SQJA00EP-T1_GE3

SQJA00EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Single • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D 6. 15 m m m 1 3 .1 m 5 Top View 3 S 4 G 2 S 1 S • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V G 60 0.0130 ID (A) per leg 30 Configuration Single Package S N-Channel MOSFET PowerPAK SO-8L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °C a Continuous Drain Current Continuous Source Current (Diode conduction) TC = 125 °C a Pulsed Drain Current b Single Pulse Avalanche Current L = 0.1 mH Single Pulse Avalanche Energy TC = 25 °C Maximum Power Dissipation b TC = 125 °C 25.6 IS 30 84 IAS 23 EAS 26.5 PD d, e V 30 IDM TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) ID UNIT 48 16 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB mount c SYMBOL LIMIT RthJA 70 RthJC 3.1 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S16-1760-Rev. A, 05-Sep-16 Document Number: 77783 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA00EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 Zero Gate Voltage Drain Current IDSS Gate-Source Threshold Voltage On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic ID(on) RDS(on) gfs VGS = 0 V VDS = 60 V - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 150 VGS = 10 V VDS  5 V 30 - - VGS = 10 V ID = 10 A - 0.0105 0.0130 VGS = 10 V ID = 10 A, TJ = 125 °C - - 0.0208 VGS = 10 V ID = 10 A, TJ = 175 °C - - 0.0255 - 36 - - 1300 1700 - 550 750 VDS = 15 V, ID = 10 A V nA μA A  S b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 28 40 Total Gate Charge c Qg - 20 35 - 6 - - 3 - f = 1 MHz 0.23 0.5 0.8 - 13 25 VDD = 30 V, RL = 20  ID  1.5 A, VGEN = 10 V, Rg = 1  - 3 10 - 23 40 - 22 40 Gate-Source Charge c Gate-Drain Charge c VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 30 V, ID = 1.5 A Qgd Gate Resistance Turn-On Delay Time Qgs VGS = 0 V Rg c Rise Time c Turn-Off Delay Time c Fall Time c td(on) tr td(off) tf pF nC  ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 10 A, VGS = 0 V - - 84 A - 0.85 1.2 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1760-Rev. A, 05-Sep-16 Document Number: 77783 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA00EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 70 10000 10000 VGS = 10 V thru 6 V 56 100 20 1000 42 28 1st line 2nd line 40 2nd line ID - Drain Current (A) 1000 VGS = 5 V 60 1st line 2nd line TC = 25 °C 100 14 TC = 125 °C VGS = 4 V TC = -55 °C 0 0 10 0 2 4 6 8 10 0 10 2 Output Characteristics Transfer Characteristics Axis Title TC = 25 °C 1000 60 40 100 TC = 125 °C 20 2nd line RDS(on) - On-Resistance (Ω) TC = -55 °C 1st line 2nd line 2nd line gfs - Transconductance (S) 80 12 18 24 10000 0.020 1000 0.015 VGS = 10 V 0.010 100 0.005 0.000 10 6 30 10 0 16 32 48 64 ID - Drain Current (A) 2nd line ID - Drain Current (A) 2nd line Transconductance On-Resistance vs. Drain Current Axis Title 10 1200 1000 1st line 2nd line 900 Coss 100 300 Crss 0 10 30 45 60 10000 ID = 1.5 A VDS = 30 V 8 1000 6 1st line 2nd line Ciss 2nd line VGS - Gate-to-Source Voltage (V) 10000 15 4 100 2 0 10 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S16-1760-Rev. A, 05-Sep-16 80 Axis Title 1500 600 10 0.025 10000 0 2nd line C - Capacitance (pF) 8 VGS - Gate-to-Source Voltage (V) 2nd line Axis Title 0 6 VDS - Drain-to-Source Voltage (V) 2nd line 100 0 4 1st line 2nd line 2nd line ID - Drain Current (A) 80 25 Document Number: 77783 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA00EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 ID = 5 A 10000 VGS = 10 V 10 1000 1.4 1.1 100 0.8 0.5 0 25 50 1000 1 0.1 0.01 10 0 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.10 0.5 10000 10000 0.1 1000 0.06 0.04 100 TJ = 150 °C 0.02 1000 -0.3 1st line 2nd line 2nd line VGS(th) Variance (V) 0.08 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 100 TJ = 25 °C 0.001 10 -50 -25 TJ = 150 °C 1st line 2nd line 2nd line IS - Source Current (A) 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 ID = 5 mA -0.7 100 ID = 250 μA -1.1 TJ = 25 °C 0.00 -1.5 10 0 2 4 6 8 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 10000 ID = 1 mA 76 1000 73 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 79 70 100 67 64 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature S16-1760-Rev. A, 05-Sep-16 Document Number: 77783 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA00EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 10000 IDM limited 100 μs 1000 10 ID limited 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 100 Limited by RDS(on) (1) 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) BVDSS limited 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Normalized Effective Transient Thermal Impedance Safe Operating Area 1 Duty cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 70 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single pulse 4. Surface nounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S16-1760-Rev. A, 05-Sep-16 Document Number: 77783 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA00EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1 Duty cycle = 0.5 1000 0.2 0.1 1st line Normalized Effective Transient Thermal Impedance 10000 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.                                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77783. S16-1760-Rev. A, 05-Sep-16 Document Number: 77783 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 W E1 E E2 W2 W3 W1 b2 D2 b b1 L1 L L1 A1 θ e D1 b3 b4 0.25 gauge line Backside view (single) D Topside view (single) b2 E1 E E2 W2 W3 W1 F K D3 D3 L1 D2 b b1 e b3 D1 b4 Backside view (dual) D C A Topside view (dual) Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Nov-2021 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 θ 2.96 0° - 0.117 10° 0° - 10° ECN: C21-1498-Rev. C, 01-Nov-2021 DWG: 6044 Note • Millimeters will govern Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Nov-2021 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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