SQJQ906E-T1_GE3

SQJQ906E www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® 8 x 8L Dual • TrenchFET® power MOSFET • AEC-Q101 qualified D1 • 100 % Rg and UIS tested • Fully lead (Pb)-free device D2 8 m m m 1 m 8.1 Top View 4 G2 3 S2 2 S1 1 G1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 Bottom View D2 PRODUCT SUMMARY VDS (V) 40 RDS(on) (:) at VGS = 10 V ID (A) per leg 95 Configuration Dual Package G1 0.0033 G2 S1 PowerPAK 8 x 8L S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 55 45 IDM 300 IAS 36 EAS 64 TJ, Tstg Soldering recommendations (peak temperature) d, e V 95 IS PD UNIT 50 17 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 100 RthJC 3 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width d 300 μs, duty cycle d 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S17-0236-Rev. A, 13-Feb-17 Document Number: 76462 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ906E www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3 3.5 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 Zero gate voltage drain current IDSS Gate-source threshold voltage On-state drain current a Drain-source on-state resistance a Forward Transconductance b Dynamic ID(on) RDS(on) gfs V VGS = 0 V VDS = 20 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 VGS = 10 V VDS t 5 V 40 - - VGS = 10 V ID = 5 A - 0.0027 0.0033 VGS = 10 V ID = 5 A, TJ = 125 °C - - 0.0048 VGS = 10 V ID = 5 A, TJ = 175 °C - - 0.0056 - 75 - - 2880 3600 - 1635 2045 VDS = 15 V, ID = 15 A nA μA A : S b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss - 85 105 Total gate charge c Qg - 34 42 Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Rg Turn-on delay time c Rise time c Turn-off delay Fall time c VDS = 20 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 10 A f = 1 MHz td(on) tr time c VGS = 0 V td(off) VDD = 20 V, RL = 2 : ID # 10 A, VGEN = 10 V, Rg = 1 : tf pF - 11 - - 4 - nC 0.7 1.1 1.9 - 14 19 - 4 6 - 26 35 - 4 6 - - 600 A - 1 1.2 V : ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD IF = 40 A, VGS = 0 Notes a. Pulse test; pulse width d 300 μs, duty cycle d 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0236-Rev. A, 13-Feb-17 Document Number: 76462 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ906E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 150 100 10000 10000 VGS = 10 V thru 5 V 80 100 VGS = 4 V 30 1000 60 1st line 2nd line 60 2nd line ID - Drain Current (A) 1000 90 1st line 2nd line 40 100 TC = 25 °C 20 TC = -55 °C TC = 125 °C 0 0 10 0 6 12 18 24 10 0 30 2 4 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title TC = 25 °C 100 2 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line 2nd line ID - Drain Current (A) 1000 6 0.008 1000 0.006 VGS = 6 V 0.004 100 0.002 VGS = 10 V TC = -55 °C 0 0.000 10 2 10000 0.010 8 TC = 125 °C 4 6 8 10 0 10 20 40 60 80 100 120 VGS - Gate-to-Source Voltage (V) 2nd line ID - Drain Current (A) 2nd line Transfer Characteristics On-Resistance vs. Drain Current Axis Title Axis Title 150 5000 10000 10000 4000 1000 90 60 TC = 125 °C 100 30 1000 Ciss 3000 1st line 2nd line TC = -55 °C TC = 25 °C 2nd line C - Capacitance (pF) 120 1st line 2nd line 2nd line gfs - Transconductance (S) 10 Axis Title 10000 0 8 VDS - Drain-to-Source Voltage (V) 2nd line 10 4 6 1st line 2nd line 2nd line ID - Drain Current (A) 120 2000 Coss 100 1000 Crss 0 10 0 7 14 21 28 0 10 0 8 16 24 32 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line Transconductance Capacitance S17-0236-Rev. A, 13-Feb-17 40 Document Number: 76462 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ906E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 20 A 10 1000 1.4 VGS = 6 V 1.1 100 0.8 0.5 0 25 50 0.1 100 0.01 0.001 10 -50 -25 75 100 125 150 175 10 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.025 10000 10000 1.0 0.5 1000 0.015 0.010 100 TJ = 150 °C 0.005 ID = 5 mA 0 1000 1st line 2nd line 2nd line VGS(th) Variance (V) 0.020 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1000 TJ = 25 °C TJ = 150 °C 1 1st line 2nd line VGS = 10 V 2nd line IS - Source Current (A) 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 -0.5 100 -1.0 ID = 250 μA -1.5 TJ = 25 °C 0.000 -2.0 10 0 2 4 6 8 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 10000 ID = 1 mA 52 1000 49 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 55 46 100 43 40 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature S17-0236-Rev. A, 13-Feb-17 Document Number: 76462 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ906E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 ID - Drain Current (A) 100 IDM Limited 1 ms 10 1 0.1 0.01 0.01 10 ms, 100ms 1 s, 10 s, DC Limited by RDS(on)* TC = 25 °C Single Pulse BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S17-0236-Rev. A, 13-Feb-17 Document Number: 76462 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ906E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.02 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.                                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76462. S17-0236-Rev. A, 13-Feb-17 Document Number: 76462 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000