 8 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VDS - Drain-to-Source Voltage (V) ID = 250 μA 0.8 VGS(th) Variance (V) 10 - 60 1.1 0.5 ID = 5 mA 0.2 - 0.1 - 0.4 - 50 - 25 2 0 25 50 75 100 125 150 ID = 1 mA - 65 - 70 - 75 - 80 - 50 - 25 175 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature S11-1372-Rev. A, 18-Jul-11 4 Document Number: 67581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ963EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited 100 μs ID - Drain Current (A) 10 Limited by R DS(on)* ID Limited 1 1 ms 10 ms 100 ms, 1 s, 10 s, DC 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S11-1372-Rev. A, 18-Jul-11 5 Document Number: 67581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ963EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67581. S11-1372-Rev. A, 18-Jul-11 6 Document Number: 67581 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 1 W E1 E E2 W2 W3 W1 b2 D2 b b1 L L1 L1 A1 e θ D1 D b3 b4 0.25 gauge line Topside view Backside view (single) E2 W2 C A W3 W1 F K D3 D3 D2 b3 b4 Backside view (dual) Revision: 05-Aug-2019 Document Number: 69003 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS MIN. NOM. INCHES MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 3.18 3.28 3.38 0.125 0.129 0.133 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117  0° - 10° 0° - 10° ECN: S19-0643-Rev. E, 05-Aug-2019 DWG: 5976 Note • Millimeters will gover Revision: 05-Aug-2019 Document Number: 69003 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL 6.7500 (0.266) 5.1300 (0.202) 0.4100 (0.016) 0, 0 1.7300 (0.068) 0.5000 (0.020) 1.9800 (0.078) 0.9150 (0.036) 0.5850 (0.023) 0.7200 (0.028) 2.1100 (0.083) 3.0750 (0.121) 7.7500 (0.305) 0.5100 (0.020) 0.2550 (0.010) 6.1500 (0.242) 3.9900 (0.157) 2.5650 (0.101) 0.4700 (0.019) 1.2700 (0.050) 0.4100 (0.016) Recommended Minimum Pads Dimensions in mm (inches) Keep-out 6.75 (0.266) x 7.75 (0.305) Revision: 07-Feb-12 1 Document Number: 63817 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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