SQJB42EP
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Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L Dual
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D1
D2
6.
15
m
m
13
5.
1
3
4 S2
G2
m
m
Top View
1
2 S1
G1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1
D2
Bottom View
PRODUCT SUMMARY
VDS (V)
G1
40
RDS(on) () at VGS = 10 V
0.0095
ID (A) per leg
30
Configuration
Dual
Package
G2
S1
S2
N-Channel MOSFET
N-Channel MOSFET
PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
40
Gate-source voltage
VGS
± 20
Continuous drain current a
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current
b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
30
30
IDM
120
IAS
25
EAS
31
TJ, Tstg
Soldering recommendations (peak temperature) d, e
V
30
IS
PD
UNIT
48
16
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
LIMIT
RthJA
85
RthJC
3.1
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-2457-Rev. A, 05-Dec-16
Document Number: 75345
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SQJB42EP
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0 V, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3.0
3.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
-
-
50
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = 40 V, TJ = 125 °C
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
150
On-state drain current a
ID(on)
VGS = 10 V
VDS 5 V
25
-
-
VGS = 10 V
ID = 10 A
-
0.0079
0.0095
VGS = 10 V
ID = 10 A, TJ = 125 °C
-
-
0.0134
VGS = 10 V
ID = 10 A, TJ = 175 °C
-
-
0.0160
-
37
-
-
1080
1500
Drain-source on-state resistance
a
Forward transconductance b
RDS(on)
gfs
VDS = 15 V, ID = 10 A
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
VGS = 0 V
Output capacitance
Coss
-
780
1100
Reverse transfer capacitance
Crss
-
30
45
Total gate charge c
Qg
-
17
30
-
5
-
-
3
-
0.3
0.64
1
-
13
25
-
4
10
-
21
40
-
18
30
-
-
120
A
-
0.83
1.2
V
Gate-source charge
c
Gate-drain charge c
Gate resistance
Rise time c
Fall time c
VDS = 20 V, ID = 2 A
f = 1 MHz
td(on)
tr
c
VGS = 10 V
Qgd
Rg
Turn-on delay time c
Turn-off delay time
Qgs
VDS = 25 V, f = 1 MHz
td(off)
VDD = 20 V, RL = 10
ID 2 A, VGEN = 10 V, Rg = 1
tf
Source-Drain Diode Ratings and Characteristics
pF
nC
ns
b
Pulsed current a
ISM
Forward voltage
VSD
IF = 10 A, VGS = 0 V
Body diode reverse recovery time
trr
-
44
90
ns
Body diode reverse recovery charge
Qrr
-
47
100
nC
Reverse recovery fall time
ta
-
23
-
Reverse recovery rise time
tb
-
23
-
IRM(REC)
-
-2
-4
Body diode peak reverse recovery current
IF = 5 A, di/dt = 100 A/μs
ns
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2457-Rev. A, 05-Dec-16
Document Number: 75345
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJB42EP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
VGS = 10 V thru 6 V
VGS = 5 V
40
100
20
1000
48
1st line
2nd line
1st line
2nd line
1000
60
10000
64
2nd line
ID - Drain Current (A)
80
2nd line
ID - Drain Current (A)
80
10000
TC = 25 °C
32
100
16
VGS = 4 V
TC = 125 °C
0
0
2
4
6
8
TC = -55 °C
0
10
10
10
0
2
4
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
100
15
0
15
20
1000
0.018
0.012
VGS = 10 V
0.006
25
10
0
16
ID - Drain Current (A)
2nd line
Axis Title
Coss
100
500
Crss
0
10
32
40
10000
ID = 2 A
VDS = 20 V
8
1000
6
1st line
2nd line
Ciss
2nd line
VGS - Gate-to-Source Voltage (V)
1st line
2nd line
2nd line
C - Capacitance (pF)
1000
1500
4
100
2
0
10
0
4
8
12
16
VDS - Drain-to-Source Voltage (V)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S16-2457-Rev. A, 05-Dec-16
80
Axis Title
2000
24
64
10
10000
16
48
On-Resistance vs. Drain Current
2500
8
32
ID - Drain Current (A)
2nd line
Transconductance
1000
100
0.000
10
10
0.024
1st line
2nd line
TC = 125 °C
30
2nd line
RDS(on) - On-Resistance (Ω)
1st line
2nd line
2nd line
gfs - Transconductance (S)
1000
45
5
10000
TC = -55 °C
TC = 25 °C
60
10
0.030
10000
0
8
VDS - Drain-to-Source Voltage (V)
2nd line
75
0
6
20
Document Number: 75345
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SQJB42EP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
ID = 5 A
10
VGS = 10 V
2nd line
IS - Source Current (A)
1.7
1000
1.4
1.1
100
0.8
0.5
0
25
50
TJ = 150 °C
1000
1
TJ = 25 °C
0.1
100
0.01
0.001
10
-50 -25
10000
75 100 125 150 175
10
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
0.075
0.5
10000
10000
0.1
1000
0.045
0.030
100
TJ = 150 °C
0.015
1000
-0.3
1st line
2nd line
2nd line
VGS(th) Variance (V)
0.060
1st line
RDS(on) - On-Resistance (Ω)
1st line
2nd line
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
ID = 5 mA
-0.7
100
ID = 250 μA
-1.1
TJ = 25 °C
0.000
-1.5
10
0
2
4
6
8
10
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
10000
ID = 1 mA
50
1000
49
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
51
48
100
47
46
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S16-2457-Rev. A, 05-Dec-16
Document Number: 75345
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJB42EP
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1000
10000
IDM limited
100 μs
1000
10
1 ms
ID limited
10 ms
100 ms, 1 s, 10 s, DC
1
1st line
2nd line
2nd line
ID - Drain Current (A)
100
100
Limited by RDS(on) (1)
0.1
TC = 25 °C
Single pulse
0.01
0.01
(1)
0.1
BVDSS limited
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
2
1
Duty cycle = 0.5
0.2
Notes:
0.1
P DM
0.1
0.05
t1
t2
t1
1. Duty cycle, D =
t2
2. Per unit base = R thJA = 85 °C/W
0.02
3. TJM - TA = P DM ZthJA(t)
Single pulse
4. Surface mounted
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S16-2457-Rev. A, 05-Dec-16
Document Number: 75345
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJB42EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1
Duty cycle = 0.5
1000
0.2
0.1
1st line
Normalized Effective Transient
Thermal Impedance
10000
0.1
100
0.05
0.02
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75345.
S16-2457-Rev. A, 05-Dec-16
Document Number: 75345
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 2
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L1
L
L1
A1
θ
e
D1
b3
b4
0.25 gauge line
Backside view (single)
D
Topside view (single)
b2
E1
E
E2
W2
W3
W1
F
K
D3
D3
L1
D2
b
b1
e
b3
D1
b4
Backside view (dual)
D
C
A
Topside view (dual)
Document Number: 66934
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Revision: 01-Nov-2021
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
2.75
2.85
2.95
0.108
0.112
0.116
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
θ
2.96
0°
-
0.117
10°
0°
-
10°
ECN: C21-1498-Rev. C, 01-Nov-2021
DWG: 6044
Note
• Millimeters will govern
Document Number: 66934
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Revision: 01-Nov-2021
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL
6.7500
(0.266)
5.1300
(0.202)
0.4100
(0.016)
0, 0
1.7300
(0.068)
0.5000
(0.020)
1.9800
(0.078)
0.9150
(0.036)
0.5850
(0.023)
0.7200
(0.028)
2.1100
(0.083)
3.0750
(0.121)
7.7500
(0.305)
0.5100
(0.020)
0.2550
(0.010)
6.1500
(0.242)
3.9900
(0.157)
2.5650
(0.101)
0.4700
(0.019)
1.2700
(0.050)
0.4100
(0.016)
Recommended Minimum Pads
Dimensions in mm (inches)
Keep-out 6.75 (0.266) x 7.75 (0.305)
Revision: 07-Feb-12
1
Document Number: 63817
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2022
1
Document Number: 91000