SQJB04ELP-T1_GE3

SQJB04ELP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Dual • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D1 D2 6. 15 m m 3 4 S2 G2 m 1 3 .1 m 5 Top View 1 2 S1 G1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 D2 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V 0.0110 RDS(on) (Ω) at VGS = 4.5 V 0.0146 ID (A) per leg Configuration Package G1 40 G2 30 S1 Dual N-Channel MOSFET S2 N-Channel MOSFET PowerPAK SO-8L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 TC = 25 °C a Continuous drain current TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current L = 0.1 mH Single pulse avalanche energy TC = 25 °C Maximum power dissipation b TC = 125 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) ID 22 25 IDM 120 IAS 14 EAS 9.8 TJ, Tstg d, e V 30 IS PD UNIT 27 9 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 85 RthJC 5.5 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S20-0104-Rev. A, 02-Mar-2020 Document Number: 77326 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB04ELP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1.2 1.7 2.2 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 VGS = 10 V VDS ≥ 5 V 25 - - VGS = 10 V ID = 5 A - 0.0078 0.0110 VGS = 4.5 V ID = 3 A - 0.0113 0.0146 VGS = 10 V ID = 5 A, TJ = 125 °C - - 0.0150 VGS = 10 V ID = 5 A, TJ = 175 °C - - 0.0180 - 30 - - 751 1055 - 223 320 - 22 35 - 13.1 20 - 2.4 - - 2.1 - 1.65 3.33 5.10 - 9 15 - 5 10 - 19 30 - 5 10 VDS = 15 V, ID = 5 A V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VDS = 20 V, ID = 1.5 A f = 1 MHz tr td(off) VDD = 20 V, RL = 13.33 Ω ID ≅ 1.5 A, VGEN = 10 V, Rg = 1 Ω tf pF nC Ω ns b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery charge VGS = 10 V VDS = 25 V, f = 1 MHz td(on) Source-Drain Diode Ratings and Characteristics Body diode reverse recovery time VGS = 0 V IF = 5 A, VGS = 0 V trr Qrr IF = 3 A, di/dt = 100 A/μs - - 120 - 0.88 1.2 A V - 20 40 ns - 10 20 nC - 10 - ns Reverse recovery fall time ta Reverse recovery rise time tb - 10 - ns IRM(REC) - -0.85 - A Body diode peak reverse recovery current Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0104-Rev. A, 02-Mar-2020 Document Number: 77326 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB04ELP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 150 10000 10000 90 VGS = 10 V thru 6 V VGS = 5 V VGS = 4 V 60 100 VGS = 3 V 30 1000 54 1st line 2nd line 1000 90 2nd line ID - Drain Current (A) 72 1st line 2nd line 2nd line ID - Drain Current (A) 120 TC = 25 °C 36 100 18 TC = 125 °C TC = -55 °C 0 0 10 0 2 4 6 8 10 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 Axis Title 75 0.040 10000 TC = -55 °C 2nd line RDS(on) - On-Resistance (Ω) 60 45 TC = 125 °C 30 15 0.032 1000 0.024 1st line 2nd line TC = 25 °C 2nd line gfs - Transconductance (S) 10 0 VGS = 4.5 V 0.016 100 0.008 VGS = 10 V 0 0 10 20 30 40 0.000 50 10 0 ID - Drain Current (A) 15 Coss 100 100 Crss 10 10 24 32 40 10000 ID = 1.5 A VDS = 20 V 8 1000 6 1st line 2nd line 1000 2nd line VGS - Gate-to-Source Voltage (V) Ciss 1st line 2nd line 2nd line C - Capacitance (pF) 10 10000 16 4 100 2 0 10 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S20-0104-Rev. A, 02-Mar-2020 75 Axis Title Axis Title 8 60 On-Resistance vs. Drain Current 10 000 0 45 ID - Drain Current (A) Transconductance 1000 30 15 Document Number: 77326 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB04ELP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 10000 100 ID = 5 A 1000 1.4 VGS = 4.5 V 1.1 100 10 TJ = 150 °C 1 100 TJ = 25 °C 0.1 0.8 0.5 0.01 10 -50 -25 0 25 50 75 10 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.050 10000 0.5 10000 0.2 0.020 TJ = 150 °C 100 0.010 1000 -0.1 1st line 2nd line 1000 0.030 2nd line VGS(th) - Variance (V) 0.040 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1000 1st line 2nd line VGS = 10 V 2nd line IS - Source Current (A) 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 ID = 5 mA -0.4 100 ID = 250 μA -0.7 TJ = 25 °C 0.000 -1.0 10 0 2 4 6 8 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title Axis Title 54 10000 1000 10000 100 48 100 46 IDM limited ID limited 1 Limited by RDS(on) a 0.1 44 10 -50 -25 0 25 50 75 100 125 150 175 100 μs1000 10 0.01 0.01 BVDSS limited 1 ms 10 ms 100 ms, 1 s, 100 10 s, DC 1st line 2nd line 1000 50 2nd line ID - Drain Current (A) 52 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) ID = 1 mA TC = 25 °C, single pulse 10 0.1 1 10 TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) Drain Source Breakdown vs. Junction Temperature Safe Operating Area 100 Note a. VGS > minimum VGS at which RDS(on) is specified S20-0104-Rev. A, 02-Mar-2020 Document Number: 77326 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB04ELP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 85 °C/W 0.02 3. T JM - TA = P DM ZthJA(t) Single pulse 0.01 10-4 4. Surface mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 Duty cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77326. S20-0104-Rev. A, 02-Mar-2020 Document Number: 77326 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 W E1 E E2 W2 W3 W1 b2 D2 b b1 L1 L L1 A1 θ e D1 b3 b4 0.25 gauge line Backside view (single) D Topside view (single) b2 E3 E1 E E2 W2 W3 W1 F K D3 D3 L1 D2 b b1 e b3 D1 b4 Backside view (dual) D C A Topside view (dual) Revision: 25-Sep-2023 Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 E3 6.05 6.22 6.40 0.238 0.245 0.252 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117  0° - 10° 0° - 10° ECN: C23-1026-Rev. D, 25-Sep-2023 DWG: 6044 Note • Millimeters will govern Revision: 25-Sep-2023 Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL 6.7500 (0.266) 5.1300 (0.202) 0.4100 (0.016) 0, 0 1.7300 (0.068) 0.5000 (0.020) 1.9800 (0.078) 0.9150 (0.036) 0.5850 (0.023) 0.7200 (0.028) 2.1100 (0.083) 3.0750 (0.121) 7.7500 (0.305) 0.5100 (0.020) 0.2550 (0.010) 6.1500 (0.242) 3.9900 (0.157) 2.5650 (0.101) 0.4700 (0.019) 1.2700 (0.050) 0.4100 (0.016) Recommended Minimum Pads Dimensions in mm (inches) Keep-out 6.75 (0.266) x 7.75 (0.305) Revision: 07-Feb-12 1 Document Number: 63817 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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