SQJQ910EL-T1_GE3

SQJQ910EL www.vishay.com Vishay Siliconix Automotive Dual N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PowerPAK® 8 x 8L Dual • TrenchFET® power MOSFET • AEC-Q101 qualified D1 • 100 % Rg and UIS tested • Fully lead (Pb)-free device D2 8 m m m 1 m 8.1 Top View 4 G2 3 S2 2 S1 1 G1 • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 D1 Bottom View D2 PRODUCT SUMMARY VDS (V) 100 RDS(on) () at VGS = 10 V 0.0086 RDS(on) () at VGS = 4.5 V 0.0114 ID (A) per leg 70 Configuration Dual Package G1 G2 S1 PowerPAK 8 x 8L S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 100 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 40 100 IDM 280 IAS 42 PD TJ, Tstg Soldering recommendations (peak temperature) d, e V 70 IS EAS UNIT 88 187 62 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 85 RthJC 2 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S17-0464-Rev. A, 03-Apr-17 Document Number: 76026 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ910EL www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2 2.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward Transconductance b IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 20 V - - 1 VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 100 V, TJ = 175 °C - - 150 VGS = 10 V VDS  5 V 40 - - VGS = 10 V ID = 10 A - 0.0072 0.0086 VGS = 4.5 V ID = 10 A - 0.0095 0.0114 VGS = 10 V ID = 5 A, TJ = 125 °C - - 0.0110 VGS = 10 V ID = 5 A, TJ = 175 °C VDS = 15 V, ID = 10 A - - 0.0187 - 52 - V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VDS = 50 V, f = 1 MHz VGS = 10 V VDS = 50 V, ID = 10 A f = 1 MHz td(on) tr td(off) VDD = 40 V, RL = 4  ID  10 A, VGEN = 10 V, Rg = 1  tf Source-Drain Diode Ratings and Characteristics - 2266 2832 - 799 1000 - 34 43 - 46 58 - 7 - - 10 - 1.1 1.9 3.0 - 11 14 pF nC  - 4 5 - 33 42 - 7 8 - - 280 A - 1 1.2 V ns b Pulsed current a ISM Forward voltage VSD IF = 40 A, VGS = 0 Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0464-Rev. A, 03-Apr-17 Document Number: 76026 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ910EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 150 10 10000 60 100 VGS = 3 V 1000 6 1st line 2nd line 1000 90 2nd line ID - Drain Current (A) 8 VGS = 10 V thru 4 V 1st line 2nd line 4 TC = 25 °C 100 2 30 TC = 125 °C 0 0 6 12 18 24 10 0 30 1 2 Output Characteristics Transfer Characteristics Axis Title 40 100 TC = 25 °C 20 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line 2nd line ID - Drain Current (A) 1000 60 TC = 125 °C 0.020 1000 0.015 VGS = 4.5 V 0.010 100 0.005 VGS = 10 V 0.000 10 2 10000 TC = -55 °C 0 1 3 4 10 0 5 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) 2nd line ID - Drain Current (A) 2nd line Transfer Characteristics On-Resistance vs. Drain Current 10 80 TC = 25 °C 1000 1st line 2nd line 60 40 100 TC = 125 °C 20 0 10 15 20 25 10000 ID = 10 A VDS = 50 V 8 1000 6 1st line 2nd line TC = -55 °C 2nd line VGS - Gate-to-Source Voltage (V) 10000 10 4 100 2 0 10 0 12 24 36 48 ID - Drain Current (A) 2nd line Qg - Total Gate Charge (nC) 2nd line Transconductance Capacitance S17-0464-Rev. A, 03-Apr-17 120 Axis Title Axis Title 100 5 5 0.025 10000 80 2nd line gfs - Transconductance (S) 4 VGS - Gate-to-Source Voltage (V) 2nd line Axis Title 0 3 VDS - Drain-to-Source Voltage (V) 2nd line 100 0 TC = -55 °C 0 10 1st line 2nd line 2nd line ID - Drain Current (A) 120 10000 60 Document Number: 76026 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ910EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 5000 100 10000 10 1st line 2nd line Ciss 2000 100 Coss 1000 1000 TJ = 25 °C TJ = 150 °C 1 1st line 2nd line 1000 3000 2nd line IS - Source Current (A) 4000 2nd line C - Capacitance (pF) 10000 0.1 100 0.01 Crss 0 0.001 10 0 25 50 75 10 0 100 0.2 0.4 1.0 1.2 VSD - Source-to-Drain Voltage (V) 2nd line Capacitance Source Drain Diode Forward Voltage Axis Title Axis Title 0.5 10000 ID = 20 A 10000 VGS = 10 V 0.1 1.3 100 VGS = 4.5 V 0.9 ID = 5 mA 1000 -0.3 1st line 2nd line 1000 1.7 2nd line VGS(th) Variance (V) 2.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 0.8 VDS - Drain-to-Source Voltage (V) 2nd line 2.5 -0.7 100 ID = 250 μA -1.1 0.5 -1.5 10 -50 -25 0 25 50 75 100 125 150 175 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Junction Temperature Threshold Voltage Axis Title Axis Title 125 0.04 1000 1st line 2nd line 0.03 0.02 TJ = 150 °C 100 0.01 TJ = 25 °C 0.00 10 0 2 4 6 8 10 2nd line VDS - Drain-to-Source Voltage (V) 10000 10000 ID = 1 mA 121 1000 117 1st line 2nd line 0.05 2nd line RDS(on) - On-Resistance (Ω) 0.6 113 100 109 105 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Junction Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature S17-0464-Rev. A, 03-Apr-17 Document Number: 76026 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ910EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 ID - Drain Current (A) 100 IDM limited 1 ms 10 ms 100 ms, 1 s, 10 s, DC 10 Limited by RDS(on) (1) 1 BVDSS limited 0.1 TC = 25 °C single pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) (1) V GS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S17-0464-Rev. A, 03-Apr-17 Document Number: 76026 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ910EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.02 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions                                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76026. S17-0464-Rev. A, 03-Apr-17 Document Number: 76026 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 8 x 8L Case Outline D2 E5 L1 D3 K D3 D7 D5 D5 D7 D5 E1 E W3 W2 W1 D5 E2 E3 b2 K F Bottom view (single) 0.25 Gauge line Top view (single) E5 L θ e W4 D1 D E4 E1 E b1 D5 D4 A2 A1 b D6 E2 E3 W4 D6 W W3 W2 W1 D5 E4 b2 D4 b b1 D1 D e Bottom view (dual) DIM. A C A3 Top view (dual) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 1.70 1.80 1.90 0.067 0.071 MAX. 0.075 A1 0.00 0.08 0.13 0.000 0.003 0.005 A2 0.25 0.30 0.35 0.010 0.012 0.014 A3 0.55 0.62 0.70 0.022 0.024 0.028 b 0.92 1.00 1.08 0.036 0.039 0.043 b1 1.02 1.10 1.18 0.040 0.043 0.046 b2 7.80 7.90 8.00 0.307 0.311 0.315 c 0.20 0.25 0.30 0.008 0.010 0.012 D 8.00 8.10 8.25 0.315 0.319 0.325 D1 7.80 7.90 8.00 0.307 0.311 0.315 D2 6.70 6.80 6.90 0.264 0.268 0.272 D3 2.85 2.95 3.05 0.112 0.116 0.120 D4 6.11 6.21 6.31 0.241 0.244 0.248 D5 0.37 0.47 0.57 0.015 0.019 0.022 D6 2.49 2.59 2.69 0.098 0.102 0.106 D7 1.76 1.86 1.96 0.069 0.073 0.077 Revision: 16-Oct-17 Document Number: 67734 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. e 1.95 2.00 2.05 0.077 0.079 0.081 E 7.90 8.00 8.10 0.311 0.315 0.319 E1 6.12 6.22 6.32 0.241 0.245 0.249 E2 3.94 4.04 4.14 0.140 0.159 0.163 E3 4.69 4.79 4.89 0.185 0.189 0.193 E4 3.23 3.33 3.43 0.127 0.131 0.135 E5 0.65 0.75 0.85 0.026 0.030 0.033 F 0.00 0.10 0.15 0.000 0.004 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.80 0.90 1.00 0.031 0.035 0.039 W 0.30 0.40 0.50 0.012 0.016 0.020 W1 0.30 0.40 0.50 0.012 0.016 0.020 W2 4.39 4.49 4.59 0.173 0.177 0.181 W3 4.54 4.64 4.74 0.179 0.183 0.187 W4 0.32 0.37 0.42 0.013 0.015 0.017  6° 10° 14° 6° 10° 14° C17-1388-Rev. B, 16-Oct-17 DWG: 6026 Revision: 16-Oct-17 Document Number: 67734 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for PowerPAK® 8 x 8L Dual 8.00 (0.31) 0.50 (0.02) 4.05 (0.16) 3.55 (0.14) 6.90 (0.27) 3.05 (0.12) 3.99 (0.16) 3.05 (0.12) (0, 0) 0.44 (0.02) 4.59 (0.18) Y 0.80 (0.03) X 0.54 (0.02) 0.85 (0.03) 6.11 (0.24) 1.29 (0.05) 1.94 (0.08) 8.25 (0.32) 3.23 (0.13) 0.82 (0.03) 2.47 (0.10) 3.62 (0.14) 4.05 (0.16) 2.03 (0.08) 1.15 (0.05) 0.88 (0.03) Dimensions in millimeters (inches) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 08-Apr-15 1 Document Number: 67489 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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