SQJA37EP-T1_GE3

SQJA37EP www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Single • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D 6. 15 m m m 1 3 .1 m 4 G 5 Top View 3 S 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S Bottom View PRODUCT SUMMARY VDS (V) G -30 RDS(on) (Ω) at VGS = -10 V 0.0092 RDS(on) (Ω) at VGS = -4.5 V 0.0146 ID (A) Configuration -30 D Single P-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and halogen-free SQJA37EP (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -30 Gate-source voltage VGS ± 20 TC = 25 °C Continuous drain current a TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current L = 0.1 mH Single pulse avalanche energy TC = 25 °C Maximum power dissipation b TC = 125 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) ID -30 -30 IDM -120 IAS -26 EAS 33.8 TJ, Tstg d, e V -30 IS PD UNIT 45 15 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 70 RthJC 3.3 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). For PowerPAK SO-8L, the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S22-0224-Rev. B, 07-Mar-2022 Document Number: 75171 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA37EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = -250 μA -30 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage IGSS Zero gate voltage drain current On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance IDSS b RDS(on) gfs - - ± 100 VGS = 0 V VDS = -30 V - - -1 VGS = 0 V VDS = -30 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -30 V, TJ = 175 °C - - -200 VGS = -10 V VDS ≥ -5 V -20 - - VGS = -10 V ID = -6 A - 0.0076 0.0092 VGS = -10 V ID = -6 A, TJ = 125 °C - - 0.0112 VGS = -10 V ID = -6 A, TJ = 175 °C - - 0.0122 VGS = -4.5 V ID = -5 A - 0.0120 0.0146 - 32 - - 3620 4900 - 360 500 - 346 470 VDS = -15 V, ID = -6 A V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c VGS = 0 V VGS = -10 V VDS = -25 V, f = 1 MHz VDS = -15 V, ID = -5 A f = 1 MHz Rg td(on) tr td(off) VDD = -15 V, RL = 3 Ω ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics - 65 100 - 9 - - 12 - 2.4 4.8 7.2 - 12 20 - 4 10 - 64 100 - 24 40 pF nC Ω ns b Pulsed current a ISM Forward voltage VSD IF = -6 A, VGS = 0 V - - -120 A - -0.78 -1.2 V Body diode reverse recovery time trr - 22 45 ns Body diode reverse recovery charge Qrr - 11 25 nC Reverse recovery fall time ta - 11 - Reverse recovery rise time tb - 11 - IRM(REC) - -0.9 - Body diode peak reverse recovery current IF = -4 A, di/dt = 100 A/μs ns A Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0224-Rev. B, 07-Mar-2022 Document Number: 75171 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA37EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 150 10000 10000 90 VGS = 10 V thru 6 V VGS = 5 V VGS = 4 V 60 100 1000 54 1st line 2nd line 1000 90 2nd line ID - Drain Current (A) 72 1st line 2nd line 2nd line ID - Drain Current (A) 120 36 18 30 100 TC = 25 °C TC = 125 °C VGS = 3 V TC = -55 °C 0 0 10 0 2 4 6 8 10 0 10 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 10 Axis Title 75 10000 0.050 TC = -55 °C TC = 125 °C 30 100 15 2nd line RDS(on) - On-Resistance (Ω) 1000 45 1st line 2nd line 2nd line gfs - Transconductance (S) TC = 25 °C 60 0.040 0.030 0.020 VGS = 4.5 V 0.010 VGS = 10 V 0 10 0 4 8 12 16 0.000 20 0 20 Transconductance On-Resistance vs. Drain Current Axis Title Axis Title 2000 100 1000 Coss Crss 0 10 18 24 30 10000 ID = 5 A VDS = 15 V 8 1000 6 1st line 2nd line 1000 2nd line VGS - Gate-to-Source Voltage (V) Ciss 3000 1st line 2nd line 2nd line C - Capacitance (pF) 4000 12 4 100 2 0 10 0 15 30 45 60 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S22-0224-Rev. B, 07-Mar-2022 80 10 10000 6 60 ID - Drain Current (A) 2nd line 5000 0 40 ID - Drain Current (A) 2nd line 75 Document Number: 75171 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA37EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 6 A 1000 1.2 VGS = 4.5 V 1.0 100 0.8 0.6 0 25 50 1000 1 TJ = 150 °C 100 0.1 TJ = 25 °C 0.01 10 -50 -25 10 1st line 2nd line 2nd line IS - Source Current (A) VGS = 10 V 1.4 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 1.6 10 75 100 125 150 175 0 0.2 0.5 0.7 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title 0.4 10000 0.1 2nd line VGS(th) Variance (V) 0.040 1000 0.030 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.050 0.020 100 TJ = 125 °C -0.2 ID =5 mA -0.5 -0.8 0.010 TJ = 25 °C ID = 250 μA 0.000 -1.1 10 0 2 4 6 8 -50 -25 10 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 2nd line VDS - Drain-to-Source Voltage (V) 40 ID = 1 mA 38 36 34 32 30 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain-Source Breakdown vs. Junction Temperature S22-0224-Rev. B, 07-Mar-2022 Document Number: 75171 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA37EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TC = 25 °C, unless otherwise noted) Axis Title 1000 10000 IDM limited 100 μs 1000 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 10 ms 100 ms, 1 s, 10 s, DC ID limited 1 Limited by RDS(on) (1) 100 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Normalized Effective Transient Thermal Impedance Safe Operating Area 1 Duty cycle = 0.5 Notes: 0.2 0.1 PDM 0.1 t1 0.05 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface mounted 0.02 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S22-0224-Rev. B, 07-Mar-2022 Document Number: 75171 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA37EP www.vishay.com Vishay Siliconix Normalized Effective Transient Thermal Impedance THERMAL RATINGS (TC = 25 °C, unless otherwise noted) 1 Duty cycle Cycle == 0.5 0.5 0.2 0.1 0.1 Single pulse Pulse 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75171. S22-0224-Rev. B, 07-Mar-2022 Document Number: 75171 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 W E1 E E2 W2 W3 W1 b2 D2 b b1 L1 L L1 A1 θ e D1 b3 b4 0.25 gauge line Backside view (single) D Topside view (single) b2 E1 E E2 W2 W3 W1 F K D3 D3 L1 D2 b b1 e b3 D1 b4 Backside view (dual) D C A Topside view (dual) Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Nov-2021 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 θ 2.96 0° - 0.117 10° 0° - 10° ECN: C21-1498-Rev. C, 01-Nov-2021 DWG: 6044 Note • Millimeters will govern Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Nov-2021 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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