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Automotive N-Channel 80 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
80
RDS(on) () at VGS = 10 V
• AEC-Q101 qualified
0.003
150
• 100 % Rg and UIS tested
Single
• Fully lead (Pb)-free device
ID (A)
Configuration
Package
• Thin 1.9 mm height
PowerPAK 8 x 8L
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK® 8 x 8L Single
D
D
8
m
m
1
8.1
mm
Top View
4
S
3
S
2
S
1
G
G
S
Bottom View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
80
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode conduction)
Pulsed Drain Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
87
IS
124
210
IAS
53
EAS
140
TJ, Tstg
Soldering Recommendations (Peak temperature) c, d
V
150
IDM
PD
UNIT
136
45
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB mount b
SYMBOL
LIMIT
RthJA
50
RthJC
1.1
UNIT
°C/W
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1373-Rev. A, 11-Jul-16
Document Number: 76718
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
VDS
VGS = 0, ID = 250 μA
80
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3
3.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 80 V
-
-
1
VGS = 0 V
VDS = 80 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 80 V, TJ = 175 °C
-
-
500
VGS = 10 V
VDS 5 V
50
-
-
VGS = 10 V
ID = 20 A
-
0.0024
0.0030
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.0048
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.0060
-
82
-
VDS = 15 V, ID = 15 A
V
nA
μA
A
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
Rg
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 40 V, ID = 10 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 40 V, RL = 4
ID 10 A, VGEN = 10 V, Rg = 1
tf
-
6900
8625
-
3655
4570
-
250
311
-
82
144
-
11
-
-
21
-
0.4
0.8
1.2
-
19
30
pF
nC
-
7.3
11
-
40
60
-
15
23
-
-
210
A
-
0.7
1.2
V
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = 40 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1373-Rev. A, 11-Jul-16
Document Number: 76718
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
200
10000
VGS = 10 V thru 5 V
80
100
VGS = 4 V
40
1000
80
60
TC = 25 °C
40
100
20
0
6
12
18
24
TC = 125 °C
TC = -55 °C
0
10
0
1st line
2nd line
1000
120
2nd line
ID - Drain Current (A)
100
1st line
2nd line
2nd line
ID - Drain Current (A)
160
10000
120
30
10
0
2
4
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
1st line
2nd line
0.6
100
TC = 25 °C
TC = 125 °C
100
TC = -55 °C
80
1000
TC = 25 °C
1st line
2nd line
1000
2nd line
gfs - Transconductance (S)
1.0
0.8
10000
120
10000
0.4
10
Axis Title
Axis Title
2nd line
ID - Drain Current (A)
8
VDS - Drain-to-Source Voltage (V)
2nd line
1.2
0.2
6
60
40
100
TC = 125 °C
20
TC = -55 °C
0.0
0
10
0
1
2
3
4
5
10
0
3
6
ID - Drain Current (A)
2nd line
Transfer Characteristics
Transconductance
Axis Title
100
0.002
7500
Ciss
5000
Coss
Crss
10
60
100
2500
VGS = 10 V
0.000
40
80
100
0
10
0
20
40
60
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
S16-1373-Rev. A, 11-Jul-16
1000
1st line
2nd line
0.004
2nd line
C - Capacitance (pF)
1000
0.006
10000
10 000
0.008
20
15
Axis Title
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
12
VGS - Gate-to-Source Voltage (V)
2nd line
0.010
0
9
80
Document Number: 76718
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
2.5
8
1000
6
4
100
2
0
20
40
60
80
2.1
VGS = 10 V
1.7
VGS = 7.5 V
10
-50 -25
0
25
Gate Charge
On-Resistance vs. Junction Temperature
Axis Title
105
0.1
100
0.01
0.001
0.4
0.6
0.8
1.0
100
1000
95
90
100
85
80
10
0.2
10000
ID = 10 mA
1st line
2nd line
1000
TJ = 25 °C
TJ = 150 °C
2nd line
VDS - Drain-to-Source Voltage (V)
10000
1st line
2nd line
2nd line
IS - Source Current (A)
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
10
1.2
10
-50 -25
0
25
50
75 100 125 150 175
VSD - Source-to-Drain Voltage (V)
2nd line
TJ - Junction Temperature (°C)
2nd line
Source Drain Diode Forward Voltage
Drain Source Breakdown vs. Junction Temperature
Axis Title
Axis Title
0.015
0.5
10000
10000
0
0.009
TJ = 150 °C
0.006
100
ID = 5 mA
1000
-0.5
1st line
2nd line
1000
2nd line
VGS(th) Variance (V)
0.012
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
50
Qg - Total Gate Charge (nC)
2nd line
Axis Title
0
100
0.9
100
100
1
1000
1.3
0.5
10
0
10000
ID = 10 A
1st line
2nd line
ID = 10 A
VDS = 50 V
2nd line
RDS(on) - On-Resistance (Normalized)
10000
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
10
-1.0
100
ID = 250 μA
-1.5
0.003
TJ = 25 °C
0.000
10
0
2
4
6
8
10
-2.0
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
S16-1373-Rev. A, 11-Jul-16
Document Number: 76718
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
1000
10000
IDM limited
100 μs
1000
10
1st line
2nd line
2nd line
ID - Drain Current (A)
100
1 ms
10 ms
100 ms, 1 s,
10 s, DC
Limited by RDS(on) (1)
1
100
BVDSS limited
0.1
TC = 25 °C
Single pulse
0.01
0.01
(1)
0.1
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1
Duty cycle = 0.5
Notes:
PDM
0.2
0.1
t1
0.1
t2
t
1. Duty cycle, D = t1
2
2. Per unit base = RthJA = 180 °C/W
0.05
0.02
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
3. TJM - TA = PDMZthJA
Single pulse
100
(t)
4. Surface mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
S16-1373-Rev. A, 11-Jul-16
Document Number: 76718
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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1
Duty cycle = 0.5
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
10000
0.2
0.1
0.1
100
0.05
Single pulse
0.02
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76718.
S16-1373-Rev. A, 11-Jul-16
Document Number: 76718
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 8 x 8L Case Outline
D2
E5
L1
D3
K
D3
D7 D5 D5 D7
D5
E1
E
W3
W2
W1
D5
E2
E3
b2
K
F
Bottom view (single)
0.25 Gauge line
Top view (single)
E5
L
θ
e
W4
D1
D
E4
E1
E
b1
D5
D4
A2
A1
b
D6
E2
E3
W4
D6
W
W3
W2
W1
D5
E4
b2
D4
b
b1
D1
D
e
Bottom view (dual)
DIM.
A
C
A3
Top view (dual)
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
A
1.70
1.80
1.90
0.067
0.071
MAX.
0.075
A1
0.00
0.08
0.13
0.000
0.003
0.005
A2
0.25
0.30
0.35
0.010
0.012
0.014
A3
0.55
0.62
0.70
0.022
0.024
0.028
b
0.92
1.00
1.08
0.036
0.039
0.043
b1
1.02
1.10
1.18
0.040
0.043
0.046
b2
7.80
7.90
8.00
0.307
0.311
0.315
c
0.20
0.25
0.30
0.008
0.010
0.012
D
8.00
8.10
8.25
0.315
0.319
0.325
D1
7.80
7.90
8.00
0.307
0.311
0.315
D2
6.70
6.80
6.90
0.264
0.268
0.272
D3
2.85
2.95
3.05
0.112
0.116
0.120
D4
6.11
6.21
6.31
0.241
0.244
0.248
D5
0.37
0.47
0.57
0.015
0.019
0.022
D6
2.49
2.59
2.69
0.098
0.102
0.106
D7
1.76
1.86
1.96
0.069
0.073
0.077
Revision: 16-Oct-17
Document Number: 67734
1
For technical questions, contact: pmostechsupport@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
e
1.95
2.00
2.05
0.077
0.079
0.081
E
7.90
8.00
8.10
0.311
0.315
0.319
E1
6.12
6.22
6.32
0.241
0.245
0.249
E2
3.94
4.04
4.14
0.140
0.159
0.163
E3
4.69
4.79
4.89
0.185
0.189
0.193
E4
3.23
3.33
3.43
0.127
0.131
0.135
E5
0.65
0.75
0.85
0.026
0.030
0.033
F
0.00
0.10
0.15
0.000
0.004
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.80
0.90
1.00
0.031
0.035
0.039
W
0.30
0.40
0.50
0.012
0.016
0.020
W1
0.30
0.40
0.50
0.012
0.016
0.020
W2
4.39
4.49
4.59
0.173
0.177
0.181
W3
4.54
4.64
4.74
0.179
0.183
0.187
W4
0.32
0.37
0.42
0.013
0.015
0.017
6°
10°
14°
6°
10°
14°
C17-1388-Rev. B, 16-Oct-17
DWG: 6026
Revision: 16-Oct-17
Document Number: 67734
2
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
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Vishay Siliconix
Recommended Minimum PADs for PowerPAK® 8 x 8L Single
8.00
(0.31)
0.50
(0.02)
4.05
(0.16)
3.55
(0.14)
Y
3.99
(0.16)
4.59
(0.18)
6.90
(0.27)
(0, 0)
0.44
(0.02)
X
0.54
(0.02)
0.85
(0.03)
6.11
(0.24)
1.29
(0.05)
1.94
(0.08)
8.25
(0.32)
3.23
(0.13)
0.82
(0.03)
2.47
(0.10)
3.62
(0.14)
4.05
(0.16)
2.03
(0.08)
1.15
(0.05)
0.88
(0.03)
Dimensions in millimeters (inches)
Note
• Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue.
Revision: 08-Apr-15
1
Document Number: 67477
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Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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Revision: 01-Jan-2022
1
Document Number: 91000