SQM10250E
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Vishay Siliconix
Automotive N-Channel 250 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
TO-263
• Package with low thermal resistance
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
D
Top View
G
D
PRODUCT SUMMARY
VDS (V)
G
250
RDS(on) () at VGS = 10 V
0.0300
RDS(on) () at VGS = 7.5 V
0.0320
ID (A)
N-Channel MOSFET
65
Configuration
S
Single
Package
TO-263
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
250
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
ID
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current
b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
Operating junction and storage temperature range
65
120
IDM
180
IAS
41
PD
TC = 125 °C
V
37
IS
EAS
UNIT
84
375
125
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount
c
RthJA
40
RthJC
0.4
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
S18-0341-Rev. A, 26-Mar-18
Document Number: 75035
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM10250E
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 V, ID = 250 μA
250
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3.0
3.5
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
Dynamic
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 250 V
-
-
1
VGS = 0 V
VDS = 250 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 250 V, TJ = 175 °C
-
-
600
VGS = 10 V
VDS 5 V
30
-
-
VGS = 10 V
ID = 15 A
-
0.0244
0.0300
VGS = 7.5 V
ID = 10 A
-
0.0260
0.0320
VGS = 10 V
ID = 15 A, TJ = 125 °C
-
-
0.0650
VGS = 10 V
ID = 15 A, TJ = 175 °C
-
-
0.0868
-
50
-
VDS = 15 V, ID = 15 A
V
nA
μA
A
S
b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate Resistance
Rg
Turn-on delay time
c
Rise time c
Turn-off delay time c
Fall time c
-
2880
4050
-
1480
2100
-
58
85
-
50
75
-
12
-
-
15
-
f = 1 MHz
1.40
2.84
4.40
-
14
30
VDD = 125 V, RL = 12.5
ID 10 A, VGEN = 10 V, Rg = 1
-
6
15
-
38
60
-
10
20
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 125 V, ID = 10 A
td(on)
tr
td(off)
tf
pF
nC
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
Body diode reverse recovery time
trr
IF = 20 A, VGS = 0 V
-
-
180
-
0.82
1.5
V
-
155
260
ns
-
933
1400
nC
-
122
-
ns
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
33
-
IRM(REC)
-
-11.6
-
Body diode peak reverse recovery
current
IF = 10 A, di/dt = 100 A/μs
A
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0341-Rev. A, 26-Mar-18
Document Number: 75035
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM10250E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
200
10000
10000
120
VGS = 10 V thru 8 V
VGS = 6 V
80
100
VGS = 5 V
1000
72
1st line
2nd line
1000
120
2nd line
ID - Drain Current (A)
96
VGS = 7 V
1st line
2nd line
2nd line
ID - Drain Current (A)
160
TC = 25 °C
48
100
24
40
TC = 125 °C
VGS = 4 V
TC = -55 °C
0
0
10
0
2
4
6
8
10
0
10
2
4
6
8
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
90
10
0.050
10000
1000
54
TC = 125 °C
36
100
18
0
2nd line
RDS(on) - On-Resistance (Ω)
TC = 25 °C
72
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = -55 °C
10
20
30
40
VGS =7.5 V
0.030
0.020
VGS = 10 V
0.010
0.000
10
0
0.040
0
50
12
24
ID - Drain Current (A)
2nd line
Axis Title
10
Ciss
2600
100
Crss
1300
Coss
0
10
150
200
250
10000
ID = 10 A
VDS = 125 V
8
1000
6
1st line
2nd line
1000
3900
1st line
2nd line
2nd line
C - Capacitance (pF)
5200
2nd line
VGS - Gate-to-Source Voltage (V)
10000
100
4
100
2
0
10
0
12
24
36
48
VDS - Drain-to-Source Voltage (V)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S18-0341-Rev. A, 26-Mar-18
60
Axis Title
6500
50
48
On-Resistance vs. Drain Current
Transconductance
0
36
ID - Drain Current (A)
2nd line
60
Document Number: 75035
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM10250E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
ID = 15 A
2nd line
IS - Source Current (A)
VGS = 10 V
1000
2.1
VGS = 7.5 V
1.4
100
0.7
0
25
50
TJ = 150 °C
1000
1
100
0.1
TJ = 25 °C
0.01
10
-50 -25
10
1st line
2nd line
2.8
0
75 100 125 150 175
10
0
0.2
0.5
0.7
1.0
1.2
TJ - Junction Temperature (°C)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
0.150
0.7
10000
0.2
2nd line
VGS(th) Variance (V)
0.120
1000
0.090
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
10000
100
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
3.5
TJ = 125°C
0.060
100
-0.3
ID = 5 mA
-0.8
ID = 250 μA
-1.3
0.030
TJ = 25 °C
0.000
-1.8
10
0
2
4
6
8
-50 -25
10
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
ID = 1 mA
310
298
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
322
286
274
262
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S18-0341-Rev. A, 26-Mar-18
Document Number: 75035
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM10250E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1000
10000
IDM limited
100 μs 1000
10
1st line
2nd line
2nd line
ID - Drain Current (A)
100
1 ms
10 ms
100 ms, 1 s, 10 s, DC
1
Limited by RDS(on) (1)
100
0.1
TC = 25 °C
Single pulse
0.01
0.01
(1)
BVDSS limited
0.1
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S18-0341-Rev. A, 26-Mar-18
Document Number: 75035
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM10250E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75035
S18-0341-Rev. A, 26-Mar-18
Document Number: 75035
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 09-Jul-2021
1
Document Number: 91000
