SQJQ144AER
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® 8 x 8LR
D
5
10
.2
mm
G
4
S
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
• Thin 1.6 mm package
S
S
8m
D
6
• TrenchFET® Gen IV power MOSFET
D
D 8
7
m
Top View
S
2
S
1
S
3
G
4
• Very low thermal resistance
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Bottom View
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
40
ID (A)
Configuration
G
0.0009
575
Single
S
N-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK 8 x 8LR
Lead (Pb)-free and halogen-free
SQJQ144AER
(for detailed order number please see www.vishay.com/doc?79776)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
40
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
330
545
IDM
1800
IAS
60
EAS
180
TJ, Tstg
Soldering recommendations (peak temperature) c
V
575
IS
PD
UNIT
600
200
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount b
SYMBOL
LIMIT
RthJA
44
RthJC
0.25
UNIT
°C/W
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
S21-0139-Rev. A, 22-Feb-2021
Document Number: 79349
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ144AER
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2
3
3.5
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS ≥ 5 V
100
-
-
VGS = 10 V
ID = 20 A
-
0.0007
0.0009
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.0015
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.0019
-
160
-
VDS = 15 V, ID = 60 A
V
nA
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Total gate charge c
Gate-source
charge c
Gate-drain charge c
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
-
7220
9020
-
2290
2860
Crss
-
175
220
Qg
-
116
145
-
36
-
-
25
-
0.9
1.6
2.6
-
17
27
Qgs
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 20 V, ID = 30 A
Qgd
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = 20 V, RL = 0.66 Ω
ID ≅ 30 A, VGEN = 10 V, Rg = 1 Ω
tf
-
27
41
-
41
62
-
18
27
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics b
Reverse recovery time
trr
Reverse recovery charge
Qrr
Reverse recovery current
Pulsed current a
Forward voltage
VSD
-
66
-
ns
-
94
-
nC
IRM
-
-
-3.6
A
ISM
-
-
1600
A
-
0.8
1.1
V
VDD = 32 V, IFM = 15 A,
di/dt = 100 A/μs
IF = 50 A, VGS = 0
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-0139-Rev. A, 22-Feb-2021
Document Number: 79349
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ144AER
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
400
10000
150
10000
100
1000
VGS = 10 V thru 6 V
100
1st line
2nd line
VGS = 5 V
160
2nd line
ID - Drain Current (A)
1000
240
1st line
2nd line
2nd line
ID - Drain Current (A)
320
50
100
TC = 25 °C
80
VGS = 4 V
TC = 125 °C
0
0
2
4
6
8
TC = -55 °C
0
10
10
10
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
10
Axis Title
200
0.0020
10000
10000
80
100
40
0
16
32
48
64
VGS = 7.5 V
0.0010
100
VGS = 10 V
0
10
0
1000
80
10
0
20
40
Transconductance
On-Resistance vs. Drain Current
Axis Title
Coss
1000
100
Crss
100
10
16
24
32
40
10000
ID = 30 A
VDS = 20 V
8
1000
6
1st line
2nd line
1000
2nd line
VGS - Gate-to-Source Voltage (V)
Ciss
10 000
4
100
2
0
10
0
30
60
90
120
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S21-0139-Rev. A, 22-Feb-2021
100
10
10000
1st line
2nd line
2nd line
C - Capacitance (pF)
80
ID - Drain Current (A)
Axis Title
8
60
ID - Drain Current (A)
100 000
0
1st line
2nd line
1000
TC = 125 °C
120
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = 25 °C
160
2nd line
RDS(on) - On-Resistance (Ω)
TC = -55 °C
150
Document Number: 79349
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ144AER
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
ID = 15 A
VGS = 7.5 V
1.3
100
0.9
0.5
25
50
1000
1
TJ = 25 °C
100
0.1
0.01
10
0
TJ = 150 °C
10
1st line
2nd line
1000
2nd line
IS - Source Current (A)
1.7
-50 -25
10000
VGS = 10 V
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.1
75 100 125 150 175
10
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
52
0.005
10000
10000
1000
49
48
100
47
0.004
1000
0.003
1st line
2nd line
50
2nd line
RDS(on) - On-Resistance (Ω)
51
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
0.002
TJ = 150 °C
100
TJ = 125 °C
0.001
TJ = 25 °C
46
0
10
-50 -25
0
25
50
75 100 125 150 175
10
2
4
6
8
10
TJ - Junction Temperature (°C)
VGS - Gate-to-Source Voltage (V)
Drain Source Breakdown vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
0.6
10 000
10000
10000
IDM limited
1000
ID = 5 mA
-0.6
-1.0
100
ID = 250 μA
ID limited
1000
100
-1.8
10
-50 -25
0
25
50
75 100 125 150 175
1 ms 100
Limited by RDS(on) a
1
-1.4
100 μs
10
0.1
0.01
BVDSS limited
TC = 25 °C,
single pulse
1st line
2nd line
-0.2
2nd line
ID - Drain Current (A)
1000
1st line
2nd line
2nd line
VGS(th) - Variance (V)
0.2
10 ms
100 ms
1 s, 10 s, DC
10
0.1
1
10
TJ - Junction Temperature (°C)
VDS - Drain-to-Source Voltage (V)
Threshold Voltage
Safe Operating Area
100
Note
a. VGS > minimum VGS at which RDS(on) is specified
S21-0139-Rev. A, 22-Feb-2021
Document Number: 79349
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ144AER
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
Duty Cycle = 0.5
0.2
0.1
0.1
1000
0.05
0.02
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
1
0.01
100
0.001
Single pulse
0.0001
0.0001
10
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty Cycle = 0.5
0.2
1000
0.1
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.05
0.02
0.01
0.001
0.0001
100
Single pulse
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?79349.
S21-0139-Rev. A, 22-Feb-2021
Document Number: 79349
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2023
1
Document Number: 91000
