SQM110P04-04L
www.vishay.com
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
- 40
RDS(on) () at VGS = - 10 V
0.0040
RDS(on) () at VGS = - 4.5 V
0.0060
ID (A)
- 120
Configuration
Single
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
S
TO-263
• Compliant to RoHS Directive 2002/95/EC
G
G
D S
Top View
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-263
Lead (Pb)-free and Halogen-free
SQM110P04-04L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 40
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Currenta
Continuous Source Current (Diode
ID
TC = 125 °C
Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
Operating Junction and Storage Temperature Range
V
- 120
- 120
IS
- 120
IDM
- 330
IAS
- 80
EAS
320
PD
TC = 125 °C
UNIT
375
125
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB
Mountc
Junction-to-Case (Drain)
RthJA
40
RthJC
0.40
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S11-2035-Rev. C, 17-Oct-11
1
Document Number: 65268
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM110P04-04L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
- 40
-
-
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS = ± 20 V
-
-
± 100
-
-
- 1.0
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
VGS = 0, ID = - 250 μA
VDS = VGS, ID = - 250 μA
IGSS
Zero Gate Voltage Drain Current
Transconductanceb
VDS
VGS(th)
RDS(on)
gfs
VGS = 0 V
VDS = - 40 V
VGS = 0 V
VDS = - 40 V, TJ = 125 °C
-
-
- 50
VGS = 0 V
VDS = - 40 V, TJ = 175 °C
-
-
- 250
VGS = - 10 V
VDS- 5 V
- 120
-
-
VGS = - 10 V
ID = - 30 A
-
0.0034
0.0040
VGS = - 10 V
ID = - 30 A, TJ = 125 °C
-
-
0.0059
VGS = - 10 V
ID = - 30 A, TJ = 175 °C
-
-
0.0070
VGS = - 4.5 V
ID = - 20 A
-
0.0050
0.0060
-
97
-
-
11 183
13 980
-
1614
2020
-
1294
1620
-
220
330
-
34
-
-
56
-
1.2
2.5
3.7
-
17
26
VDS = - 15 V, ID = - 30 A
V
nA
μA
A
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
VGS = 0 V
VGS = - 10 V
VDS = - 20 V, f = 1 MHz
VDS = - 20 V, ID = - 110 A
f = 1 MHz
Rg
td(on)
tr
td(off)
VDD = - 20 V, RL = 0.18
ID - 110 A, VGEN = - 10 V, Rg = 1
tf
pF
nC
-
15
23
-
112
168
-
45
68
-
-
- 330
A
-
- 0.95
- 1.5
V
ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 100 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2035-Rev. C, 17-Oct-11
2
Document Number: 65268
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM110P04-04L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
150
240
V GS = 10 V thru 5 V
120
ID - Drain Current (A)
ID - Drain Current (A)
200
160
V GS = 4 V
120
80
90
60
T C = 25 °C
30
40
T C = 125 °C
V GS = 3 V
T C = - 55 °C
0
0
0
3
6
9
12
VDS - Drain-to-Source Voltage (V)
0
15
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
200
0.015
160
0.012
RDS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
Output Characteristics
5
T C = - 55 °C
120
T C = 25 °C
80
T C = 125 °C
40
0.009
V GS = 4.5 V
0.006
V GS = 10 V
0.003
0
0
0
16
32
48
ID - Drain Current (A)
64
80
0
20
Transconductance
40
60
ID - Drain Current (A)
80
100
On-Resistance vs. Drain Current
15 000
10
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
ID = 110 A
12 500
Ciss
10 000
7500
5000
Coss
2500
8
V DS = 20 V
6
4
2
Crss
0
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
35
0
40
50
75
100
125
150
175
200
225
Qg - Total Gate Charge (nC)
Capacitance
S11-2035-Rev. C, 17-Oct-11
25
Gate Charge
3
Document Number: 65268
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM110P04-04L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 30 A
1.7
10
V GS = 10 V
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.0
1.4
1.1
0.8
T J = 150 °C
1
T J = 25 °C
0.1
0.01
0.5
- 50
0.001
- 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
0
On-Resistance vs. Junction Temperature
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
0.05
1.2
0.9
0.04
ID = 250 μA
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
0.2
0.03
0.02
0.01
T J = 150 °C
0
ID = 5 mA
0.3
0
- 0.3
T J = 25 °C
0
0.6
2
4
6
8
VGS - Gate-to-Source Voltage (V)
- 0.6
- 50
10
- 25
0
On-Resistance vs. Gate-to-Source Voltage
25
50
75 100
TJ - Temperature (°C)
125
150
175
Threshold Voltage
- 42
VDS - Drain-to-Source Voltage (V)
ID = 10 mA
- 44
- 46
- 48
- 50
- 52
- 54
- 50
- 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S11-2035-Rev. C, 17-Oct-11
4
Document Number: 65268
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM110P04-04L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
100 µs
I D - Drain Current (A)
100
Limited by
RDS(on)*
ID Limited
1 ms
10 ms
100 ms, 1 s, 10 s, DC
10
1
TC = 25 °C
Single Pulse
0.1
BVDSS Limited
0.01
0.01
* VGS
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which R DS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2035-Rev. C, 17-Oct-11
5
Document Number: 65268
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM110P04-04L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65268.
S11-2035-Rev. C, 17-Oct-11
6
Document Number: 65268
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000
