SQM120N02-1m3L
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Vishay Siliconix
Automotive N-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
20
RDS(on) () at VGS = 10 V
0.0013
RDS(on) () at VGS = 4.5 V
0.0017
ID (A)
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
120
Configuration
• 100 % Rg and UIS Tested
Single
• AEC-Q101 Qualifiedd
D
• Compliant to RoHS Directive 2002/95/EC
TO-263
G
G
D S
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-263
Lead (Pb)-free and Halogen-free
SQM120N02-1m3L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
± 20
Continuous Drain Currenta
TC = 25 °C
ID
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
Operating Junction and Storage Temperature Range
V
120
120
IS
120
IDM
480
IAS
55
EAS
150
PD
TC = 125 °C
UNIT
375
125
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB
Mountc
Junction-to-Case (Drain)
RthJA
40
RthJC
0.4
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S11-1969-Rev. A, 17-Oct-11
1
Document Number: 63319
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N02-1m3L
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
-
-
2.0
2.5
VDS = 0 V, VGS = ± 20 V
ID(on)
Drain-Source On-State Resistancea
Forward
20
1.5
IDSS
Currenta
Transconductanceb
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
IGSS
Zero Gate Voltage Drain Current
On-State Drain
VDS
VGS(th)
RDS(on)
V
-
-
± 100
VGS = 0 V
VDS = 20 V
-
-
1
VGS = 0 V
VDS = 20 V, TJ = 125 °C
-
-
150
VGS = 0 V
VDS = 20 V, TJ = 175 °C
-
-
500
μA
VGS = 10 V
VDS5 V
120
-
-
A
VGS = 10 V
ID = 40 A
-
0.0011
0.0013
VGS = 10 V
ID = 40 A, TJ = 125 °C
-
-
0.0020
VGS = 10 V
ID = 40 A, TJ = 175 °C
-
-
0.0023
VGS = 4.5 V
ID = 35 A
-
0.0013
0.0017
-
252
-
-
11 538
14 500
-
3598
4500
-
1385
1750
-
192
290
-
27
-
-
31
-
0.5
1.1
1.8
-
18
27
gfs
VDS = 15 V, ID = 40 A
nA
μA
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
VGS = 0 V
VGS = 10 V
VDS = 10 V, f = 1 MHz
VDS = 10 V, ID = 120 A
f = 1 MHz
Rg
td(on)
tr
td(off)
VDD = 10 V, RL = 0.084
ID 120 A, VGEN = 10 V, Rg = 1
tf
pF
nC
-
11
17
-
64
96
-
12
18
-
-
480
A
-
0.8
1.5
V
ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 40 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-1969-Rev. A, 17-Oct-11
2
Document Number: 63319
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N02-1m3L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
175
170
VGS = 10 V thru 4 V
136
ID - Drain Current (A)
ID - Drain Current (A)
140
105
70
35
102
TC = 25 °C
68
34
TC = - 55 °C
TC = 125 °C
VGS = 3 V
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
10
0
Output Characteristics
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
Transfer Characteristics
0.005
400
TC = - 55 °C
gfs - Transconductance (S)
RDS(on) - On-Resistance (Ω)
0.004
320
TC = 25 °C
240
TC = 125 °C
160
0.003
0.002
VGS = 4.5 V
0.001
80
VGS = 10 V
0.000
0
0
0
12
24
36
48
24
48
60
72
96
120
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
15 000
10
ID = 120 A
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
Ciss
12 000
9000
6000
Coss
3000
Crss
0
8
VDS = 10 V
6
4
2
0
0
4
8
12
16
VDS - Drain-to-Source Voltage (V)
20
0
Capacitance
S11-1969-Rev. A, 17-Oct-11
40
80
120
160
Qg - Total Gate Charge (nC)
200
Gate Charge
3
Document Number: 63319
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N02-1m3L
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 30 A
1.7
10
VGS = 10 V
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.0
1.4
VGS = 4.5 V
1.1
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.8
0.5
- 50 - 25
0
25
50
75
100
125
150
0.001
0.0
175
0.2
0.6
0.8
1.0
1.2
Source Drain Diode Forward Voltage
0.010
0.5
0.008
0.1
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
On-Resistance vs. Junction Temperature
0.006
0.004
TJ = 150 °C
0.002
0.4
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
- 0.3
ID = 5 mA
- 0.7
ID = 250 μA
- 1.1
TJ = 25 °C
- 1.5
- 50 - 25
0.000
0
2
4
6
8
10
0
25
VGS - Gate-to-Source Voltage (V)
50
75
100
125
150
175
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
30
VDS - Drain-to-Source Voltage (V)
ID = 10 mA
28
26
24
22
20
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-1969-Rev. A, 17-Oct-11
4
Document Number: 63319
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N02-1m3L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
100 μs
IDM Limited
ID - Drain Current (A)
100
1 ms
10 ms
100 ms, 1 s, 10 s, DC
ID Limited
10
Limited by RDS(on)*
1
TC = 25 °C
Single Pulse
0.1
BVDSS Limited
0.01
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-1969-Rev. A, 17-Oct-11
5
Document Number: 63319
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM120N02-1m3L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63319.
S11-1969-Rev. A, 17-Oct-11
6
Document Number: 63319
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2023
1
Document Number: 91000
