SQM100N04-2m7
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Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
40
RDS(on) (Ω) at VGS = 10 V
• Package with low thermal resistance
0.0027
ID (A)
• 100 % Rg and UIS tested
100
Configuration
• AEC-Q101 qualified d
Single
Package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-263
TO-263
D
G
S
D
Top View
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
TC = 25 °C a
Continuous Drain Current
Continuous Source Current (Diode Conduction)
TC = 125 °C
a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
100
98
IS
100
IDM
400
IAS
70
EAS
245
PD
UNIT
157
52
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
40
RthJC
0.95
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
S15-1874-Rev. B, 10-Aug-15
Document Number: 62769
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SQM100N04-2m7
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
VDS
VGS = 0, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3.0
3.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
250
-
-
VGS = 10 V
VDS ≥ 5 V
120
VGS = 10 V
ID = 30 A
-
VGS = 10 V
ID = 30 A, TJ = 125 °C
-
-
0.00440
VGS = 10 V
ID = 30 A, TJ = 175 °C
-
-
0.00540
-
201
-
gfs
VDS = 15 V, ID = 30 A
V
nA
μA
A
0.00225 0.00270
Ω
S
Dynamic b
-
6325
7910
-
744
930
Crss
-
314
395
Qg
-
95.5
145
-
25.5
-
-
14.7
-
0.7
1.48
3.8
-
14
21
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge
c
Gate-Drain Charge c
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
Qgs
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 20 V, ID = 100 A
Qgd
Rg
f = 1 MHz
td(on)
tr
td(off)
VDD = 20 V, RL = 0.2 Ω
ID ≅ 100 A, VGEN = 10 V, Rg = 1 Ω
tf
pF
nC
Ω
-
11
17
-
48
72
-
9
14
-
-
400
A
-
0.8
1.5
V
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = 30 A, VGS = 0
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1874-Rev. B, 10-Aug-15
Document Number: 62769
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM100N04-2m7
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
160
120
V GS = 10 V thru 5 V
100
ID - Drain Current (A)
ID - Drain Current (A)
120
80
80
60
40
40
T C = 25 °C
20
T C = 125 °C
V GS = 4 V
0
T C = -55 °C
0
0
3
6
9
12
15
VDS - Drain-to-Source Voltage (V)
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
400
10
0.005
TC = -55 °C
0.004
TC = 25 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
320
240
TC = 125 °C
160
0.003
VGS = 10 V
0.002
0.001
80
0.000
0
0
14
28
42
ID - Drain Current (A)
56
0
70
40
60
80
100
120
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
10
8000
7000
ID = 100 A
VGS - Gate-to-Source Voltage (V)
Ciss
6000
C - Capacitance (pF)
20
5000
4000
3000
2000
Coss
8
V DS = 20 V
6
4
2
1000
Crss
0
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
S15-1874-Rev. B, 10-Aug-15
35
40
0
20
40
60
80
100
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 62769
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM100N04-2m7
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 30 A
10
1.7
V GS = 10 V
1.4
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.0
V GS = 6 V
1.1
T J = 150 °C
1
T J = 25 °C
0.1
0.01
0.8
0.5
-50
0.001
-25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
0
175
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
0.010
0.7
0.008
0.2
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
On-Resistance vs. Junction Temperature
0.2
0.006
T J = 150 °C
0.004
-0.3
ID = 5 mA
-0.8
T J = 25 °C
ID = 250 μA
-1.3
0.002
-1.8
-50
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
-25
0
On-Resistance vs. Gate-to-Source Voltage
25
50
75 100
TJ - Temperature (°C)
125
150
175
Threshold Voltage
54
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
52
50
48
46
44
42
-50
-25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S15-1874-Rev. B, 10-Aug-15
Document Number: 62769
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM100N04-2m7
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
ID - Drain Current (A)
100
100 μs
IDM Limited
ID Limited
10
1 ms
10 ms, 100 ms, 1 s, 10 s, DC
Limited by RDS(on)*
1
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-1874-Rev. B, 10-Aug-15
Document Number: 62769
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM100N04-2m7
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
The rmal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62769.
S15-1874-Rev. B, 10-Aug-15
Document Number: 62769
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM100N04-2m7
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REVISION HISTORY
REVISION
B
a
DATE
04-Aug-15
Vishay Siliconix
DESCRIPTION OF CHANGE
• Revised Rg minimum limit
Note
a. As of April 2014
S15-1874-Rev. B, 10-Aug-15
Document Number: 62769
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2022
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Document Number: 91000
