SQJQ100EL
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® 8 x 8L Single
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
• Fully lead (Pb)-free device
• Thin 1.9 mm height
8
m
m
1
8.1
mm
Top View
4
S
3
S
2
S
1
G
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Bottom View
D
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () at VGS = 10 V
0.0012
RDS(on) () at VGS = 4.5 V
0.0015
ID (A)
200
Configuration
Package
G
S
Single
N-Channel MOSFET
PowerPAK 8 x 8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
40
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C a
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
141
136
IDM
600
IAS
50
EAS
125
TJ, Tstg
Soldering recommendations (peak temperature) d, e
V
200
IS
PD
UNIT
150
50
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
LIMIT
RthJA
50
RthJC
1
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S17-0237-Rev. B, 13-Feb-17
Document Number: 68443
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ100EL
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2
2.5
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
500
VGS = 10 V
VDS 5 V
100
-
-
VGS = 10 V
ID = 20 A
-
0.0009
0.0012
VGS = 4.5 V
ID = 10 A
-
0.0011
0.0015
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.0018
VGS = 10 V
ID = 20 A, TJ = 175 °C
VDS = 15 V, ID = 15 A
-
-
0.0022
-
122
-
-
10 810
14 500
-
6500
8500
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
-
700
950
Total gate charge c
Qg
-
140
220
-
30
-
Gate-source
Gate-drain
charge c
charge c
Gate resistance
Turn-on delay
time c
Rise time c
Turn-off delay time c
Fall time c
Qgs
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 20 V, ID = 10 A
Qgd
Rg
td(off)
nC
-
20
-
f = 1 MHz
0.45
0.99
1.50
-
24
40
VDD = 20 V, RL = 2
ID 10 A, VGEN = 10 V, Rg = 1
-
60
100
-
60
100
-
30
50
-
-
200
A
-
0.8
1.2
V
td(on)
tr
pF
tf
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = 50 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0237-Rev. B, 13-Feb-17
Document Number: 68443
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ100EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
155
10000
10000
120
VGS = 10 V thru 4 V
100
100
31
80
TC = 25 °C
60
40
100
TC = -55 °C
20
0
0
10
0
2
4
6
8
10
10
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
10
Axis Title
0.005
TC = -55 °C
160
TC = 25 °C
1000
1st line
2nd line
120
80
TC = 125 °C
100
40
2nd line
RDS(on) - On-Resistance (Ω)
10000
10000
0.004
1000
0.003
1st line
2nd line
200
2nd line
gfs - Transconductance (S)
1000
TC = 125 °C
1st line
2nd line
VGS = 3 V
62
2nd line
ID - Drain Current (A)
1000
93
1st line
2nd line
2nd line
ID - Drain Current (A)
124
0.002
100
VGS = 4.5 V
0.001
VGS = 10 V
0
0.000
10
0
3
6
9
12
15
18
10
0
20
Transconductance
On-Resistance vs. Drain Current
Axis Title
100
4000
Crss
0
10
16
24
32
40
10000
ID = 10 A
VDS = 20 V
8
1000
6
1st line
2nd line
1st line
2nd line
Coss
2nd line
VGS - Gate-to-Source Voltage (V)
1000
Ciss
12000
8000
4
100
2
0
10
0
30
60
90
120
VDS - Drain-to-Source Voltage (V)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S17-0237-Rev. B, 13-Feb-17
100
10
10000
16000
2nd line
C - Capacitance (pF)
80
ID - Drain Current (A)
2nd line
Axis Title
8
60
ID - Drain Current (A)
2nd line
20000
0
40
150
Document Number: 68443
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ100EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
10000
VGS = 10 V
10
VGS = 4.5 V
1.1
100
0.8
0.5
2nd line
IS - Source Current (A)
1000
1.4
0
25
50
1000
1
TJ = 25 °C
0.1
100
0.01
0.001
10
-50 -25
TJ = 150 °C
10
0
75 100 125 150 175
0.2
0.4
0.6
1.0
1.2
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
0.005
10000
10000
46
100
43
0.004
1000
0.003
1st line
2nd line
1000
49
2nd line
RDS(on) - On-Resistance (Ω)
ID = 1 mA
52
1st line
2nd line
0.002
100
TJ = 150 °C
0.001
TJ = 25 °C
40
0.000
10
-50 -25
0
25
50
75 100 125 150 175
10
0
2
4
6
8
10
TJ - Junction Temperature (°C)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Drain Source Breakdown vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
0.5
IDM limited
1000
10000
10000
100 μs
100
1000
-0.3
1st line
2nd line
ID = 5 mA
-0.7
100
ID = 250 μA
2nd line
ID - Drain Current (A)
0.1
ID limited
1000
1 ms
10 ms
10
Limited by RDS(on) (1)
100 ms, 1 s, 10 s, DC
1
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
0.8
TJ - Junction Temperature (°C)
2nd line
55
2nd line
VGS(th) Variance (V)
1st line
2nd line
ID = 20 A
1.7
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
100
BVDSS limited
0.1
-1.1
TC = 25 °C
Single pulse
-1.5
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
2nd line
Threshold Voltage
S17-0237-Rev. B, 13-Feb-17
0.01
0.01
(1)
0.1
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 68443
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ100EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68443.
S17-0237-Rev. B, 13-Feb-17
Document Number: 68443
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
PowerPAK® 8 x 8L
Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK 8 x 8L package:
OLD ORDERING CODE a
NEW ORDERING CODE
SQJQ100EL
-
SQJQ100EL-T1_GE3
SQJQ402E
SQJQ402E-T1-GE3
SQJQ402E-T1_GE3
SQJQ410EL
-
SQJQ410EL-T1_GE3
SQJQ900E
-
SQJQ900E-T1_GE3
DATASHEET PART NUMBER
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 01-Jul-16
Document Number: 67144
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 8 x 8L Case Outline
W1
b2
E1
E
W
E2
E3
W3
W2
D2
θ
L
A1
e
θ1
0.25 gauge line
Bottom view (single)
D3
K
D3
E1
E
E2
E3
W3
W2
W1
b2
K
A
Top view (single)
C
D1
D
A3
b1
F
b
L1
D4
D4
b
b1
D1
D
e
Bottom view (dual)
Top view (dual)
DIM.
MILLIMETERS
INCHES
A
A1
A3
b
b1
b2
c
D
D1
D2
D3
D4
MIN.
1.70
0.00
0.55
0.92
1.02
7.80
0.20
8.00
7.80
6.70
2.85
6.11
NOM.
1.80
0.08
0.62
1.00
1.10
7.90
0.25
8.10
7.90
6.80
2.95
6.21
MAX.
1.90
0.13
0.70
1.08
1.18
8.00
0.30
8.25
8.00
6.90
3.05
6.31
MIN.
0.067
0.000
0.022
0.036
0.040
0.307
0.008
0.315
0.307
0.264
0.112
0.241
NOM.
0.071
0.003
0.024
0.039
0.043
0.311
0.010
0.319
0.311
0.268
0.116
0.244
MAX.
0.075
0.005
0.028
0.043
0.046
0.315
0.012
0.325
0.315
0.272
0.120
0.248
e
1.95
7.90
6.12
3.94
4.69
0.05
0.62
0.92
0.80
0.30
0.30
4.39
4.54
6°
0°
2.00
8.00
6.22
4.04
4.79
0.10
0.72
1.07
0.90
0.40
0.40
4.49
4.64
10°
3°
2.05
8.10
6.32
4.14
4.89
0.15
0.82
1.22
1.00
0.50
0.50
4.59
4.74
14°
8°
0.077
E
E1
E2
E3
F
L
L1
K
W
W1
W2
W3
θ
θ1
0.079
0.315
0.245
0.159
0.189
0.004
0.028
0.042
0.035
0.016
0.016
0.177
0.183
10°
3°
0.081
0.319
0.249
0.163
0.193
0.006
0.032
0.048
0.039
0.020
0.020
0.181
0.187
14°
8°
0.311
0.241
0.140
0.185
0.002
0.024
0.036
0.031
0.012
0.012
0.173
0.179
6°
0°
C14-0891-Rev. A, 06-Oct-14
DWG: 6026
Revision: 06-Oct-14
Document Number: 67734
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
Recommended Minimum PADs for PowerPAK® 8 x 8L Single
8.00
(0.31)
0.50
(0.02)
4.05
(0.16)
3.55
(0.14)
Y
3.99
(0.16)
4.59
(0.18)
6.90
(0.27)
(0, 0)
0.44
(0.02)
X
0.54
(0.02)
0.85
(0.03)
6.11
(0.24)
1.29
(0.05)
1.94
(0.08)
8.25
(0.32)
3.23
(0.13)
0.82
(0.03)
2.47
(0.10)
3.62
(0.14)
4.05
(0.16)
2.03
(0.08)
1.15
(0.05)
0.88
(0.03)
Dimensions in millimeters (inches)
Note
• Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue.
Revision: 08-Apr-15
1
Document Number: 67477
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
1
Document Number: 91000
