SQJB70EP-T1_BE3

SQJB70EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Dual • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D1 D2 6. 15 m m 3 4 S2 G2 m 1 3 .1 m 5 Top View 1 2 S1 G1 D1 D2 Bottom View PRODUCT SUMMARY VDS (V) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 G1 G2 100 RDS(on) () at VGS = 10 V 0.095 ID (A) per leg 11.3 Configuration Dual S1 S2 N-Channel MOSFET N-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and halogen-free SQJB70EP (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 100 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 6.5 15 IDM 18 IAS 10 PD TJ, Tstg Soldering recommendations (peak temperature) d, e V 11.3 IS EAS UNIT 5 27 9 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 85 RthJC 5.5 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S22-0380-Rev. C, 02-May-2022 Document Number: 75213 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB70EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage IGSS Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b - - ± 100 VGS = 0 V VDS = 100 V - - 1 VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 100 V, TJ = 175 °C - - 150 ID(on) VGS = 10 V VDS  5 V 5 - - VGS = 10 V ID = 4 A - 0.078 0.095 RDS(on) VGS = 10 V ID = 4 A, TJ = 125 °C - - 0.168 VGS = 10 V ID = 4 A, TJ = 175 °C - - 0.213 - 6.5 - - 165 220 - 120 160 - 12 16 IDSS gfs VDS = 15 V, ID = 4 A V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Gate-source charge c Gate-drain charge c Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c VGS = 10 V VDS = 50 V, ID = 3 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = 50 V, RL = 33.3  ID  1.5 A, VGEN = 10 V, Rg = 1  tf pF - 4 7 - 1 - - 1.25 - 2.4 4.9 7.5 - 9 15 - 5 10 - 13 25 - 5 10 - - 18 A - 0.89 1.2 V nC  ns b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time VDS = 25 V, f = 1 MHz Qg Qgs Source-Drain Diode Ratings and Characteristics Body diode reverse recovery charge VGS = 0 V IF = 4 A, VGS = 0 V trr - 29 60 ns Qrr - 25 50 nC IF = 3 A, di/dt = 100 A/μs Reverse recovery fall time ta - 20 - ns Reverse recovery rise time tb - 9 - ns IRM(REC) - -1.7 - A Body diode peak reverse recovery current Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  S22-0380-Rev. C, 02-May-2022 Document Number: 75213 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB70EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 20 15 10000 10000 VGS = 10 V thru 7 V 12 8 VGS = 5 V 100 1000 9 1st line 2nd line 1000 12 2nd line ID - Drain Current (A) VGS = 6 V 1st line 2nd line 6 TC = 25 °C 3 4 VGS = 4 V TC = 125 °C 0 2 4 6 8 10 10 0 2 8 Output Characteristics Transfer Characteristics Axis Title TC = -55 °C 1000 9 6 100 TC = 125 °C 3 0 2nd line RDS(on) - On-Resistance (Ω) 12 TC = 25 °C 4 6 8 10000 0.20 1000 0.15 VGS = 10 V 0.10 100 0.05 0 10 2 10 10 0 3 6 9 12 ID - Drain Current (A) 2nd line ID - Drain Current (A) 2nd line Transconductance On-Resistance vs. Drain Current Axis Title 10 1000 1st line 2nd line 240 Ciss 160 100 Coss 80 Crss 0 10 60 80 100 10000 ID = 3 A VDS = 50 V 8 1000 6 1st line 2nd line 320 2nd line VGS - Gate-to-Source Voltage (V) 10000 40 4 100 2 0 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S22-0380-Rev. C, 02-May-2022 15 Axis Title 400 20 10 0.25 10000 1st line 2nd line 2nd line gfs - Transconductance (S) 6 VGS - Gate-to-Source Voltage (V) 2nd line Axis Title 0 4 VDS - Drain-to-Source Voltage (V) 2nd line 15 0 TC = -55 °C 0 10 0 2nd line C - Capacitance (pF) 100 1st line 2nd line 2nd line ID - Drain Current (A) 16 5 Document Number: 75213 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB70EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 VGS = 10 V ID = 4 A 10 1000 1.7 1.3 100 0.9 0.5 0 25 50 1000 1 0.1 0.01 10 0 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.5 0.5 10000 0.4 10000 1000 0.3 0.2 TJ = 150 °C 100 0.1 ID = 5 mA -0.3 1000 1st line 2nd line 2nd line VGS(th) Variance (V) 0.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 100 TJ = 25 °C 0.001 10 -50 -25 TJ = 150 °C 1st line 2nd line 2nd line IS - Source Current (A) 2.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.5 -0.7 100 ID = 250 μA -1.1 TJ = 25 °C 0 -1.5 10 0 2 4 6 8 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 121 10000 ID = 1 mA 1000 117 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 125 113 100 109 105 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature S22-0380-Rev. C, 02-May-2022 Document Number: 75213 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB70EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 10000 IDM limited 10 100 μs 1000 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 1 10 ms 100 ms, 1 s,100 10 s, DC Limited by RDS(on) (1) 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S22-0380-Rev. C, 02-May-2022 Document Number: 75213 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJB70EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1 Duty Cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions                                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75213. S22-0380-Rev. C, 02-May-2022 Document Number: 75213 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 W E1 E E2 W2 W3 W1 b2 D2 b b1 L1 L L1 A1 θ e D1 b3 b4 0.25 gauge line Backside view (single) D Topside view (single) b2 E3 E1 E E2 W2 W3 W1 F K D3 D3 L1 D2 b b1 e b3 D1 b4 Backside view (dual) D C A Topside view (dual) Revision: 25-Sep-2023 Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 E3 6.05 6.22 6.40 0.238 0.245 0.252 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 2.96 0.117  0° - 10° 0° - 10° ECN: C23-1026-Rev. D, 25-Sep-2023 DWG: 6044 Note • Millimeters will govern Revision: 25-Sep-2023 Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL 6.7500 (0.266) 5.1300 (0.202) 0.4100 (0.016) 0, 0 1.7300 (0.068) 0.5000 (0.020) 1.9800 (0.078) 0.9150 (0.036) 0.5850 (0.023) 0.7200 (0.028) 2.1100 (0.083) 3.0750 (0.121) 7.7500 (0.305) 0.5100 (0.020) 0.2550 (0.010) 6.1500 (0.242) 3.9900 (0.157) 2.5650 (0.101) 0.4700 (0.019) 1.2700 (0.050) 0.4100 (0.016) Recommended Minimum Pads Dimensions in mm (inches) Keep-out 6.75 (0.266) x 7.75 (0.305) Revision: 07-Feb-12 1 Document Number: 63817 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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