SQJQ100E
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Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® 8 x 8L Single
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
• Thin 1.9 mm height
8
m
m
1
m
1m
8.
Top View
4
S
3
S
2
S
1
G
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Bottom View
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () at VGS = 10 V
ID (A)
200
Configuration
Package
G
0.0015
N-Channel MOSFET
Single
PowerPAK 8 x 8L
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
40
Gate-source voltage
VGS
± 20
TC = 25 °C a
Continuous drain current
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current b
Single pulse avalanche current
L = 0.1 mH
Single pulse avalanche energy
TC = 25 °C
Maximum power dissipation
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
ID
141
136
IDM
600
IAS
70
EAS
245
TJ, Tstg
d, e
V
200
IS
PD
UNIT
150
50
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
LIMIT
RthJA
50
RthJC
1
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S17-0228-Rev. A, 13-Feb-17
Document Number: 71828
1
For technical questions, contact: automostechsupport@vishay.com
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3
3.5
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward
transconductance b
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
500
VGS = 10 V
VDS 5 V
100
-
-
VGS = 10 V
ID = 20 A
-
0.0011
0.0015
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.0021
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.0025
-
122
-
VDS = 15 V, ID = 15 A
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate
charge c
Gate-source charge c
Gate-drain
charge c
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
VGS = 0 V
VDS = 25 V, f = 1 MHz
Qg
VGS = 10 V
Qgs
VDS = 20 V, ID = 10 A
Qgd
Rg
f = 1 MHz
td(on)
VDD = 20 V, RL = 2
ID 10 A, VGEN = 10 V, Rg = 1
tr
td(off)
tf
Source-Drain Diode Ratings and Characteristics
Pulsed current a
ISM
Forward voltage
VSD
-
11 367
14 780
-
6000
7800
-
615
800
-
125
165
-
35
-
-
13
-
0.45
0.99
1.50
-
22
32
pF
nC
-
8
14
-
52
73
-
14
20
-
-
200
A
-
0.8
1.1
V
ns
b
IF = 50 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0228-Rev. A, 13-Feb-17
Document Number: 71828
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ100E
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
200
10000
VGS = 10 V thru 5 V
80
100
VGS = 4 V
40
1000
80
1st line
2nd line
1000
120
2nd line
ID - Drain Current (A)
100
1st line
2nd line
2nd line
ID - Drain Current (A)
160
10000
120
TC = 25 °C
60
40
100
TC = 125 °C
20
TC = -55 °C
0
0
10
0
6
12
18
24
30
10
0
2
8
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
10
Axis Title
Axis Title
150
10000
10000
0.6
1st line
2nd line
1000
TC = 25 °C
0.4
100
TC = 125 °C
120
TC = 25 °C
1000
90
1st line
2nd line
0.8
2nd line
gfs - Transconductance (S)
TC = -55 °C
1.0
2nd line
ID - Drain Current (A)
6
VDS - Drain-to-Source Voltage (V)
2nd line
1.2
0.2
4
60
100
TC = 125 °C
30
TC = -55 °C
0.0
0
10
0
2
4
6
8
10
10
0
3
9
12
VGS - Gate-to-Source Voltage (V)
2nd line
ID - Drain Current (A)
2nd line
Transfer Characteristics
Transconductance
Axis Title
15
Axis Title
0.005
20000
10000
0.004
10000
0.002
100
VGS = 6 V
0.001
Ciss
1000
Coss
100
12000
1st line
2nd line
1000
0.003
2nd line
C - Capacitance (pF)
16000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
6
8000
4000
Crss
VGS = 10 V
0.000
10
0
20
40
60
80
100
0
10
0
8
16
24
32
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
S17-0228-Rev. A, 13-Feb-17
40
Document Number: 71828
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ100E
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
0.5
10000
ID = 10 A
VDS = 20 V
10000
0
6
4
100
2
ID = 5 mA
1000
-0.5
1st line
2nd line
1000
2nd line
VGS(th) Variance (V)
8
1st line
2nd line
-1.0
100
ID = 250 μA
-1.5
0
-2.0
10
0
30
60
90
120
150
10
-50 -25
0
25
TJ - Temperature (°C)
2nd line
Gate Charge
Threshold Voltage
Axis Title
Axis Title
100
10000
10000
ID = 10 A
10
1000
1.4
1.1
VGS = 6 V
100
0.8
0.5
0
25
50
0.1
100
0.01
0.001
10
-50 -25
1000
TJ = 25 °C
TJ = 150 °C
1
1st line
2nd line
VGS = 10 V
2nd line
IS - Source Current (A)
1.7
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
75 100 125 150 175
Qg - Total Gate Charge (nC)
2nd line
2.0
75 100 125 150 175
10
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
55
Axis Title
0.005
10000
10000
1000
49
46
100
43
40
10
-50 -25
0
25
50
75 100 125 150 175
2nd line
RDS(on) - On-Resistance (Ω)
ID = 10 mA
52
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
50
0.004
1000
0.003
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
10
TJ = 150 °C
0.002
100
0.001
TJ = 25 °C
0.000
10
0
2
4
6
8
10
TJ - Junction Temperature (°C)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Drain Source Breakdown vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
S17-0228-Rev. A, 13-Feb-17
Document Number: 71828
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ100E
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
IDM limited
1000
10000
100 μs
ID limited
1000
1 ms
10 ms
10
Limited by RDS(on) (1)
100 ms, 1 s, 10 s, DC
1
1st line
2nd line
2nd line
ID - Drain Current (A)
100
100
BVDSS limited
0.1
TC = 25 °C
Single pulse
0.01
0.01
(1)
0.1
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71828.
S17-0228-Rev. A, 13-Feb-17
Document Number: 71828
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 8 x 8L Case Outline
D2
E5
L1
D3
K
D3
D7 D5 D5 D7
D5
E1
E
W3
W2
W1
D5
E2
E3
b2
K
F
Bottom view (single)
0.25 Gauge line
Top view (single)
E5
L
θ
e
W4
D1
D
E4
E1
E
b1
D5
D4
A2
A1
b
D6
E2
E3
W4
D6
W
W3
W2
W1
D5
E4
b2
D4
b
b1
D1
D
e
Bottom view (dual)
DIM.
A
C
A3
Top view (dual)
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
A
1.70
1.80
1.90
0.067
0.071
MAX.
0.075
A1
0.00
0.08
0.13
0.000
0.003
0.005
A2
0.25
0.30
0.35
0.010
0.012
0.014
A3
0.55
0.62
0.70
0.022
0.024
0.028
b
0.92
1.00
1.08
0.036
0.039
0.043
b1
1.02
1.10
1.18
0.040
0.043
0.046
b2
7.80
7.90
8.00
0.307
0.311
0.315
c
0.20
0.25
0.30
0.008
0.010
0.012
D
8.00
8.10
8.25
0.315
0.319
0.325
D1
7.80
7.90
8.00
0.307
0.311
0.315
D2
6.70
6.80
6.90
0.264
0.268
0.272
D3
2.85
2.95
3.05
0.112
0.116
0.120
D4
6.11
6.21
6.31
0.241
0.244
0.248
D5
0.37
0.47
0.57
0.015
0.019
0.022
D6
2.49
2.59
2.69
0.098
0.102
0.106
D7
1.76
1.86
1.96
0.069
0.073
0.077
Revision: 16-Oct-17
Document Number: 67734
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
e
1.95
2.00
2.05
0.077
0.079
0.081
E
7.90
8.00
8.10
0.311
0.315
0.319
E1
6.12
6.22
6.32
0.241
0.245
0.249
E2
3.94
4.04
4.14
0.140
0.159
0.163
E3
4.69
4.79
4.89
0.185
0.189
0.193
E4
3.23
3.33
3.43
0.127
0.131
0.135
E5
0.65
0.75
0.85
0.026
0.030
0.033
F
0.00
0.10
0.15
0.000
0.004
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.80
0.90
1.00
0.031
0.035
0.039
W
0.30
0.40
0.50
0.012
0.016
0.020
W1
0.30
0.40
0.50
0.012
0.016
0.020
W2
4.39
4.49
4.59
0.173
0.177
0.181
W3
4.54
4.64
4.74
0.179
0.183
0.187
W4
0.32
0.37
0.42
0.013
0.015
0.017
6°
10°
14°
6°
10°
14°
C17-1388-Rev. B, 16-Oct-17
DWG: 6026
Revision: 16-Oct-17
Document Number: 67734
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
Recommended Minimum PADs for PowerPAK® 8 x 8L Single
8.00
(0.31)
0.50
(0.02)
4.05
(0.16)
3.55
(0.14)
Y
3.99
(0.16)
4.59
(0.18)
6.90
(0.27)
(0, 0)
0.44
(0.02)
X
0.54
(0.02)
0.85
(0.03)
6.11
(0.24)
1.29
(0.05)
1.94
(0.08)
8.25
(0.32)
3.23
(0.13)
0.82
(0.03)
2.47
(0.10)
3.62
(0.14)
4.05
(0.16)
2.03
(0.08)
1.15
(0.05)
0.88
(0.03)
Dimensions in millimeters (inches)
Note
• Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue.
Revision: 08-Apr-15
1
Document Number: 67477
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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Revision: 01-Jan-2022
1
Document Number: 91000