SQJQ960EL
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Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® 8 x 8L Dual
• TrenchFET® power MOSFET
• AEC-Q101 qualified
D1
• 100 % Rg and UIS tested
• Fully lead (Pb)-free device
D2
8
m
m
m
1
m
8.1
Top View
4
G2
3
S2
2
S1
1
G1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D1
Bottom View
D2
PRODUCT SUMMARY
VDS (V)
60
RDS(on) () at VGS = 10 V
0.009
RDS(on) () at VGS = 4.5 V
0.013
ID (A) per leg
63
Configuration
Dual
Package
G1
G2
S1
PowerPAK 8 x 8L
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
60
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C a
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
63
IS
50
200
IAS
26
EAS
34
TJ, Tstg
Soldering recommendations (peak temperature) d, e
V
36
IDM
PD
UNIT
71
24
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
SYMBOL
PCB
mount c
LIMIT
RthJA
75
RthJC
2.1
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S17-0463-Rev. A, 27-Mar-17
Document Number: 76020
1
For technical questions, contact: automostechsupport@vishay.com
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
VDS
VGS = 0, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 20 V
-
-
1
VGS = 0 V
VDS = 60 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS 5 V
40
-
-
VGS = 10 V
ID = 10 A
-
0.0070
0.0090
VGS = 4.5 V
ID = 7 A
-
0.0092
0.0130
VGS = 10 V
ID = 10 A, TJ = 125 °C
-
-
0.0145
VGS = 10 V
ID = 10 A, TJ = 175 °C
VDS = 15 V, ID = 10 A
-
-
0.0180
-
55
1950
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
Rg
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 30 V, ID = 10 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 30 V, RL = 4
ID 10 A, VGEN = 10 V, Rg = 1
tf
Source-Drain Diode Ratings and Characteristics
-
1560
-
771
964
-
87
108
-
19
24
-
4
-
-
2
-
0.98
1.6
2.6
-
10
14
pF
nC
-
3
5
-
22
28
-
3
5
-
-
200
A
-
1
1.2
V
ns
b
Pulsed current a
ISM
Forward voltage
VSD
IF = 20 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0463-Rev. A, 27-Mar-17
Document Number: 76020
2
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
150
10000
10000
1.2
VGS = 10 V thru 5 V
1.0
60
100
30
1000
0.8
1st line
2nd line
VGS = 4 V
2nd line
ID - Drain Current (A)
1000
90
1st line
2nd line
0.6
TC = 25 °C
0.4
100
0.2
TC = -55 °C
TC = 125 °C
0
10
0
6
12
18
24
0.0
10
0
30
1
2
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
0.025
1000
60
1st line
2nd line
2nd line
ID - Drain Current (A)
80
40
100
TC = 25 °C
20
2nd line
RDS(on) - On-Resistance (Ω)
10000
TC = 125 °C
0.020
1000
0.015
VGS = 4.5 V
0.010
100
0.005
VGS = 10 V
0.000
10
2
10000
TC = -55 °C
0
1
3
4
10
0
5
20
40
80
100
ID - Drain Current (A)
2nd line
Transfer Characteristics
On-Resistance vs. Drain Current
Axis Title
10
TC = 25 °C
1000
1st line
2nd line
75
TC = 125 °C
100
25
0
10
12
18
24
30
10000
ID = 10 A
VDS = 30 V
8
1000
6
1st line
2nd line
TC = -55 °C
100
2nd line
VGS - Gate-to-Source Voltage (V)
10000
50
4
100
2
0
10
0
5
10
15
20
ID - Drain Current (A)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Transconductance
Gate Charge
S17-0463-Rev. A, 27-Mar-17
120
Axis Title
125
2nd line
gfs - Transconductance (S)
60
VGS - Gate-to-Source Voltage (V)
2nd line
6
5
Axis Title
Axis Title
0
4
VDS - Drain-to-Source Voltage (V)
2nd line
100
0
3
1st line
2nd line
2nd line
ID - Drain Current (A)
120
25
Document Number: 76020
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
2000
Ciss
10000
10
1st line
2nd line
Coss
800
100
400
1000
TJ = 25 °C
TJ = 150 °C
1
1st line
2nd line
1000
1200
2nd line
IS - Source Current (A)
1600
2nd line
C - Capacitance (pF)
100
10000
0.1
100
0.01
Crss
0
0.001
10
0
12
24
36
48
10
0
60
0.2
0.4
1.0
1.2
VSD - Source-to-Drain Voltage (V)
2nd line
Capacitance
Source Drain Diode Forward Voltage
Axis Title
Axis Title
0.5
10000
ID = 20 A
10000
VGS = 10 V
1.7
VGS = 4.5 V
1.1
100
0.8
ID = 5 mA
1000
-0.3
1st line
2nd line
1000
1.4
2nd line
VGS(th) Variance (V)
0.1
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
0.8
VDS - Drain-to-Source Voltage (V)
2nd line
2.0
-0.7
100
ID = 250 μA
-1.1
0.5
-1.5
10
-50 -25
0
25
50
75 100 125 150 175
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Threshold Voltage
Axis Title
Axis Title
75
0.04
1000
1st line
2nd line
0.03
0.02
TJ = 150 °C
100
0.01
TJ = 25 °C
0.00
10
0
2
4
6
8
10
2nd line
VDS - Drain-to-Source Voltage (V)
10000
10000
ID = 1 mA
73
1000
71
1st line
2nd line
0.05
2nd line
RDS(on) - On-Resistance (Ω)
0.6
69
100
67
65
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
2nd line
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
S17-0463-Rev. A, 27-Mar-17
Document Number: 76020
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJQ960EL
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM limited
ID - Drain Current (A)
100
1 ms
10 ms
100 ms
10
Limited by R DS(on) *
1
0.1
BVDSS limited
TC = 25 °C
Single pulse
0.01
0.01
1 s, 10 s, DC
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S17-0463-Rev. A, 27-Mar-17
Document Number: 76020
5
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
Single pulse
0.02
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76020.
S17-0463-Rev. A, 27-Mar-17
Document Number: 76020
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 8 x 8L Case Outline
D2
E5
L1
D3
K
D3
D7 D5 D5 D7
D5
E1
E
W3
W2
W1
D5
E2
E3
b2
K
F
Bottom view (single)
0.25 Gauge line
Top view (single)
E5
L
θ
e
W4
D1
D
E4
E1
E
b1
D5
D4
A2
A1
b
D6
E2
E3
W4
D6
W
W3
W2
W1
D5
E4
b2
D4
b
b1
D1
D
e
Bottom view (dual)
DIM.
A
C
A3
Top view (dual)
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
A
1.70
1.80
1.90
0.067
0.071
MAX.
0.075
A1
0.00
0.08
0.13
0.000
0.003
0.005
A2
0.25
0.30
0.35
0.010
0.012
0.014
A3
0.55
0.62
0.70
0.022
0.024
0.028
b
0.92
1.00
1.08
0.036
0.039
0.043
b1
1.02
1.10
1.18
0.040
0.043
0.046
b2
7.80
7.90
8.00
0.307
0.311
0.315
c
0.20
0.25
0.30
0.008
0.010
0.012
D
8.00
8.10
8.25
0.315
0.319
0.325
D1
7.80
7.90
8.00
0.307
0.311
0.315
D2
6.70
6.80
6.90
0.264
0.268
0.272
D3
2.85
2.95
3.05
0.112
0.116
0.120
D4
6.11
6.21
6.31
0.241
0.244
0.248
D5
0.37
0.47
0.57
0.015
0.019
0.022
D6
2.49
2.59
2.69
0.098
0.102
0.106
D7
1.76
1.86
1.96
0.069
0.073
0.077
Revision: 16-Oct-17
Document Number: 67734
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
e
1.95
2.00
2.05
0.077
0.079
0.081
E
7.90
8.00
8.10
0.311
0.315
0.319
E1
6.12
6.22
6.32
0.241
0.245
0.249
E2
3.94
4.04
4.14
0.140
0.159
0.163
E3
4.69
4.79
4.89
0.185
0.189
0.193
E4
3.23
3.33
3.43
0.127
0.131
0.135
E5
0.65
0.75
0.85
0.026
0.030
0.033
F
0.00
0.10
0.15
0.000
0.004
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.80
0.90
1.00
0.031
0.035
0.039
W
0.30
0.40
0.50
0.012
0.016
0.020
W1
0.30
0.40
0.50
0.012
0.016
0.020
W2
4.39
4.49
4.59
0.173
0.177
0.181
W3
4.54
4.64
4.74
0.179
0.183
0.187
W4
0.32
0.37
0.42
0.013
0.015
0.017
6°
10°
14°
6°
10°
14°
C17-1388-Rev. B, 16-Oct-17
DWG: 6026
Revision: 16-Oct-17
Document Number: 67734
2
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
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Vishay Siliconix
Recommended Minimum PADs for PowerPAK® 8 x 8L Dual
8.00
(0.31)
0.50
(0.02)
4.05
(0.16)
3.55
(0.14)
6.90
(0.27)
3.05
(0.12)
3.99
(0.16)
3.05
(0.12)
(0, 0)
0.44
(0.02)
4.59
(0.18)
Y
0.80
(0.03)
X
0.54
(0.02)
0.85
(0.03)
6.11
(0.24)
1.29
(0.05)
1.94
(0.08)
8.25
(0.32)
3.23
(0.13)
0.82
(0.03)
2.47
(0.10)
3.62
(0.14)
4.05
(0.16)
2.03
(0.08)
1.15
(0.05)
0.88
(0.03)
Dimensions in millimeters (inches)
Note
• Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue.
Revision: 08-Apr-15
1
Document Number: 67489
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 09-Jul-2021
1
Document Number: 91000
