SQJQ186E
www.vishay.com
Vishay Siliconix
Automotive N-Channel 80 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK
K® 8 x 8L
• TrenchFET® Gen IV power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
• Thin 1.9 mm height
S
8
m
m
S
S
G
1
7.9
S
4
mm
Top View
S
3
S
2
G
1
• Material categorization
for definitions of compliance please see
www.vishay.com/doc?99912
D
Bottom View
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
0.0023
ID (A)
Configuration
Package
G
80
245
N-Channel MOSFET
S
Single
PowerPAK 8 x 8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
80
Gate-source voltage
VGS
± 20
TC = 25 °C
Continuous drain current
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current
L = 0.1 mH
Single pulse avalanche energy
TC = 25 °C
Maximum power dissipation
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
ID
141
245
IDM
770
IAS
58
EAS
168
TJ, Tstg
c
V
245
IS
PD
UNIT
357
119
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount b
SYMBOL
LIMIT
RthJA
40
RthJC
0.42
UNIT
°C/W
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257)
S22-0351-Rev. A, 25-Apr-2022
Document Number: 62006
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ186E
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
VDS
VGS = 0, ID = 250 μA
80
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3
3.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 80 V
-
-
1
VGS = 0 V
VDS = 80 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 80 V, TJ = 175 °C
-
-
500
VGS = 10 V
VDS ≥ 5 V
50
-
-
VGS = 10 V
ID = 20 A
-
0.0019
0.0023
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.0047
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.0060
-
90
-
VDS = 15 V, ID = 15 A
V
nA
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
Rg
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 40 V, ID = 50 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 40 V, RL = 4 Ω,
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
-
7537
10 552
-
1182
1655
-
55
77
-
123
185
-
36
-
-
26
-
0.6
1.3
2
-
22
33
-
21
32
-
53
80
-
16
24
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = 40 A, VGS = 0 V
-
-
770
-
0.7
1.2
V
-
63
126
ns
-
105
210
nC
-
32
-
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
31
-
IRM(REC)
-
-3.0
-
Body diode peak reverse recovery current
IF = 10 A, di/dt = 100 A/μs
A
ns
A
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0351-Rev. A, 25-Apr-2022
Document Number: 62006
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ186E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
900
600
10000
VGS = 10 V thru 7 V
500
VGS = 5 V
100
180
VGS = 4 V
400
1000
300
TC = 25 °C
200
100
100
TC = 125 °C
TC = -55 °C
VGS = 3 V
0
0
10
0
2
4
6
8
1st line
2nd line
1000
540
2nd line
ID - Drain Current (A)
VGS = 6 V
1st line
2nd line
2nd line
ID - Drain Current (A)
720
360
10000
10
0
10
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
10
Axis Title
10000
400
0.010
10000
160
100
80
0
0
40
80
120
160
10
200
0.008
1000
0.006
VGS = 4.5 V
0.004
100
0.002
VGS = 10 V
0
10
0
20
80
Transconductance
On-Resistance vs. Drain Current
Axis Title
Coss
1000
100
Crss
100
10
10
32
48
64
80
10000
ID = 50 A
VDS = 40 V
8
1000
6
1st line
2nd line
1000
2nd line
VGS - Gate-to-Source Voltage (V)
Ciss
10 000
4
100
2
0
10
0
26
52
78
104
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S22-0351-Rev. A, 25-Apr-2022
100
10
10000
1st line
2nd line
2nd line
C - Capacitance (pF)
60
ID - Drain Current (A)
Axis Title
16
40
ID - Drain Current (A)
100 000
0
1st line
2nd line
1000
TC = 125 °C
240
2nd line
RDS(on) - On-Resistance (Ω)
TC = 25 °C
320
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = -55 °C
130
Document Number: 62006
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ186E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
10000
1000
1.6
1.2
100
VGS = 4.5 V
0.8
10
1000
1
1st line
2nd line
VGS = 10 V
2.0
2nd line
IS - Source Current (A)
ID = 15 A
2.4
1st line
2nd line
TJ = 150 °C
100
0.1
0.4
TJ = 25 °C
0
0.01
10
-50 -25
0
25
50
75
10
100 125 150 175
0
0.2
0.4
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
10000
0.005
10000
1000
1st line
2nd line
92
90
88
100
86
84
0.004
1000
0.003
TJ = 150 °C
1st line
94
2nd line
RDS(on) - On-Resistance (Ω)
ID = 1 mA
0.002
100
TJ = 125 °C
0.001
TJ = 25 °C
82
80
0
25
50
10
0
10
-50 -25
0
75 100 125 150 175
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Axis Title
Axis Title
0.7
10000
10000
1000
0.1 ms
IDM limited
1 ms
0.3
-0.1
1000
ID = 5 mA
-0.5
-0.9
100
ID = 250 μA
2nd line
ID - Drain Current (A)
100
1st line
2nd line
2nd line
VGS(th) - Variance (V)
1.0
VSD - Source-to-Drain Voltage (V)
Axis Title
2nd line
VDS - Drain-to-Source Voltage (V)
0.8
TJ - Junction Temperature (°C)
98
96
0.6
10 ms
1000
100 ms
1 s, 10 s, DC
10
1
Limited by RDS(on)
100
BVDSS limited
0.1
-1.3
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.8
TC = 25 °C,
single pulse
-1.7
10
-50 -25
0
25
50
75
100 125 150 175
0.01
0.01
0.1
1
10
100
TJ - Junction Temperature (°C)
VDS - Drain-to-Source Voltage (V)
Threshold Voltage
Safe Operating Area
10
1000
Note
a. VGS > minimum VGS at which RDS(on) is specified
S22-0351-Rev. A, 25-Apr-2022
Document Number: 62006
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ186E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
10000
0.1
Duty cycle = 0.5
0.2
0.1
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.05
0.02
100
Single pulse
0.01
0.001
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Axis Title
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
1
0.01
100
0.001
0.0001
0.0001
Single pulse
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62006.
S22-0351-Rev. A, 25-Apr-2022
Document Number: 62006
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 8 x 8L BWL Case Outline 2
c
D2
E3
D5
E4
W4
D6
E2
D6
W1
D5
E5
b2
E1
E
z1
b
e
b1
z2
L1
L
A2
A1
0.25 gauge line
D1
ȧ
Bottom view (single)
A
Top view (single)
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
A
1.50
1.60
1.70
0.059
0.063
MAX.
0.067
A1
0.00
-
0.127
0.000
-
0.005
A2
0.655
0.705
0.755
0.026
0.028
0.030
b
0.92
1.00
1.08
0.036
0.039
0.043
b1
1.02
1.10
1.18
0.040
0.043
0.046
b2
6.84
6.94
7.04
0.269
0.273
0.277
c
0.20
0.25
0.30
0.008
0.010
0.012
D1
7.80
7.90
8.00
0.307
0.311
0.315
D2
6.70
6.80
6.90
0.264
0.268
0.272
D5
0.37
0.47
0.57
0.015
0.019
0.022
D6
2.49
2.59
2.69
0.098
0.102
0.106
e
1.97
2.00
2.03
0.078
0.079
0.080
E
7.90
8.00
8.10
0.311
0.315
0.319
E1
6.12
6.22
6.32
0.241
0.245
0.249
E2
4.21
4.31
4.41
0.166
0.170
0.174
E3
4.92
5.02
5.12
0.194
0.198
0.202
E4
3.80
3.90
4.00
0.150
0.154
0.157
E5
0.65
0.75
0.85
0.026
0.030
0.033
L
0.61
0.68
0.75
0.024
0.027
0.030
L1
1.00
1.07
1.15
0.039
0.042
0.045
W1
0.30
0.40
0.50
0.012
0.016
0.020
W4
0.32
0.37
0.42
0.013
0.015
0.017
z1
0.45
0.55
0.65
0.018
0.022
0.026
z2
1.81
1.91
2.01
0.071
0.075
0.079
0°
-
5°
0°
-
5°
ECN: S19-0643-Rev. B, 05-Aug-2019
DWG: 6073
Note
• Millimeter will govern
Revison: 05-Aug-2019
Document Number: 79736
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2023
1
Document Number: 91000