SQJQ100E-T1_GE3

SQJQ100E-T1_GE3

  • 厂商:

    TFUNK(威世)

  • 封装:

    PowerTDFN8

  • 描述:

  • 数据手册
  • 价格&库存
SQJQ100E-T1_GE3 数据手册
SQJQ100E www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® 8 x 8L Single • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D • Thin 1.9 mm height 8 m m 1 m 1m 8. Top View 4 S 3 S 2 S 1 G • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View PRODUCT SUMMARY VDS (V) 40 RDS(on) () at VGS = 10 V ID (A) 200 Configuration Package G 0.0015 N-Channel MOSFET Single PowerPAK 8 x 8L S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 TC = 25 °C a Continuous drain current TC = 125 °C Continuous source current (diode conduction) Pulsed drain current b Single pulse avalanche current L = 0.1 mH Single pulse avalanche energy TC = 25 °C Maximum power dissipation TC = 125 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) ID 141 136 IDM 600 IAS 70 EAS 245 TJ, Tstg d, e V 200 IS PD UNIT 150 50 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 50 RthJC 1 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S17-0228-Rev. A, 13-Feb-17 Document Number: 71828 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ100E www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3 3.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 500 VGS = 10 V VDS  5 V 100 - - VGS = 10 V ID = 20 A - 0.0011 0.0015 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0021 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0025 - 122 - VDS = 15 V, ID = 15 A V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Gate-source charge c Gate-drain charge c Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c VGS = 0 V VDS = 25 V, f = 1 MHz Qg VGS = 10 V Qgs VDS = 20 V, ID = 10 A Qgd Rg f = 1 MHz td(on) VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  tr td(off) tf Source-Drain Diode Ratings and Characteristics Pulsed current a ISM Forward voltage VSD - 11 367 14 780 - 6000 7800 - 615 800 - 125 165 - 35 - - 13 - 0.45 0.99 1.50 - 22 32 pF nC  - 8 14 - 52 73 - 14 20 - - 200 A - 0.8 1.1 V ns b IF = 50 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.      Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0228-Rev. A, 13-Feb-17 Document Number: 71828 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ100E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 200 10000 VGS = 10 V thru 5 V 80 100 VGS = 4 V 40 1000 80 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) 100 1st line 2nd line 2nd line ID - Drain Current (A) 160 10000 120 TC = 25 °C 60 40 100 TC = 125 °C 20 TC = -55 °C 0 0 10 0 6 12 18 24 30 10 0 2 8 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 10 Axis Title Axis Title 150 10000 10000 0.6 1st line 2nd line 1000 TC = 25 °C 0.4 100 TC = 125 °C 120 TC = 25 °C 1000 90 1st line 2nd line 0.8 2nd line gfs - Transconductance (S) TC = -55 °C 1.0 2nd line ID - Drain Current (A) 6 VDS - Drain-to-Source Voltage (V) 2nd line 1.2 0.2 4 60 100 TC = 125 °C 30 TC = -55 °C 0.0 0 10 0 2 4 6 8 10 10 0 3 9 12 VGS - Gate-to-Source Voltage (V) 2nd line ID - Drain Current (A) 2nd line Transfer Characteristics Transconductance Axis Title 15 Axis Title 0.005 20000 10000 0.004 10000 0.002 100 VGS = 6 V 0.001 Ciss 1000 Coss 100 12000 1st line 2nd line 1000 0.003 2nd line C - Capacitance (pF) 16000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 6 8000 4000 Crss VGS = 10 V 0.000 10 0 20 40 60 80 100 0 10 0 8 16 24 32 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance S17-0228-Rev. A, 13-Feb-17 40 Document Number: 71828 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ100E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 0.5 10000 ID = 10 A VDS = 20 V 10000 0 6 4 100 2 ID = 5 mA 1000 -0.5 1st line 2nd line 1000 2nd line VGS(th) Variance (V) 8 1st line 2nd line -1.0 100 ID = 250 μA -1.5 0 -2.0 10 0 30 60 90 120 150 10 -50 -25 0 25 TJ - Temperature (°C) 2nd line Gate Charge Threshold Voltage Axis Title Axis Title 100 10000 10000 ID = 10 A 10 1000 1.4 1.1 VGS = 6 V 100 0.8 0.5 0 25 50 0.1 100 0.01 0.001 10 -50 -25 1000 TJ = 25 °C TJ = 150 °C 1 1st line 2nd line VGS = 10 V 2nd line IS - Source Current (A) 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 75 100 125 150 175 Qg - Total Gate Charge (nC) 2nd line 2.0 75 100 125 150 175 10 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title 55 Axis Title 0.005 10000 10000 1000 49 46 100 43 40 10 -50 -25 0 25 50 75 100 125 150 175 2nd line RDS(on) - On-Resistance (Ω) ID = 10 mA 52 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 50 0.004 1000 0.003 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 10 TJ = 150 °C 0.002 100 0.001 TJ = 25 °C 0.000 10 0 2 4 6 8 10 TJ - Junction Temperature (°C) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Drain Source Breakdown vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage S17-0228-Rev. A, 13-Feb-17 Document Number: 71828 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ100E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title IDM limited 1000 10000 100 μs ID limited 1000 1 ms 10 ms 10 Limited by RDS(on) (1) 100 ms, 1 s, 10 s, DC 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 BVDSS limited 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case  Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71828. S17-0228-Rev. A, 13-Feb-17 Document Number: 71828 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 8 x 8L Case Outline D2 E5 L1 D3 K D3 D7 D5 D5 D7 D5 E1 E W3 W2 W1 D5 E2 E3 b2 K F Bottom view (single) 0.25 Gauge line Top view (single) E5 L θ e W4 D1 D E4 E1 E b1 D5 D4 A2 A1 b D6 E2 E3 W4 D6 W W3 W2 W1 D5 E4 b2 D4 b b1 D1 D e Bottom view (dual) DIM. A C A3 Top view (dual) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 1.70 1.80 1.90 0.067 0.071 MAX. 0.075 A1 0.00 0.08 0.13 0.000 0.003 0.005 A2 0.25 0.30 0.35 0.010 0.012 0.014 A3 0.55 0.62 0.70 0.022 0.024 0.028 b 0.92 1.00 1.08 0.036 0.039 0.043 b1 1.02 1.10 1.18 0.040 0.043 0.046 b2 7.80 7.90 8.00 0.307 0.311 0.315 c 0.20 0.25 0.30 0.008 0.010 0.012 D 8.00 8.10 8.25 0.315 0.319 0.325 D1 7.80 7.90 8.00 0.307 0.311 0.315 D2 6.70 6.80 6.90 0.264 0.268 0.272 D3 2.85 2.95 3.05 0.112 0.116 0.120 D4 6.11 6.21 6.31 0.241 0.244 0.248 D5 0.37 0.47 0.57 0.015 0.019 0.022 D6 2.49 2.59 2.69 0.098 0.102 0.106 D7 1.76 1.86 1.96 0.069 0.073 0.077 Revision: 16-Oct-17 Document Number: 67734 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. e 1.95 2.00 2.05 0.077 0.079 0.081 E 7.90 8.00 8.10 0.311 0.315 0.319 E1 6.12 6.22 6.32 0.241 0.245 0.249 E2 3.94 4.04 4.14 0.140 0.159 0.163 E3 4.69 4.79 4.89 0.185 0.189 0.193 E4 3.23 3.33 3.43 0.127 0.131 0.135 E5 0.65 0.75 0.85 0.026 0.030 0.033 F 0.00 0.10 0.15 0.000 0.004 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.80 0.90 1.00 0.031 0.035 0.039 W 0.30 0.40 0.50 0.012 0.016 0.020 W1 0.30 0.40 0.50 0.012 0.016 0.020 W2 4.39 4.49 4.59 0.173 0.177 0.181 W3 4.54 4.64 4.74 0.179 0.183 0.187 W4 0.32 0.37 0.42 0.013 0.015 0.017  6° 10° 14° 6° 10° 14° C17-1388-Rev. B, 16-Oct-17 DWG: 6026 Revision: 16-Oct-17 Document Number: 67734 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for PowerPAK® 8 x 8L Single 8.00 (0.31) 0.50 (0.02) 4.05 (0.16) 3.55 (0.14) Y 3.99 (0.16) 4.59 (0.18) 6.90 (0.27) (0, 0) 0.44 (0.02) X 0.54 (0.02) 0.85 (0.03) 6.11 (0.24) 1.29 (0.05) 1.94 (0.08) 8.25 (0.32) 3.23 (0.13) 0.82 (0.03) 2.47 (0.10) 3.62 (0.14) 4.05 (0.16) 2.03 (0.08) 1.15 (0.05) 0.88 (0.03) Dimensions in millimeters (inches) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 08-Apr-15 1 Document Number: 67477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000
SQJQ100E-T1_GE3 价格&库存

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SQJQ100E-T1_GE3
  •  国内价格 香港价格
  • 1+37.979271+4.91472
  • 10+24.9257710+3.22553
  • 100+17.52301100+2.26757
  • 500+14.71659500+1.90441

库存:8968

SQJQ100E-T1_GE3

    库存:0

    SQJQ100E-T1_GE3

      库存:0

      SQJQ100E-T1_GE3
      •  国内价格 香港价格
      • 2000+12.496372000+1.61710
      • 4000+12.023424000+1.55590

      库存:8968