SQJB40EP-T1_GE3

SQJB40EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Dual • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D1 D2 6. 15 m m 1 13 5. 3 4 S2 G2 m m Top View 1 2 S1 G1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 D2 Bottom View PRODUCT SUMMARY VDS (V) G1 40 RDS(on) (Ω) at VGS = 10 V 0.008 RDS(on) (Ω) at VGS = 4.5 V 0.011 G2 ID (A) per leg 30 S1 Configuration Dual N-Channel MOSFET S2 N-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and halogen-free SQJB40EP (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 30 IS 30 80 IAS 22 EAS 24 TJ, Tstg Soldering recommendations (peak temperature) d V 29 IDM PD UNIT 34 11 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction to ambient Junction to case (drain) PCB mount c SYMBOL LIMIT RthJA 85 RthJC 4.3 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S22-0060-Rev. C, 24-Jan-2022 Document Number: 68550 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB40EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1.2 1.8 2.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 250 VGS = 10 V VDS ≥ 5 V 20 - - VGS = 10 V ID = 8 A - 0.0063 0.0080 VGS = 10 V ID = 8 A, TJ = 125 °C - - 0.0117 VGS = 10 V ID = 8 A, TJ = 175 °C - - 0.0138 VGS = 4.5 V ID = 5 A - 0.0083 0.0110 - 48 - VDS = 15 V, ID = 8 A V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 5 A f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics ISM Forward voltage VSD trr 1415 1900 935 1300 - 45 65 - 20 35 - 4.3 - - 2.5 - 0.30 0.74 1.20 - 7 15 - 20 35 - 18 35 - 15 25 IF = 8 A, VGS = 0 V nC Ω ns - - 80 - 0.803 1.200 V - 50 100 ns - 60 120 nC - 27 - Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - 23 - IRM(REC) - -2.3 - Body diode peak reverse recoverycurrent pF b Pulsed current a Body diode reverse recovery time - IF = 8 A, di/dt = 100 A/μs A ns A Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0060-Rev. C, 24-Jan-2022 Document Number: 68550 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB40EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 80 60 10000 10000 VGS = 10 V thru 4 V 32 100 16 6 8 100 TC = -55 °C 0 10 4 24 TC = 125 °C 0 2 TC = 25 °C 12 VGS = 3 V 0 1000 36 1st line 2nd line 1000 48 2nd line ID - Drain Current (A) 48 1st line 2nd line 2nd line ID - Drain Current (A) 64 10 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 5 Axis Title Axis Title 10 100 10000 10000 6 TC = 25 °C 4 100 2 1000 60 TC = 125 °C 40 100 20 0 10 1 TC = 25 °C TC = -55 °C TC = 125 °C 0 0 80 2 3 4 5 10 0 4 8 12 16 VGS - Gate-to-Source Voltage (V) 2nd line ID - Drain Current (A) 2nd line Transfer Characteristics Transconductance Axis Title 20 Axis Title 0.025 3000 10000 0.020 10000 VGS = 4.5 V 0.010 100 0.005 1000 1800 1st line 2nd line 1000 0.015 2nd line C - Capacitance (pF) 2400 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line 1000 1st line 2nd line 2nd line ID - Drain Current (A) 8 2nd line gfs - Transconductance (S) TC = -55 °C Ciss 1200 Coss 100 600 VGS = 10 V Crss 0 10 0 16 32 48 64 80 0 10 0 8 16 24 32 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance S22-0060-Rev. C, 24-Jan-2022 40 Document Number: 68550 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB40EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 2.0 1000 6 4 100 2 0 5 10 15 20 VGS = 10 V 1.7 1000 1.4 VGS = 4.5 V 1.1 100 0.8 0.5 10 0 10000 ID = 8A 10 -50 -25 25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature Axis Title Axis Title 0.05 10 TJ = 150 °C 1000 1st line 2nd line 1 0.1 TJ = 25 °C 100 0.01 2nd line RDS(on) - On-Resistance (Ω) 10000 10000 0.04 1000 0.03 1st line 2nd line 100 2nd line IS - Source Current (A) 1st line 2nd line ID = 5 A VDS = 20 V 8 2nd line RDS(on) - On-Resistance (Normalized) 10000 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 10 0.02 100 TJ = 150 °C 0.01 TJ = 25 °C 0.001 0 10 0 0.2 0.4 0.6 0.8 1.0 10 1.2 0 2 4 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 55 0.2 1000 1st line 2nd line -0.1 ID = 5 mA -0.4 100 -0.7 ID = 250 μA -1.0 10 -50 -25 0 25 50 75 100 125 150 175 2nd line VDS - Drain-to-Source Voltage (V) 10000 10000 ID = 1 mA 52 1000 49 1st line 2nd line 0.5 2nd line VGS(th) Variance (V) 6 46 100 43 40 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) 2nd line TJ - Junction Temperature (°C) 2nd line Threshold Voltage Drain Source Breakdown vs. Junction Temperature S22-0060-Rev. C, 24-Jan-2022 Document Number: 68550 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB40EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 100 μs IDM Limited ID - Drain Current (A) 10 ID Limited 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on)* 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S22-0060-Rev. C, 24-Jan-2022 Document Number: 68550 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB40EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68550. S22-0060-Rev. C, 24-Jan-2022 Document Number: 68550 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 W E1 E E2 W2 W3 W1 b2 D2 b b1 L1 L L1 A1 θ e D1 b3 b4 0.25 gauge line Backside view (single) D Topside view (single) b2 E1 E E2 W2 W3 W1 F K D3 D3 L1 D2 b b1 e b3 D1 b4 Backside view (dual) D C A Topside view (dual) Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Nov-2021 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 θ 2.96 0° - 0.117 10° 0° - 10° ECN: C21-1498-Rev. C, 01-Nov-2021 DWG: 6044 Note • Millimeters will govern Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Nov-2021 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL 6.7500 (0.266) 5.1300 (0.202) 0.4100 (0.016) 0, 0 1.7300 (0.068) 0.5000 (0.020) 1.9800 (0.078) 0.9150 (0.036) 0.5850 (0.023) 0.7200 (0.028) 2.1100 (0.083) 3.0750 (0.121) 7.7500 (0.305) 0.5100 (0.020) 0.2550 (0.010) 6.1500 (0.242) 3.9900 (0.157) 2.5650 (0.101) 0.4700 (0.019) 1.2700 (0.050) 0.4100 (0.016) Recommended Minimum Pads Dimensions in mm (inches) Keep-out 6.75 (0.266) x 7.75 (0.305) Revision: 07-Feb-12 1 Document Number: 63817 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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