SQJB48EP
www.vishay.com
Vishay Siliconix
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L Dual
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D1
D2
6.
15
m
m
13
5.
1
3
4 S2
G2
m
m
Top View
1
2 S1
G1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1
D2
Bottom View
PRODUCT SUMMARY
VDS (V)
G1
40
RDS(on) () at VGS = 10 V
0.0052
ID (A) per leg
30
Configuration
Dual
Package
G2
S1
S2
N-Channel MOSFET
N-Channel MOSFET
PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
40
Gate-source voltage
VGS
± 20
Continuous drain current a
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current
b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
30
30
IDM
120
IAS
25
EAS
31
TJ, Tstg
Soldering recommendations (peak temperature) d, e
V
30
IS
PD
UNIT
48
16
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
LIMIT
RthJA
85
RthJC
3.1
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S19-1032-Rev. A, 09-Dec-2019
Document Number: 77347
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SQJB48EP
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0 V, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.3
2.8
3.3
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
-
-
50
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = 40 V, TJ = 125 °C
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
150
On-state drain current a
ID(on)
VGS = 10 V
VDS 5 V
30
-
-
VGS = 10 V
ID = 8 A
-
0.0041
0.0052
VGS = 10 V
ID = 8 A, TJ = 125 °C
-
-
0.0074
VGS = 10 V
ID = 8 A, TJ = 175 °C
-
-
0.0087
-
37
-
-
1666
2350
Drain-source on-state resistance
a
Forward transconductance b
RDS(on)
gfs
VDS = 15 V, ID = 8 A
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
VGS = 0 V
Output capacitance
Coss
-
534
750
Reverse transfer capacitance
Crss
-
29
40
Total gate charge c
Qg
-
25.3
40
-
7.3
-
-
5.1
-
0.9
1.84
2.77
-
13
25
-
5
10
-
22
40
-
8
15
-
-
120
A
-
0.79
1.2
V
Gate-source charge
c
Gate-drain charge c
Gate resistance
Rise time c
Fall time c
VDS = 20 V, ID = 3 A
f = 1 MHz
td(on)
tr
c
VGS = 10 V
Qgd
Rg
Turn-on delay time c
Turn-off delay time
Qgs
VDS = 25 V, f = 1 MHz
td(off)
VDD = 20 V, RL = 6.67
ID 3 A, VGEN = 10 V, Rg = 1
tf
Source-Drain Diode Ratings and Characteristics
pF
nC
ns
b
Pulsed current a
ISM
Forward voltage
VSD
IF = 8 A, VGS = 0 V
Body diode reverse recovery time
trr
-
32
65
ns
Body diode reverse recovery charge
Qrr
-
22
45
nC
Reverse recovery fall time
ta
-
16
-
Reverse recovery rise time
tb
-
16
-
IRM(REC)
-
-1.18
-
Body diode peak reverse recovery current
IF = 6 A, di/dt = 100 A/μs
ns
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S19-1032-Rev. A, 09-Dec-2019
Document Number: 77347
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJB48EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
225
125
10000
10000
VGS = 10 V thru 7 V
VGS = 6 V
VGS = 5 V
90
100
45
1000
75
1st line
2nd line
1000
135
2nd line
ID - Drain Current (A)
100
1st line
2nd line
2nd line
ID - Drain Current (A)
180
TC = 25 °C
50
100
25
TC = 125 °C
TC = -55 °C
VGS = 4 V
0
0
10
0
2
4
6
8
10
10
0
VDS - Drain-to-Source Voltage (V)
4
8
10
Transfer Characteristics
Axis Title
120
0.020
TC = 125 °C
60
30
0
12
24
36
48
0.016
1000
0.012
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
90
0
10000
TC = -55 °C
TC = 25 °C
0.008
100
VGS = 10 V
0.004
0.000
60
10
0
ID - Drain Current (A)
15
30
Axis Title
Axis Title
1st line
2nd line
100
100
Crss
10
10
16
24
32
VDS - Drain-to-Source Voltage (V)
Capacitance
S19-1032-Rev. A, 09-Dec-2019
40
10000
ID = 3 A
VDS = 20 V
8
1000
6
1st line
2nd line
1000
Coss
2nd line
VGS - Gate-to-Source Voltage (V)
Ciss
8
75
10
10000
0
60
On-Resistance vs. Drain Current
10 000
1000
45
ID - Drain Current (A)
Transconductance
2nd line
C - Capacitance (pF)
6
VGS - Gate-to-Source Voltage (V)
Output Characteristics
2nd line
gfs - Transconductance (S)
2
4
100
2
0
10
0
6
12
18
24
30
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 77347
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SQJB48EP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
10000
ID = 8 A
1000
1st line
2nd line
1.4
VGS = 10 V
1.1
100
10
TJ = 150 °C
1000
1st line
2nd line
1.7
2nd line
IS - Source Current (A)
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
1
TJ = 25 °C
100
0.1
0.8
0.5
0.01
10
-50 -25
0
25
50
75
10
0
100 125 150 175
0.3
TJ - Junction Temperature (°C)
0.6
1.2
1.5
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
0.030
10000
0.5
0.024
10000
1000
0.018
0.012
100
TJ = 150 °C
0.006
1000
-0.1
1st line
2nd line
2nd line
VGS(th) - Variance (V)
0.2
1st line
2nd line
RDS(on) - On-Resistance (Ω)
0.9
ID = 5 mA
-0.4
100
-0.7
ID = 250 μA
TJ = 25 °C
0.000
10
0
2
4
6
8
-1.0
10
10
-50 -25
VGS - Gate-to-Source Voltage (V)
0
25
50
75
100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
50
10000
ID = 1 mA
1000
48
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
52
46
100
44
42
10
-50 -25
0
25
50
75
100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S19-1032-Rev. A, 09-Dec-2019
Document Number: 77347
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJB48EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1000
10000
100 μs
IDM limited
1000
10
1 ms
10 ms
ID limited
1
1st line
2nd line
2nd line
ID - Drain Current (A)
100
100 ms, 1 s, 10 s, DC
Limited by RDS(on) a
100
BVDSS limited
0.1
TC = 25 °C,
single pulse
0.01
0.01
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
Normalized Effective Transient
Thermal Impedance
2
1
Duty cycle = 0.5
0.2
Notes:
0.1
P DM
0.1
0.05
t1
t2
t1
1. Duty cycle, D =
t2
2. Per unit base = R thJA = 85 °C/W
0.02
3. TJM - TA = P DM ZthJA(t)
Single pulse
4. Surface mounted
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S19-1032-Rev. A, 09-Dec-2019
Document Number: 77347
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJB48EP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1
Duty cycle = 0.5
1000
0.2
0.1
1st line
Normalized Effective Transient
Thermal Impedance
10000
0.1
100
0.05
0.02
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75345.
S19-1032-Rev. A, 09-Dec-2019
Document Number: 77347
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 2
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L1
L
L1
A1
θ
e
D1
b3
b4
0.25 gauge line
Backside view (single)
D
Topside view (single)
b2
E3
E1
E
E2
W2
W3
W1
F
K
D3
D3
L1
D2
b
b1
e
b3
D1
b4
Backside view (dual)
D
C
A
Topside view (dual)
Revision: 25-Sep-2023
Document Number: 66934
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
2.75
2.85
2.95
0.108
0.112
0.116
E3
6.05
6.22
6.40
0.238
0.245
0.252
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
2.96
0.117
0°
-
10°
0°
-
10°
ECN: C23-1026-Rev. D, 25-Sep-2023
DWG: 6044
Note
• Millimeters will govern
Revision: 25-Sep-2023
Document Number: 66934
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PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL
6.7500
(0.266)
5.1300
(0.202)
0.4100
(0.016)
0, 0
1.7300
(0.068)
0.5000
(0.020)
1.9800
(0.078)
0.9150
(0.036)
0.5850
(0.023)
0.7200
(0.028)
2.1100
(0.083)
3.0750
(0.121)
7.7500
(0.305)
0.5100
(0.020)
0.2550
(0.010)
6.1500
(0.242)
3.9900
(0.157)
2.5650
(0.101)
0.4700
(0.019)
1.2700
(0.050)
0.4100
(0.016)
Recommended Minimum Pads
Dimensions in mm (inches)
Keep-out 6.75 (0.266) x 7.75 (0.305)
Revision: 07-Feb-12
1
Document Number: 63817
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Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2023
1
Document Number: 91000