SQJB44EP-T1_GE3

SQJB44EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Dual • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D2 6. 15 m m 1 13 5. 3 4 S2 G2 m m Top View 1 2 S1 G1 D1 PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V 0.0052 0.0070 Configuration Package G1 40 RDS(on) (Ω) at VGS = 4.5 V ID (A) per leg D2 Bottom View G2 S1 30 S2 N-Channel MOSFET N-Channel MOSFET Dual PowerPAK SO-8L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current a TC = 25 °C TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 30 IS 30 120 IAS 25 EAS 31 TJ, Tstg Soldering recommendations (peak temperature) d, e V 30 IDM PD UNIT 48 16 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) SYMBOL PCB mount c LIMIT RthJA 85 RthJC 3.1 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S20-0105-Rev. A, 02-Mar-2020 Document Number: 77323 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB44EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1.2 1.7 2.2 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 Zero gate voltage drain current IDSS Gate-source threshold voltage On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance b RDS(on) gfs VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 VGS = 10 V VDS ≥ 5 V 30 - - VGS = 10 V ID = 8 A - 0.0041 0.0052 VGS = 10 V ID = 8 A, TJ = 125 °C - - 0.0080 VGS = 10 V ID = 8 A, TJ = 175 °C - - 0.0097 VGS = 4.5 V ID = 5 A - 0.0055 0.0070 - 35 - - 2050 3075 VDS = 15 V, ID = 8 A V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Rg Turn-on delay time c Rise time c Turn-off delay time Fall time c VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 3 A f = 1 MHz td(on) tr c VGS = 0 V td(off) VDD = 20 V, RL = 6.67 Ω ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics - 502 755 - 30 45 pF - 33.5 50 - 5.7 - - 5.5 - 0.77 1.55 2.33 - 11 25 - 4 10 - 27 50 - 8 15 - - 120 A - 0.78 1.2 V nC Ω ns b Pulsed current a ISM Forward voltage VSD IF = 8 A, VGS = 0 V Body diode reverse recovery time trr - 31 65 ns Body diode reverse recovery charge Qrr - 21 45 nC Reverse recovery fall time ta - 15 - Reverse recovery rise time tb - 16 - IRM(REC) - -1.18 - Body diode peak reverse recovery current IF = 6 A, di/dt = 100 A/μs ns A Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0105-Rev. A, 02-Mar-2020 Document Number: 77323 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB44EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 225 10000 160 10000 VGS = 10 V thru 5 V 90 100 45 1000 96 1st line 2nd line 1000 VGS = 4 V 135 2nd line ID - Drain Current (A) 128 1st line 2nd line 2nd line ID - Drain Current (A) 180 TC= 25 °C 64 100 TC= 125 °C 32 VGS = 3 V TC= -55 °C 0 0 10 0 2 4 6 8 10 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 Axis Title 150 0.020 10000 TC = -55 °C 90 2nd line RDS(on) - On-Resistance (Ω) 120 TC = 125 °C 60 30 0.016 1000 0.012 1st line 2nd line TC = 25 °C 2nd line gfs - Transconductance (S) 10 0 0.008 VGS = 4.5 V 100 0.004 VGS = 10 V 0 0 12 24 36 48 0.000 60 10 0 ID - Drain Current (A) 15 10 100 100 Crss 10 10 24 32 VDS - Drain-to-Source Voltage (V) Capacitance S20-0105-Rev. A, 02-Mar-2020 40 10000 ID = 3 A VDS = 20 V 8 1000 6 1st line 2nd line 1000 Coss 1st line 2nd line 2nd line C - Capacitance (pF) Ciss 2nd line VGS - Gate-to-Source Voltage (V) 10000 16 75 Axis Title Axis Title 8 60 On-Resistance vs. Drain Current 10 000 0 45 ID - Drain Current (A) Transconductance 1000 30 4 100 2 0 10 0 8 16 24 32 40 Qg - Total Gate Charge (nC) Gate Charge Document Number: 77323 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB44EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 10000 100 ID = 8 A VGS = 10 V 1.4 VGS = 4.5 V 1.1 100 10 TJ = 150 °C 1 100 TJ = 25 °C 0.1 0.8 0.5 0.01 10 -50 -25 0 25 50 75 10 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.030 10000 0.5 10000 0.2 0.012 100 TJ = 150 °C 0.006 1000 -0.1 1st line 2nd line 1000 0.018 2nd line VGS(th) - Variance (V) 0.024 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1000 1st line 2nd line 1000 2nd line IS - Source Current (A) 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 ID = 5 mA -0.4 100 ID = 250 μA -0.7 TJ = 25 °C 0.000 -1.0 10 0 2 4 6 8 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title Axis Title 52 10000 1000 10000 100 48 46 100 44 10 -50 -25 0 25 50 75 100 125 150 175 1000 10 1 ms ID limited 1 10 ms 100 ms, 1 s, 10 s, DC 100 Limited by RDS(on) a BVDSS limited 0.1 42 100 μs IDM limited 1st line 2nd line 1000 2nd line ID - Drain Current (A) 50 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) ID = 1 mA 0.01 0.01 TC = 25 °C, single pulse 10 0.1 1 10 TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) Drain Source Breakdown vs. Junction Temperature Safe Operating Area 100 Note a. VGS > minimum VGS at which RDS(on) is specified S20-0105-Rev. A, 02-Mar-2020 Document Number: 77323 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB44EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 t1 1. Duty cycle, D = t2 2. Per unit base = R thJA = 85 °C/W 0.02 3. TJM - TA = P DM ZthJA(t) 4. Surface mounted Single pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 Duty cycle = 0.5 1000 0.2 0.1 1st line Normalized Effective Transient Thermal Impedance 10000 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77323. S20-0105-Rev. A, 02-Mar-2020 Document Number: 77323 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 W E1 E E2 W2 W3 W1 b2 D2 b b1 L1 L L1 A1 θ e D1 b3 b4 0.25 gauge line Backside view (single) D Topside view (single) b2 E3 E1 E E2 W2 W3 W1 F K D3 D3 L1 D2 b b1 e b3 D1 b4 Backside view (dual) D C A Topside view (dual) Revision: 25-Sep-2023 Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 E3 6.05 6.22 6.40 0.238 0.245 0.252 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117  0° - 10° 0° - 10° ECN: C23-1026-Rev. D, 25-Sep-2023 DWG: 6044 Note • Millimeters will govern Revision: 25-Sep-2023 Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL 6.7500 (0.266) 5.1300 (0.202) 0.4100 (0.016) 0, 0 1.7300 (0.068) 0.5000 (0.020) 1.9800 (0.078) 0.9150 (0.036) 0.5850 (0.023) 0.7200 (0.028) 2.1100 (0.083) 3.0750 (0.121) 7.7500 (0.305) 0.5100 (0.020) 0.2550 (0.010) 6.1500 (0.242) 3.9900 (0.157) 2.5650 (0.101) 0.4700 (0.019) 1.2700 (0.050) 0.4100 (0.016) Recommended Minimum Pads Dimensions in mm (inches) Keep-out 6.75 (0.266) x 7.75 (0.305) Revision: 07-Feb-12 1 Document Number: 63817 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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