SQJQ184ER
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Vishay Siliconix
Automotive N-Channel 80 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® 8 x 8L Reverse Single
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
• Thin 1.9 mm height
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
S
S
G
Top View
Bottom View
D
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
80
ID (A)
Configuration
Package
G
0.0014
430
Single
N-Channel MOSFET
PowerPAK 8 x 8L Reverse
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
80
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
250
450
IDM
1200
IAS
65
EAS
211
TJ, Tstg
Soldering recommendations (peak temperature) c
V
430
IS
PD
UNIT
600
200
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
SYMBOL
PCB
mount b
LIMIT
RthJA
40
RthJC
0.25
UNIT
°C/W
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
S22-0114-Rev. A, 14-Feb-2022
Document Number: 71298
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0, ID = 250 μA
80
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2
3
3.5
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 80 V
-
-
1
VGS = 0 V
VDS = 80 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 80 V, TJ = 175 °C
-
-
500
VGS = 10 V
VDS ≥ 5 V
50
-
-
VGS = 10 V
ID = 20 A
-
0.0012
0.0014
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.00281
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.0037
-
82
-
VDS = 15 V, ID = 15 A
V
nA
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
Rg
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 40 V, ID = 10 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 40 V, RL = 0.8 Ω
ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω
tf
-
11 435
16 009
-
1896
2655
-
92
129
-
183
240
-
47
-
-
85
-
0.7
1.3
2
-
21
28
pF
nC
Ω
-
80
105
-
65
85
-
20
28
-
-
1100
A
-
0.7
1.2
V
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = 40 A, VGS = 0 V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0114-Rev. A, 14-Feb-2022
Document Number: 71298
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ184ER
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
400
300
10000
10000
VGS = 10 V thru 5 V
240
100
1000
180
1st line
2nd line
VGS = 4 V
160
2nd line
ID - Drain Current (A)
1000
240
1st line
2nd line
2nd line
ID - Drain Current (A)
320
120
100
TC = 25 °C
60
80
TC = 125 °C
0
0
10
0
2
4
6
8
TC = -55 °C
10
0
10
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
200
10000
400
10000
TC = 25 °C
80
100
40
TC = 125 °C
10
1
TC = 25 °C
TC = 125 °C
200
100
100
2
3
4
0
5
10
0
20
40
VGS - Gate-to-Source Voltage (V)
60
80
100
ID - Drain Current (A)
Transconductance
Transfer Characteristics
Axis Title
Axis Title
0.004
10000
100 000
10000
0.002
VGS = 7.5 V
100
0.001
10 000
1000
1st line
2nd line
1000
C - Capacitance (pF)
2nd line
Ciss
0.003
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
1000
TC = -55 °C
0
0
300
1st line
2nd line
120
1st line
2nd line
2nd line
ID - Drain Current (A)
1000
2nd line
gfs - Transconductance (S)
TC = -55 °C
160
Coss
1000
100
100
Crss
VGS = 10 V
0.000
10
0
20
40
60
80
100
10
10
0
10
20
30
40
50
60
70
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
S22-0114-Rev. A, 14-Feb-2022
80
Document Number: 71298
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ184ER
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
1000
6
4
100
2
0
40
80
120
160
2.0
VGS = 10 V
1000
1.6
VGS = 7.5 V
1.2
100
0.8
0.4
10
0
10000
ID = 30 A
10
-50 -25
200
0
25
Gate Charge
On-Resistance vs. Junction Temperature
Axis Title
10000
1
100
0.1
TJ = 25 °C
0.01
10
0.2
0.4
0.6
0.8
96
ID = 1 mA
94
1000
92
1st line
2nd line
1000
2nd line
VDS - Drain-to-Source Voltage (V)
10
TJ = 150 °C
10000
98
1st line
2nd line
90
88
100
86
84
82
80
1.0
10
-50 -25
0
25
50
75 100 125 150 175
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
Source Drain Diode Forward Voltage
Drain Source Breakdown vs. Junction Temperature
Axis Title
Axis Title
0.006
0.6
10000
0.2
0.004
0.003
1st line
2nd line
1000
TJ = 150 °C
0.002
100
TJ = 125 °C
0.001
2nd line
VGS(th) - Variance (V)
0.005
10000
-0.2
1000
ID = 5 mA
1st line
2nd line
2nd line
IS - Source Current (A)
75 100 125 150 175
TJ - Junction Temperature (°C)
Axis Title
2nd line
RDS(on) - On-Resistance (Ω)
50
Qg - Total Gate Charge (nC)
100
0
1st line
2nd line
8
2nd line
RDS(on) - On-Resistance (Normalized)
ID = 50 A,
VDS = 40 V
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
2.4
10000
10
-0.6
ID = 250 μA
-1.0
100
-1.4
TJ = 25 °C
0.000
10
2
4
6
8
10
-1.8
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
S22-0114-Rev. A, 14-Feb-2022
Document Number: 71298
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ184ER
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
10000
IDM limited
1000
1000
1 ms
1st line
2nd line
2nd line
ID - Drain Current (A)
100 μs
100
10 ms
10
100 ms, 1 s, 10 s, DC
Limited by RDS(on) (1)
1
100
BVDSS limited
0.1
TC = 25 °C
Single pulse
0.01
0.01
(1)
0.1
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
10000
Duty Cycle = 0.5
0.2
1000
0.1
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.05
0.02
0.01
0.001
0.0001
100
Single pulse
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
S22-0114-Rev. A, 14-Feb-2022
Document Number: 71298
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ184ER
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
Duty Cycle = 0.5
0.2
0.1
0.1
1000
0.05
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
1
0.02
0.01
100
0.001
0.0001
0.0001
Single pulse
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71298.
S22-0114-Rev. A, 14-Feb-2022
Document Number: 71298
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2023
1
Document Number: 91000
