SQJQ100EL-T1_GE3

SQJQ100EL-T1_GE3

  • 厂商:

    TFUNK(威世)

  • 封装:

    PowerTDFN8

  • 描述:

    MOSFETN-CH40V200APWRPAK8X8

  • 数据手册
  • 价格&库存
SQJQ100EL-T1_GE3 数据手册
SQJQ100EL www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® 8 x 8L Single • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D • Fully lead (Pb)-free device • Thin 1.9 mm height 8 m m 1 8.1 mm Top View 4 S 3 S 2 S 1 G • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Bottom View D PRODUCT SUMMARY VDS (V) 40 RDS(on) () at VGS = 10 V 0.0012 RDS(on) () at VGS = 4.5 V 0.0015 ID (A) 200 Configuration Package G S Single N-Channel MOSFET PowerPAK 8 x 8L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 141 136 IDM 600 IAS 50 EAS 125 TJ, Tstg Soldering recommendations (peak temperature) d, e V 200 IS PD UNIT 150 50 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 50 RthJC 1 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S17-0237-Rev. B, 13-Feb-17 Document Number: 68443 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ100EL www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2 2.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 500 VGS = 10 V VDS  5 V 100 - - VGS = 10 V ID = 20 A - 0.0009 0.0012 VGS = 4.5 V ID = 10 A - 0.0011 0.0015 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0018 VGS = 10 V ID = 20 A, TJ = 175 °C VDS = 15 V, ID = 15 A - - 0.0022 - 122 - - 10 810 14 500 - 6500 8500 V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss - 700 950 Total gate charge c Qg - 140 220 - 30 - Gate-source Gate-drain charge c charge c Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Qgs VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 10 A Qgd Rg td(off) nC - 20 - f = 1 MHz 0.45 0.99 1.50 - 24 40 VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  - 60 100 - 60 100 - 30 50 - - 200 A - 0.8 1.2 V td(on) tr pF tf  ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD IF = 50 A, VGS = 0 Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature      Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0237-Rev. B, 13-Feb-17 Document Number: 68443 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ100EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 155 10000 10000 120 VGS = 10 V thru 4 V 100 100 31 80 TC = 25 °C 60 40 100 TC = -55 °C 20 0 0 10 0 2 4 6 8 10 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 0.005 TC = -55 °C 160 TC = 25 °C 1000 1st line 2nd line 120 80 TC = 125 °C 100 40 2nd line RDS(on) - On-Resistance (Ω) 10000 10000 0.004 1000 0.003 1st line 2nd line 200 2nd line gfs - Transconductance (S) 1000 TC = 125 °C 1st line 2nd line VGS = 3 V 62 2nd line ID - Drain Current (A) 1000 93 1st line 2nd line 2nd line ID - Drain Current (A) 124 0.002 100 VGS = 4.5 V 0.001 VGS = 10 V 0 0.000 10 0 3 6 9 12 15 18 10 0 20 Transconductance On-Resistance vs. Drain Current Axis Title 100 4000 Crss 0 10 16 24 32 40 10000 ID = 10 A VDS = 20 V 8 1000 6 1st line 2nd line 1st line 2nd line Coss 2nd line VGS - Gate-to-Source Voltage (V) 1000 Ciss 12000 8000 4 100 2 0 10 0 30 60 90 120 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S17-0237-Rev. B, 13-Feb-17 100 10 10000 16000 2nd line C - Capacitance (pF) 80 ID - Drain Current (A) 2nd line Axis Title 8 60 ID - Drain Current (A) 2nd line 20000 0 40 150 Document Number: 68443 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ100EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 VGS = 10 V 10 VGS = 4.5 V 1.1 100 0.8 0.5 2nd line IS - Source Current (A) 1000 1.4 0 25 50 1000 1 TJ = 25 °C 0.1 100 0.01 0.001 10 -50 -25 TJ = 150 °C 10 0 75 100 125 150 175 0.2 0.4 0.6 1.0 1.2 VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.005 10000 10000 46 100 43 0.004 1000 0.003 1st line 2nd line 1000 49 2nd line RDS(on) - On-Resistance (Ω) ID = 1 mA 52 1st line 2nd line 0.002 100 TJ = 150 °C 0.001 TJ = 25 °C 40 0.000 10 -50 -25 0 25 50 75 100 125 150 175 10 0 2 4 6 8 10 TJ - Junction Temperature (°C) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Drain Source Breakdown vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 0.5 IDM limited 1000 10000 10000 100 μs 100 1000 -0.3 1st line 2nd line ID = 5 mA -0.7 100 ID = 250 μA 2nd line ID - Drain Current (A) 0.1 ID limited 1000 1 ms 10 ms 10 Limited by RDS(on) (1) 100 ms, 1 s, 10 s, DC 1 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 0.8 TJ - Junction Temperature (°C) 2nd line 55 2nd line VGS(th) Variance (V) 1st line 2nd line ID = 20 A 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 100 BVDSS limited 0.1 -1.1 TC = 25 °C Single pulse -1.5 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) 2nd line Threshold Voltage S17-0237-Rev. B, 13-Feb-17 0.01 0.01 (1) 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 68443 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ100EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68443. S17-0237-Rev. B, 13-Feb-17 Document Number: 68443 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 8 x 8L Case Outline D2 E5 L1 D3 K D3 D7 D5 D5 D7 D5 E1 E W3 W2 W1 D5 E2 E3 b2 K F Bottom view (single) 0.25 Gauge line Top view (single) E5 L θ e W4 D1 D E4 E1 E b1 D5 D4 A2 A1 b D6 E2 E3 W4 D6 W W3 W2 W1 D5 E4 b2 D4 b b1 D1 D e Bottom view (dual) DIM. A C A3 Top view (dual) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 1.70 1.80 1.90 0.067 0.071 MAX. 0.075 A1 0.00 0.08 0.13 0.000 0.003 0.005 A2 0.25 0.30 0.35 0.010 0.012 0.014 A3 0.55 0.62 0.70 0.022 0.024 0.028 b 0.92 1.00 1.08 0.036 0.039 0.043 b1 1.02 1.10 1.18 0.040 0.043 0.046 b2 7.80 7.90 8.00 0.307 0.311 0.315 c 0.20 0.25 0.30 0.008 0.010 0.012 D 8.00 8.10 8.25 0.315 0.319 0.325 D1 7.80 7.90 8.00 0.307 0.311 0.315 D2 6.70 6.80 6.90 0.264 0.268 0.272 D3 2.85 2.95 3.05 0.112 0.116 0.120 D4 6.11 6.21 6.31 0.241 0.244 0.248 D5 0.37 0.47 0.57 0.015 0.019 0.022 D6 2.49 2.59 2.69 0.098 0.102 0.106 D7 1.76 1.86 1.96 0.069 0.073 0.077 Revision: 16-Oct-17 Document Number: 67734 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. e 1.95 2.00 2.05 0.077 0.079 0.081 E 7.90 8.00 8.10 0.311 0.315 0.319 E1 6.12 6.22 6.32 0.241 0.245 0.249 E2 3.94 4.04 4.14 0.140 0.159 0.163 E3 4.69 4.79 4.89 0.185 0.189 0.193 E4 3.23 3.33 3.43 0.127 0.131 0.135 E5 0.65 0.75 0.85 0.026 0.030 0.033 F 0.00 0.10 0.15 0.000 0.004 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.80 0.90 1.00 0.031 0.035 0.039 W 0.30 0.40 0.50 0.012 0.016 0.020 W1 0.30 0.40 0.50 0.012 0.016 0.020 W2 4.39 4.49 4.59 0.173 0.177 0.181 W3 4.54 4.64 4.74 0.179 0.183 0.187 W4 0.32 0.37 0.42 0.013 0.015 0.017  6° 10° 14° 6° 10° 14° C17-1388-Rev. B, 16-Oct-17 DWG: 6026 Revision: 16-Oct-17 Document Number: 67734 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for PowerPAK® 8 x 8L Single 8.00 (0.31) 0.50 (0.02) 4.05 (0.16) 3.55 (0.14) Y 3.99 (0.16) 4.59 (0.18) 6.90 (0.27) (0, 0) 0.44 (0.02) X 0.54 (0.02) 0.85 (0.03) 6.11 (0.24) 1.29 (0.05) 1.94 (0.08) 8.25 (0.32) 3.23 (0.13) 0.82 (0.03) 2.47 (0.10) 3.62 (0.14) 4.05 (0.16) 2.03 (0.08) 1.15 (0.05) 0.88 (0.03) Dimensions in millimeters (inches) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 08-Apr-15 1 Document Number: 67477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000
SQJQ100EL-T1_GE3 价格&库存

很抱歉,暂时无法提供与“SQJQ100EL-T1_GE3”相匹配的价格&库存,您可以联系我们找货

免费人工找货
SQJQ100EL-T1_GE3

    库存:0

    SQJQ100EL-T1_GE3
    •  国内价格 香港价格
    • 1+37.979271+4.91472
    • 10+24.9257710+3.22553
    • 100+17.52301100+2.26757
    • 500+14.71659500+1.90441

    库存:0

    SQJQ100EL-T1_GE3
    •  国内价格 香港价格
    • 2000+12.496372000+1.61710
    • 4000+12.023424000+1.55590

    库存:0