SQJA36EP-T1_GE3

SQJA36EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L • TrenchFET® Gen IV power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D • Qgd/Qgs ratio < 1 optimizes switching characteristics 6. 15 m m 1 4 G m 0m 4.9 Top View 3 S 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View PRODUCT SUMMARY VDS (V) 40 RDS(on) () at VGS = 10 V ID (A) 350 Configuration Package G 0.00124 Single N-Channel MOSFET PowerPAK SO-8L S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C TC = 125 °C Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 350 IS 324 600 IAS 48 EAS 115 TJ, Tstg Soldering recommendations (peak temperature) c V 234 IDM PD UNIT 500 166 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount b SYMBOL LIMIT RthJA 68 RthJC 0.3 UNIT °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. When mounted on 1" square PCB (FR4 material) c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S19-0980-Rev. E, 18-Nov-2019 Document Number: 76588 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA36EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 250 VGS = 10 V VDS  5 V 30 - - VGS = 10 V ID = 15 A - VGS = 10 V ID = 15 A, TJ = 125 °C - - 0.00190 VGS = 10 V ID = 15 A, TJ = 175 °C - - 0.00223 - 95 - VDS = 15 V, ID = 10 A V nA μA A 0.00103 0.00124  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 40 A f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 0.5  ID  40 A, VGEN = 10 V, Rg = 1  tf - 5309 6636 - 1521 1902 - 138 175 - 86 107 - 23.6 - - 6 - 1 1.65 2.64 - 18 24 - 17 21 - 35 44 - 13 17 pF nC  ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr IF = 15 A, VGS = 0 V IF = 40 A, di/dt = 100 A/μs - - 600 - - 1.1 V - 52 68 ns - 36 47 nC Reverse recovery fall time ta - 27 46 Reverse recovery rise time tb - 25 46 IRM(REC) - 1.3 2.2 Body diode peak reverse recovery current A ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0980-Rev. E, 18-Nov-2019 Document Number: 76588 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA36EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 600 10000 10000 50 VGS = 7 V thru 10 V 240 100 VGS = 5 V 1000 30 1st line 2nd line 1000 360 2nd line ID - Drain Current (A) 40 VGS = 6 V 1st line 2nd line 2nd line ID - Drain Current (A) 480 20 TC = 25 °C 100 10 120 0 0 10 0 2 4 6 8 TC = -55 °C TC = 125 °C VGS = 4 V 10 0 10 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 180 10000 160 10000 96 64 TC = 25 °C 100 32 TC = 125 °C 10 2 4 6 8 TC = 125 °C 1000 108 72 100 36 0 10 10 0 12 24 36 48 VGS - Gate-to-Source Voltage (V) 2nd line ID - Drain Current (A) 2nd line Transfer Characteristics Transconductance 60 Axis Title 0.004 10000 8000 0.002 VGS = 7.5 V 0.001 Ciss 6000 1000 1st line 2nd line 0.003 2nd line C - Capacitance (pF) 2nd line RDS(on) - On-Resistance (Ω) TC = 25 °C TC = -55 °C 0 0 144 1st line 2nd line 1000 1st line 2nd line 2nd line ID - Drain Current (A) 128 2nd line gfs - Transconductance (S) TC = -55 °C 4000 VGS = 10 V Crss 0.000 0 30 60 90 ID - Drain Current (A) 2nd line On-Resistance vs. Drain Current S19-0980-Rev. E, 18-Nov-2019 100 Coss 2000 120 0 10 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) 2nd line Capacitance Document Number: 76588 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA36EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 54 2nd line VDS - Drain-to-Source Voltage (V) 10000 1000 6 4 100 2 0 52 51 50 49 48 47 10 0 20 40 60 80 ID = 1 mA 53 1st line 2nd line ID = 40 A VDS = 20 V 8 1st line 2nd line -50 -25 100 0 25 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Gate Charge Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 2.0 10000 100 10000 ID = 30 A 1.7 1000 1.4 VGS = 7.5 V 1.1 100 0.8 0.5 0 25 50 1000 TJ = 150 °C 1 100 0.1 TJ = 25 °C 0.01 10 -50 -25 10 2nd line IS - Source Current (A) VGS = 10 V 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 50 Qg - Total Gate Charge (nC) 2nd line 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 10 75 100 125 150 175 10 0 0.2 0.5 0.7 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title 10000 0.006 1000 ID = 30 A 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.008 0.004 100 TJ = 125°C 0.002 TJ = 25 °C 0.000 10 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) 2nd line On-Resistance vs. Gate-to Source Voltage S19-0980-Rev. E, 18-Nov-2019 Document Number: 76588 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA36EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 1000 IDM limited 10000 ID limited 2nd line ID - Drain Current (A) 100 10 1st line 2nd line 1000 100 μs 1 ms 100 10 ms Limited by RDS(on) a 1 TC = 25 °C, single pulse BVDSS limited 100 ms 1 s, 10 10s, DC 0.1 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified Axis Title 0.7 10000 0.2 ID = 50 A 1000 0.003 0.002 TJ = 150°C 100 2nd line VGS(th) Variance (V) 0.004 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.005 -0.3 ID = 5 mA -0.8 ID = 250 μA -1.3 0.001 TJ = 25 °C 0.000 10 2 4 6 8 10 -1.8 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to Source Voltage Threshold Voltage S19-0980-Rev. E, 18-Nov-2019 Document Number: 76588 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA36EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 68 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76588. S19-0980-Rev. E, 18-Nov-2019 Document Number: 76588 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 3 b2 D6 D5 E1 E3 E2 E E4 E5 W4 W1 D5 z2 A2 A1 L 0.2 Gauge line L1 ɵ c b b1 e z1 D1 D2 Backside view (single) A Topside view DIM. MIN. A 1.00 A1 0.00 A2 0.40 b 0.33 b1 0.43 b2 4.00 c 0.15 D1 4.80 D2 3.86 D5 0.51 D6 2.64 e E 6.05 E1 4.27 E2 3.18 E3 3.48 E4 2.72 E5 0.71 L 0.62 L1 0.92 W1 0.31 W4 0.31 z1 0.37 z2 0.99  0° ECN: S19-0643-Rev. B, 05-Aug-2019 DWG: 6067 Note • Millimeter will govern Revison: 05-Aug-2019 MILLIMETERS NOM. 1.05 --0.45 0.41 0.51 4.10 0.20 4.90 3.96 0.61 2.74 1.27 BSC 6.15 4.37 3.28 3.58 2.82 0.81 0.72 1.07 0.41 0.36 0.47 1.09 --- INCHES MAX. 1.10 0.127 0.50 0.49 0.59 4.20 0.25 5.00 4.06 0.71 2.84 MIN. 0.039 0.000 0.016 0.013 0.017 0.157 0.006 0.189 0.152 0.020 0.104 6.25 4.47 3.38 3.68 2.92 0.91 0.82 1.22 0.51 0.41 0.57 1.19 5° 0.238 0.168 0.125 0.137 0.107 0.028 0.024 0.036 0.012 0.012 0.015 0.039 0° NOM. 0.041 --0.018 0.016 0.020 0.161 0.008 0.193 0.156 0.024 0.108 0.050 BSC 0.242 0.172 0.129 0.141 0.111 0.032 0.028 0.042 0.016 0.014 0.019 0.043 --- MAX. 0.043 0.005 0.020 0.019 0.023 0.165 0.010 0.197 0.160 0.028 0.112 0.246 0.176 0.133 0.145 0.115 0.036 0.032 0.048 0.020 0.016 0.022 0.047 5° Document Number: 76666 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix 0.3 (0.012) 3.48 (0.137) 6.73 (0.265) 2.28 (0.111) 0.76 (0.030) 4 (R x R 0. 0 00 .2 8) 5.3 (0.209) 2.7 (0.106) 0.71 (0.028) Recommended Land Pattern PowerPAK® SO-8L Single Short Ear 16 (R x 0. R0 00 .1 4) 1.1 (0.043) 3.96 (0.156) 1.27 (0.050) 0.68 (0.027) Dimensions in Millimeters (Inches) Revision: 09-Jul-2020 Document Number: 78020 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2021 1 Document Number: 91000