SQJQ130EL
www.vishay.com
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK
K® 8 x 8L
• TrenchFET® Gen IV power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
• Thin 1.6 mm package
S
8
m
m
S
S
G
1
7.9
S
4
mm
Top View
S
3
S
2
G
1
• Very low thermal resistance
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Bottom View
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω) at VGS = 10 V
0.00052
RDS(on) (Ω) at VGS = 4.5 V
0.0007
ID (A)
445
Configuration
Package
G
S
Single
N-Channel MOSFET
PowerPAK 8 x 8L
ORDERING INFORMATION
Package
PowerPAK 8 x 8L
Lead (Pb)-free and halogen-free
SQJQ130EL
(for detailed order number please see www.vishay.com/doc?79776)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
30
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
445
545
IDM
445
IAS
86
EAS
374
TJ, Tstg
Soldering recommendations (peak temperature) d
V
445
IS
PD
UNIT
600
200
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
LIMIT
RthJA
44
RthJC
0.25
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
S22-0112-Rev. A, 14-Feb-2022
Document Number: 78005
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ130EL
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
VDS
VGS = 0, ID = 250 μA
30
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 30 V
-
-
1
VGS = 0 V
VDS = 30 V, TJ = 125 °C
-
-
200
VGS = 0 V
VDS = 30 V, TJ = 175 °C
-
-
330
VGS = 10 V
VDS ≥ 5 V
100
-
-
VGS = 10 V
ID = 20 A
-
0.00045
0.00052
VGS = 4.5 V
ID = 20 A
-
0.0006
0.0007
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.0008
VGS = 10 V
ID = 20 A, TJ = 175 °C
VDS = 15 V, ID = 60 A
-
-
0.0009
-
360
-
V
nA
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
VDS = 25 V, f = 1 MHz
VGS = 10 V
Rg
VDS = 15 V, ID = 30 A
f = 1 MHz
td(on)
VDD = 15 V, RL = 0.5 Ω
ID ≅ 30 A, VGEN = 10 V, Rg = 1 Ω
tr
td(off)
tf
Source-Drain Diode Ratings and Characteristics
Reverse recovery time
VGS = 0 V
-
16 675
23 345
-
6850
9560
-
715
1000
-
310
455
-
53
-
-
56
-
0.9
1.9
2.9
-
22
33
-
30
45
-
109
164
-
57
86
pF
nC
Ω
ns
b
trr
-
40
-
ta
-
44
-
-
83
166
tb
VDD = 24 V, IFM = 20 A,
di/dt = 100 A/μs
ns
Reverse recovery charge
Qrr
-
156
312
Reverse recovery current
IRM
-
-
3.4
A
Pulsed current a
ISM
-
-
1600
A
Forward voltage
VSD
-
0.8
1.1
V
IF = 50 A, VGS = 0
nC
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0112-Rev. A, 14-Feb-2022
Document Number: 78005
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ130EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
600
10000
100 000
VGS = 10 V thru 4 V
Ciss
100
1000
10 000
Coss
100
1000
Crss
120
10
0
0
2
4
6
8
10
100
10
0
6
12
24
VDS - Drain-to-Source Voltage (V)
Fig. 1 - Output Characteristics
Fig. 4 - Capacitance
Axis Title
1st line
2nd line
TC=125°C
120
100
TC= -55°C
10
4
1000
0.0009
0.0006
VGS = 4.5 V
100
0.0003
VGS = 10 V
0
2
0.0012
1st line
2nd line
1000
180
2nd line
RDS(on) - On-Resistance (Ω)
TC=25°C
10000
0.0015
240
60
30
Axis Title
10000
0
18
VDS - Drain-to-Source Voltage (V)
300
2nd line
ID - Drain Current (A)
1st line
2nd line
VGS = 3 V
240
2nd line
C - Capacitance (pF)
1000
360
1st line
2nd line
2nd line
ID - Drain Current (A)
480
6
8
10
0
10
0
20
40
60
80
100
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Fig. 2 - Transfer Characteristics
Fig. 5 - On-Resistance vs. Drain Current
Axis Title
Axis Title
10000
500
10000
10
200
100
100
10
0
0
20
40
60
80
100
ID = 30 A
VDS = 15 V
8
1000
6
1st line
2nd line
1000
TC = 125 °C
300
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = 25 °C
400
2nd line
VGS - Gate-to-Source Voltage (V)
TC = -55 °C
4
100
2
10
0
0
70
140
210
280
ID - Drain Current (A)
Qg - Total Gate Charge (nC)
Fig. 3 - Transconductance
Fig. 6 - Gate Charge
S22-0112-Rev. A, 14-Feb-2022
350
Document Number: 78005
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ130EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
10000
0.0020
1000
1.3
VGS = 4.5 V
1.0
100
0.7
0.0016
1000
0.0012
1st line
2nd line
VGS = 10 V
2nd line
RDS(on) - On-Resistance (Ω)
ID = 20 A
1.6
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
1.9
0.0008
100
TJ = 150 °C
0.0004
TJ = 25 °C
10
0.4
-50 -25
0
25
50
10
0.0000
75 100 125 150 175
0
2
4
6
8
10
TJ - Junction Temperature (°C)
VGS - Gate-to-Source Voltage (V)
Fig. 7 - On-Resistance vs. Junction Temperature
Fig. 10 - On-Resistance vs. Gate-to-Source Voltage
DM
Axis Title
Axis Title
ID = 1 mA
10 ms
100
39
38
100
37
100 ms
10
1
100
BVDSS limited
0.1
10
36
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
1000
1 s, 10 s,
DC
Limited by RDS(on) a
1st line
2nd line
1000
2nd line
ID - Drain Current (A)
40
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
10000
1000
10000
41
0.01
0.01
TC = 25 °C,
single pulse
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Fig. 8 - Drain Source Breakdown vs. Junction Temperature
Fig. 11 - Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
2nd line
IS - Source Current (A)
100
TJ = 150 °C
10
1
0.1
TJ = 25 °C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Fig. 9 - Source Drain Diode Forward Voltage
S22-0112-Rev. A, 14-Feb-2022
Document Number: 78005
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ130EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
10000
0.8
ID = 250 μA
-0.2
1000
1st line
2nd line
2nd line
VGS(th) - Variance (V)
0.3
-0.7
ID = 5 mA
100
-1.2
10
-1.7
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
Fig. 12 - Threshold Voltage
Axis Title
10000
Duty cycle = 0.5
0.2
0.1
0.1
1000
0.05
0.01
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.02
100
0.001
Single pulse
0.0001
0.0001
0.001
0.01
0.1
1
10
10
1000
100
Square Wave Pulse Duration (s)
Fig. 13 - Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty cycle = 0.5
0.2
1000
0.1
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.05
0.02
100
0.01
Single pulse
0.001
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?78005.
S22-0112-Rev. A, 14-Feb-2022
Document Number: 78005
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 8 x 8L BWL Case Outline 2
c
D2
E3
D5
E4
W4
D6
E2
D6
W1
D5
E5
b2
E1
E
z1
b
e
b1
z2
L1
L
A2
A1
0.25 gauge line
D1
ȧ
Bottom view (single)
A
Top view (single)
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
A
1.50
1.60
1.70
0.059
0.063
MAX.
0.067
A1
0.00
-
0.127
0.000
-
0.005
A2
0.655
0.705
0.755
0.026
0.028
0.030
b
0.92
1.00
1.08
0.036
0.039
0.043
b1
1.02
1.10
1.18
0.040
0.043
0.046
b2
6.84
6.94
7.04
0.269
0.273
0.277
c
0.20
0.25
0.30
0.008
0.010
0.012
D1
7.80
7.90
8.00
0.307
0.311
0.315
D2
6.70
6.80
6.90
0.264
0.268
0.272
D5
0.37
0.47
0.57
0.015
0.019
0.022
D6
2.49
2.59
2.69
0.098
0.102
0.106
e
1.97
2.00
2.03
0.078
0.079
0.080
E
7.90
8.00
8.10
0.311
0.315
0.319
E1
6.12
6.22
6.32
0.241
0.245
0.249
E2
4.21
4.31
4.41
0.166
0.170
0.174
E3
4.92
5.02
5.12
0.194
0.198
0.202
E4
3.80
3.90
4.00
0.150
0.154
0.157
E5
0.65
0.75
0.85
0.026
0.030
0.033
L
0.61
0.68
0.75
0.024
0.027
0.030
L1
1.00
1.07
1.15
0.039
0.042
0.045
W1
0.30
0.40
0.50
0.012
0.016
0.020
W4
0.32
0.37
0.42
0.013
0.015
0.017
z1
0.45
0.55
0.65
0.018
0.022
0.026
z2
1.81
1.91
2.01
0.071
0.075
0.079
0°
-
5°
0°
-
5°
ECN: S19-0643-Rev. B, 05-Aug-2019
DWG: 6073
Note
• Millimeter will govern
Revison: 05-Aug-2019
Document Number: 79736
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
1
Document Number: 91000