SQJQ150E
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Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK
K® 8 x 8L
• TrenchFET® Gen IV power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
• Thin 1.6 mm package
S
8
m
m
S
S
G
1
7.9
S
4
mm
Top View
S
3
S
2
G
1
• Very low thermal resistance
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Bottom View
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () at VGS = 10 V
ID (A)
233
Configuration
Package
G
0.0019
Single
S
PowerPAK 8 x 8L
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
40
Gate-source voltage
VGS
± 20
TC = 25 °C
Continuous drain current
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current
L = 0.1 mH
Single pulse avalanche energy
TC = 25 °C
Maximum power dissipation
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
ID
134
170
IDM
930
IAS
38
PD
TJ, Tstg
c
V
233
IS
EAS
UNIT
72
187
62
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount b
SYMBOL
LIMIT
RthJA
44
RthJC
0.8
UNIT
°C/W
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
S20-0446-Rev. A, 15-Jun-2020
Document Number: 77649
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For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ150E
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2
2.8
3.5
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS 5 V
100
-
-
VGS = 10 V
ID = 20 A
-
0.0015
0.0019
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.003
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.0035
-
120
-
VDS = 15 V, ID = 30 A
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
Rg
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 20 V, ID = 20 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 20 V, RL = 1.0 ,
ID 20 A, VGEN = 10 V, Rg = 1
tf
-
3316
4643
-
1137
1592
-
134
188
-
61
92
-
17
-
-
17
-
0.8
1.7
2.6
-
17
27
-
19
29
-
30
45
-
10
15
pF
nC
ns
Source-Drain Diode Ratings and Characteristics b
Reverse recovery time
trr
Reverse recovery charge
Qrr
Reverse recovery current
Pulsed current a
Forward voltage
VSD
-
40
80
ns
-
34
68
nC
IRM
-
-1.5
-
A
ISM
-
-
660
A
-
0.8
1.1
V
VDD = 32 V, IFM = 15 A,
di/dt = 100 A/μs
IF = 50 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S20-0446-Rev. A, 15-Jun-2020
Document Number: 77649
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ150E
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
320
50
10000
10000
VGS = 10 V thru 7 V
1st line
2nd line
VGS = 6 V
160
VGS = 5 V
100
80
1000
30
1st line
2nd line
2nd line
ID - Drain Current (A)
1000
2nd line
ID - Drain Current (A)
40
240
TC = 25 °C
20
100
10
TC = 125 °C
VGS = 4 V
0
0
2
4
6
8
TC = -55 °C
0
10
10
10
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
6
Axis Title
0.006
2nd line
RDS(on) - On-Resistance (Ω)
2nd line
gfs - Transconductance (S)
TC = -55 °C
160
TC = 25 °C
TC = 125 °C
120
80
40
10000
0.005
0.004
1000
1st line
2nd line
200
0.003
VGS = 7.5 V
0.002
100
0.001
VGS = 10 V
0
0
0
30
60
90
120
10
0
150
20
40
60
80
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
100
Axis Title
Axis Title
10 000
10
10000
10000
1000
Crss
100
100
10
10
0
8
16
24
32
40
ID = 20 A
VDS = 20 V
8
1000
6
1st line
2nd line
1000
2nd line
VGS - Gate-to-Source Voltage (V)
Coss
1st line
2nd line
2nd line
C - Capacitance (pF)
Ciss
4
100
2
0
10
0
14
28
42
56
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S20-0446-Rev. A, 15-Jun-2020
70
Document Number: 77649
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ150E
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
10000
ID = 15 A
1000
1.4
VGS = 7.5 V
1.1
100
TJ = 150 °C
10
1000
1
TJ = 25 °C
100
0.1
0.8
0.5
0.01
10
-50 -25
0
25
50
10
0
75 100 125 150 175
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
56
0.008
10000
10000
1000
53
52
51
100
50
0.006
1000
1st line
2nd line
54
2nd line
RDS(on) - On-Resistance (Ω)
ID = 1 mA
55
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
1st line
2nd line
VGS = 10 V
2nd line
IS - Source Current (A)
1.7
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
0.004
TJ = 150 °C
100
0.002
TJ = 125 °C
49
TJ = 25 °C
48
0
10
-50 -25
0
25
50
75 100 125 150 175
10
0
2
4
6
8
10
TJ - Junction Temperature (°C)
VGS - Gate-to-Source Voltage (V)
Drain Source Breakdown vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
0.6
1000
10000
10000
-0.3
-0.6
ID = 250 μA
-0.9
100
100
IDM limited
1000
ID limited
10
100 μs
-1.2
-1.5
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
Threshold Voltage
1 ms 100
Limited by RDS(on) a
1
0.1
0.01
10 ms
100 ms
BVDSS limited
TC = 25 °C,
single pulse
1st line
2nd line
ID = 5 mA
1000
2nd line
ID - Drain Current (A)
0
1st line
2nd line
2nd line
VGS(th) - Variance (V)
0.3
1 s, 10 s, DC
0.1
1
10
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
Note
a. VGS > minimum VGS at which RDS(on) is specified
S20-0446-Rev. A, 15-Jun-2020
Document Number: 77649
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ150E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
Duty cycle = 0.5
0.2
0.1
0.1
1000
0.05
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
1
0.02
0.01
100
0.001
Single pulse
0.0001
0.0001
10
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty cycle = 0.5
0.2
1000
0.1
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.05
0.02
0.01
100
Single pulse
0.001
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77649.
S20-0446-Rev. A, 15-Jun-2020
Document Number: 77649
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 8 x 8L BWL Case Outline 2
c
D2
E3
D5
E4
W4
D6
E2
D6
W1
D5
E5
b2
E1
E
z1
b
e
b1
z2
L1
L
A2
A1
0.25 gauge line
D1
ȧ
Bottom view (single)
A
Top view (single)
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
A
1.50
1.60
1.70
0.059
0.063
MAX.
0.067
A1
0.00
-
0.127
0.000
-
0.005
A2
0.655
0.705
0.755
0.026
0.028
0.030
b
0.92
1.00
1.08
0.036
0.039
0.043
b1
1.02
1.10
1.18
0.040
0.043
0.046
b2
6.84
6.94
7.04
0.269
0.273
0.277
c
0.20
0.25
0.30
0.008
0.010
0.012
D1
7.80
7.90
8.00
0.307
0.311
0.315
D2
6.70
6.80
6.90
0.264
0.268
0.272
D5
0.37
0.47
0.57
0.015
0.019
0.022
D6
2.49
2.59
2.69
0.098
0.102
0.106
e
1.97
2.00
2.03
0.078
0.079
0.080
E
7.90
8.00
8.10
0.311
0.315
0.319
E1
6.12
6.22
6.32
0.241
0.245
0.249
E2
4.21
4.31
4.41
0.166
0.170
0.174
E3
4.92
5.02
5.12
0.194
0.198
0.202
E4
3.80
3.90
4.00
0.150
0.154
0.157
E5
0.65
0.75
0.85
0.026
0.030
0.033
L
0.61
0.68
0.75
0.024
0.027
0.030
L1
1.00
1.07
1.15
0.039
0.042
0.045
W1
0.30
0.40
0.50
0.012
0.016
0.020
W4
0.32
0.37
0.42
0.013
0.015
0.017
z1
0.45
0.55
0.65
0.018
0.022
0.026
z2
1.81
1.91
2.01
0.071
0.075
0.079
0°
-
5°
0°
-
5°
ECN: S19-0643-Rev. B, 05-Aug-2019
DWG: 6073
Note
• Millimeter will govern
Revison: 05-Aug-2019
Document Number: 79736
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2023
1
Document Number: 91000