SQJA16EP
www.vishay.com
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
6.
15
m
m
1
4
G
m
0m
4.9
Top View
3
S
2
S
1
S
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Bottom View
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
0.0030
RDS(on) (Ω) at VGS = 4.5 V
0.0047
ID (A)
N-Channel MOSFET
278
Configuration
Package
G
60
S
Single
PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
60
Gate-source voltage
VGS
± 20
TC = 25 °C a
Continuous drain current
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
L = 0.1 mH
Single pulse avalanche energy
TC = 25 °C
Maximum power dissipation
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
ID
166
454
IDM
575
IAS
48
EAS
115
TJ, Tstg
d
V
278
IS
PD
UNIT
500
166
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
LIMIT
RthJA
42
RthJC
0.30
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
S21-0232-Rev. A, 15-Mar-2021
Document Number: 76726
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJA16EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
VDS
VGS = 0, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 60 V
-
-
1
VGS = 0 V
VDS = 60 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS ≥ 5 V
30
-
-
VGS = 10 V
ID = 15 A
-
0.0026
0.0030
VGS = 10 V
ID = 15 A, TJ = 125 °C
-
-
0.00516
VGS = 10 V
ID = 15 A, TJ = 175 °C
-
-
0.0065
VGS = 4.5 V
ID = 15 A
-
0.0036
0.0047
-
75
-
VDS = 15 V, ID = 10 A
V
nA
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay
time c
Rise time c
Turn-off delay time c
Fall time c
-
3915
5485
-
1780
2500
-
65
95
-
56
84
-
13
-
-
5
-
f = 1 MHz
0.6
1.3
2.0
-
13
20
VDD = 30 V, RL = 3.0 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
-
4
6
-
34
50
-
6
9
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 30 V, ID = 10 A
td(on)
tr
td(off)
tf
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
Body diode reverse recovery time
trr
IF = 15 A, VGS = 0 V
-
-
575
-
-
1.1
V
-
54
108
ns
-
64
128
nC
-
26
-
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
30
-
IRM(REC)
-
2.0
-
Body diode peak reverse recovery
current
IF = 8 A, di/dt = 100 A/μs
A
ns
A
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0232-Rev. A, 15-Mar-2021
Document Number: 76726
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJA16EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
300
10000
300
TC = -55 °C
VGS = 10 V thru 4 V
180
120
100
VGS = 3 V
60
240
2nd line
gfs - Transconductance (S)
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
240
TC = 25 °C
180
TC = 125 °C
120
60
10
0
0
2
4
6
8
0
10
0
20
40
60
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Output Characteristics
Transconductance
Axis Title
100
Axis Title
10000
200
10000
10 000
Ciss
1st line
2nd line
TC = 25 °C
80
100
TC = 125 °C
Coss
1000
1000
1st line
2nd line
1000
120
2nd line
C - Capacitance (pF)
160
2nd line
ID - Drain Current (A)
80
100
100
Crss
40
TC = -55 °C
10
0
0
2
4
6
8
10
10
10
0
12
48
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Capacitance
Axis Title
100
0.002
VGS = 10 V
10
0
20
40
60
80
100
ID = 10 A
VDS = 30 V
8
1000
6
1st line
2nd line
VGS = 4.5 V
2nd line
VGS - Gate-to-Source Voltage (V)
1000
0.006
10000
10
0.008
0.004
4
100
2
10
0
0
12
24
36
48
ID - Drain Current (A)
Qg - Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
S21-0232-Rev. A, 15-Mar-2021
60
Axis Title
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
36
VGS - Gate-to-Source Voltage (V)
0.010
0
24
60
Document Number: 76726
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJA16EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
10000
0.020
1000
1.6
VGS = 4.5 V
1.2
100
0.8
0.016
1000
0.012
1st line
2nd line
VGS = 10 V
2nd line
RDS(on) - On-Resistance (Ω)
ID = 10 A
2.0
1st line
2nd line
0.008
TJ = 150 °C
0.004
TJ = 25 °C
10
0.4
-50 -25
0
25
50
10
0
0
75 100 125 150 175
2
4
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to Source Voltage
Axis Title
Axis Title
10000
10000
0.6
ID = 1 mA
0.2
68
100
65
1000
-0.2
ID = 5 mA
-0.6
100
-1.0
10
62
-50 -25
0
25
50
ID = 250 μA
10
-1.4
75 100 125 150 175
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Threshold Voltage
Axis Title
Axis Title
100
1000
10
TJ = 150 °C
1st line
2nd line
1000
1
100
0.1
2nd line
ID - Drain Current (A)
10000
100
ID limited
1000
10
100 μs
Limited by RDS(on)
10
0.6
0.9
1.2
100
1 ms
a
1
10 ms
TC = 25 °C,
single pulse
0.01
0.3
10000
IDM limited
TJ = 25 °C
0
1st line
2nd line
1000
71
2nd line
VGS(th) - Variance (V)
74
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
6
TJ - Junction Temperature (°C)
77
2nd line
IS - Source Current (A)
100
0.1
0.01
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.4
BVDSS limited
100 ms
1 s,
10 10
s, DC
0.1
1
10
VSD - Source-to-Drain Voltage (V)
VDS - Drain-to-Source Voltage (V)
Source Drain Diode Forward Voltage
Safe Operating Area
100
Note
a. VGS > minimum VGS at which RDS(on) is specified
S21-0232-Rev. A, 15-Mar-2021
Document Number: 76726
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJA16EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Duty Cycle = 0.5
0.2
0.1
0.1
1000
0.05
0.02
1st line
Normalized Effective Transient
Thermal Impedance
10000
1
0.01
100
0.001
Single pulse
10
0.0001
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10000
Duty Cycle = 0.5
0.2
1000
0.1
0.1
0.05
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.02
Single pulse
100
0.01
0.001
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76726.
S21-0232-Rev. A, 15-Mar-2021
Document Number: 76726
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L (PPKSO8LWLA) Case Outline 3
b2
D6
D5
E3
E2
E4
E
E1
E5
W4
W1
D5
z2
Pin 1 marking
A1
b
b1
L
0.2 Gauge line
c
e
L1
ɵ
z1
D2
D1
Backside view (single)
A
Topside view
DIM.
MIN.
A
1.00
A1
0.00
b
0.33
b1
0.43
b2
4.00
c
0.15
D1
4.80
D2
3.86
D5
0.51
D6
2.64
e
E
6.05
E1
4.27
E2
3.18
E3
3.48
E4
2.72
E5
0.71
L
0.62
L1
0.92
W1
0.31
W4
0.31
z1
0.37
z2
0.99
θ
0°
ECN: C23-1016-Rev. D, 18-Sep-2023
DWG: 6067
Note
• Millimeter will govern
MILLIMETERS
NOM.
1.05
--0.41
0.51
4.10
0.20
4.90
3.96
0.61
2.74
1.27 BSC
6.15
4.37
3.28
3.58
2.82
0.81
0.72
1.07
0.41
0.36
0.47
1.09
---
INCHES
MAX.
1.10
0.127
0.49
0.59
4.20
0.25
5.00
4.06
0.71
2.84
MIN.
0.039
0.000
0.013
0.017
0.157
0.006
0.189
0.152
0.020
0.104
6.25
4.47
3.38
3.68
2.92
0.91
0.82
1.22
0.51
0.41
0.57
1.19
5°
0.238
0.168
0.125
0.137
0.107
0.028
0.024
0.036
0.012
0.012
0.015
0.039
0°
NOM.
0.041
--0.016
0.020
0.161
0.008
0.193
0.156
0.024
0.108
0.050 BSC
0.242
0.172
0.129
0.141
0.111
0.032
0.028
0.042
0.016
0.014
0.019
0.043
---
MAX.
0.043
0.005
0.019
0.023
0.165
0.010
0.197
0.160
0.028
0.112
0.246
0.176
0.133
0.145
0.115
0.036
0.032
0.048
0.020
0.016
0.022
0.047
5°
Document Number: 76666
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 18-Sep-2023
PAD Pattern
www.vishay.com
Vishay Siliconix
0.3
(0.012)
3.48
(0.137)
6.73
(0.265)
2.82
(0.111)
0.76
(0.030)
4
(R x R
0. 0
00 .2
8)
5.3
(0.209)
2.7
(0.106)
0.71
(0.028)
Recommended Land Pattern PowerPAK® SO-8L Single Short Ear
16
(R x
0. R0
00 .1
4)
1.1
(0.043)
3.96
(0.156)
1.27
(0.050)
0.68
(0.027)
Dimensions in Millimeters (Inches)
Revision: 24-Aug-2021
Document Number: 78020
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
1
Document Number: 91000
