SQJQ186ER
www.vishay.com
Vishay Siliconix
Automotive N-Channel 80 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® 8 x 8LR
D
5
10
.42
mm
G
4
S
S
D
6
• TrenchFET® Gen IV power MOSFET
D
D 8
7
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
• Thin 1.6 mm package
S
m
8m
Top View
S
2
S
1
S
3
G
4
• Very low thermal resistance
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Bottom View
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
80
ID (A)
Configuration
G
0.0023
329
Single
S
N-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK 8 x 8LR
Lead (Pb)-free and halogen-free
SQJQ186ER
(for detailed order number please see www.vishay.com/doc?79771)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
80
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
189
545
IDM
770
IAS
60
EAS
180
TJ, Tstg
Soldering recommendations (peak temperature) c
V
329
IS
PD
UNIT
600
200
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount b
SYMBOL
LIMIT
RthJA
44
RthJC
0.25
UNIT
°C/W
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
S22-0293-Rev. A, 04-Apr-2022
Document Number: 66838
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ186ER
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
VDS
VGS = 0, ID = 250 μA
80
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3
3.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 80 V
-
-
1
VGS = 0 V
VDS = 80 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 80 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS 5 V
100
-
-
VGS = 10 V
ID = 20 A
-
0.0017
0.0023
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.0045
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.0056
-
100
-
VDS = 15 V, ID = 40 A
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
Rg
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 40 V, ID = 50 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 40 V, RL = 4.0
ID 10 A, VGEN = 10 V, Rg = 1
tf
-
7537
10552
-
1182
1655
-
55
77
-
123
185
-
36
-
-
26
-
0.6
1.3
2.0
-
22
33
-
21
32
-
53
80
-
16
24
pF
nC
ns
Source-Drain Diode Ratings and Characteristics b
Reverse recovery time
trr
Reverse recovery charge
Qrr
Reverse recovery current
Pulsed current a
Forward voltage
VSD
-
63
126
ns
-
105
210
nC
IRM
-
3.0
-
A
ISM
-
-
1600
A
-
0.8
1.1
V
VDD = 64 V, IFM = 40 A,
di/dt = 100 A/μs
IF = 50 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0293-Rev. A, 04-Apr-2022
Document Number: 66838
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ186ER
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
600
VGS = 10 V thru 6 V
1000
1st line
2nd line
VGS = 5 V
300
200
100
200
1000
150
1st line
2nd line
400
100
10000
250
2nd line
ID - Drain Current (A)
500
2nd line
ID - Drain Current (A)
300
10000
TC = 25 °C
100
100
TC = 125 °C
50
VGS = 4 V
TC = -55 °C
0
0
10
0
2
4
6
8
10
10
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
Axis Title
250
0.005
10000
150
TC = 125 °C
100
50
0
0.004
1000
0.003
VGS = 10 V
0.002
100
0.001
0
0
20
40
60
80
100
10
0
20
ID - Drain Current (A)
40
10
1000
1st line
2nd line
1000
Coss
100
100
Crss
10
10
48
64
80
10000
ID = 50 A
VDS = 40 V
8
1000
6
1st line
2nd line
Ciss
2nd line
VGS - Gate-to-Source Voltage (V)
10000
32
4
100
2
0
10
0
30
60
90
120
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S22-0293-Rev. A, 04-Apr-2022
100
Axis Title
Axis Title
16
80
On-Resistance vs. Drain Current
10 000
0
60
ID - Drain Current (A)
Transconductance
2nd line
C - Capacitance (pF)
1st line
2nd line
TC = 25 °C
200
2nd line
RDS(on) - On-Resistance (Ω)
2nd line
gfs - Transconductance (S)
TC = -55 °C
150
Document Number: 66838
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ186ER
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
10000
ID = 15 A
1000
1.7
1.2
100
TJ = 150 °C
10
1000
1
TJ = 25 °C
100
0.1
0.7
0.2
0.01
10
-50 -25
0
25
50
75
10
0
100 125 150 175
0.2
0.4
1.0
1.2
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
0.015
1000
89
86
100
83
2nd line
RDS(on) - On-Resistance (Ω)
ID = 1 mA
10000
0.012
1000
0.009
1st line
2nd line
10000
1st line
2nd line
0.006
TJ = 150 °C
100
0.003
TJ = 25 °C
80
0
10
-50 -25
0
25
50
75
10
100 125 150 175
0
2
4
6
8
10
TJ - Junction Temperature (°C)
VGS - Gate-to-Source Voltage (V)
Drain Source Breakdown vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
0.8
10000
10000
1000
IDM limited
0.3
1 ms
1000
-0.2
1st line
2nd line
ID = 5 mA
-0.7
100
ID = 250 μA
2nd line
ID - Drain Current (A)
100
10 ms
1000
100 ms
1 s, 10 s, DC
10
Limited by RDS(on) a
1
100
BVDSS limited
0.1
-1.2
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
0.8
VSD - Source-to-Drain Voltage (V)
Axis Title
92
0.6
TJ - Junction Temperature (°C)
95
2nd line
VGS(th) - Variance (V)
1st line
2nd line
VGS = 10 V
2nd line
IS - Source Current (A)
2.2
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.7
TC = 25 °C,
single pulse
-1.7
10
-50 -25
0
25
50
75
100 125 150 175
0.01
0.01
0.1
1
10
100
TJ - Junction Temperature (°C)
VDS - Drain-to-Source Voltage (V)
Threshold Voltage
Safe Operating Area
10
1000
Note
a. VGS > minimum VGS at which RDS(on) is specified
S22-0293-Rev. A, 04-Apr-2022
Document Number: 66838
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ186ER
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
10000
Duty cycle = 0.5
0.2
0.1
0.05
0.1
1000
0.02
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.01
100
Single pulse
0.001
0.0001
0.0001
10
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
Duty cycle = 0.5
0.2
1000
0.1
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.05
0.02
0.01
0.001
0.0001
100
Single pulse
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66838.
S22-0293-Rev. A, 04-Apr-2022
Document Number: 66838
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
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Revision: 01-Jan-2023
1
Document Number: 91000
