SQM120P10_10M1LGE3

SQM120P10-10m1L www.vishay.com Vishay Siliconix Automotive P-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET -100 RDS(on) (Ω) at VGS = -10 V 0.0101 RDS(on) (Ω) at VGS = -4.5 V 0.0150 ID (A) • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified -120 Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Single Package TO-263 S TO-263 G S D D G Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ± 20 Continuous Drain Current a TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V -120 -78 IS -120 IDM -480 IAS -78 EAS 304 PD UNIT 375 125 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). S15-2463-Rev. A, 19-Oct-15 Document Number: 76943 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P10-10m1L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = -250 μA -100 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage IGSS - - ± 100 VGS = 0 V VDS = -100 V - - -1 - - -50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = -100 V, TJ = 125 °C VGS = 0 V VDS = -100 V, TJ = 175 °C - - -500 On-State Drain Current a ID(on) VGS = -10 V VDS ≤ -5 V -120 - - VGS = -10 V ID = -30 A - 0.0081 0.0101 Drain-Source On-State Resistance a Forward Transconductance b RDS(on) gfs VGS = -10 V ID = -30 A, TJ = 125 °C - - 0.0168 VGS = -10 V ID = -30 A, TJ = 175 °C - - 0.0205 VGS = -4.5 V ID = -20 A - 0.0114 0.0150 - 60 - VDS = -15 V, ID = -25 A V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Gate-Source Charge c Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c VGS = 0 V VDS = -25 V, f = 1 MHz Qg Qgs VGS = -10 V VDS = -50 V, ID = -70 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = -50 V, RL = 0.71 Ω ID ≅ -70 A, VGEN = -10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics ISM Forward Voltage VSD trr Reverse Recovery Charge b Qrr 6750 9000 3500 5000 - 450 600 - 125 190 - 25 - - 30 - 3 6.44 9.7 - 20 30 - 100 150 - 120 180 - 200 300 - - -480 pF nC Ω ns b Pulsed Current a Reverse Recovery Time b - IF = -100 A, VGS = 0 V VR = -80 V, IF = -50 A, di/dt = 100 A/μs A - -0.95 -1.5 V - 110 - ns - 385 - nC Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2463-Rev. A, 19-Oct-15 Document Number: 76943 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P10-10m1L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 160 120 VGS = 10 V thru 5 V 96 ID - Drain Current (A) ID - Drain Current (A) 128 96 VGS = 4 V 64 72 TC = 25 °C 48 24 32 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 VDS - Drain-to-Source Voltage (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3 6 9 12 0 15 10 0.030 100 TC = - 55 °C RDS(on) - On-Resistance (Ω) gfs - Transconductance (S) 0.024 TC = 25 °C 80 60 TC = 125 °C 40 0.018 VGS = 4.5 V 0.012 VGS = 10 V 0.006 20 0.000 0 0 7 14 21 ID - Drain Current (A) 28 0 35 40 60 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 VGS - Gate-to-Source Voltage (V) 12000 9600 C - Capacitance (pF) 20 7200 Ciss 4800 Coss 2400 Crss ID = 70 A VDS = 50 V 8 6 4 2 0 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Capacitance S15-2463-Rev. A, 19-Oct-15 100 0 30 60 90 120 150 Qg - Total Gate Charge (nC) Gate Charge Document Number: 76943 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P10-10m1L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 30 A VGS = 10 V 1.8 10 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.1 1.5 VGS = 4.5 V 1.2 0.9 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.6 - 50 - 25 0 25 50 75 100 125 150 0.001 0.0 175 0.2 On-Resistance vs. Junction Temperature 0.6 0.8 1.0 1.2 Source Drain Diode Forward Voltage 1.2 0.10 0.9 0.08 ID = 250 μA VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) 0.4 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) 0.06 0.04 TJ = 150 °C 0.02 0.6 ID = 5 mA 0.3 0.0 - 0.3 TJ = 25 °C - 0.6 0.00 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) - 50 - 25 10 0 25 50 75 100 125 150 175 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage - 110 VDS - Drain-to-Source Voltage (V) ID = 10 mA - 114 - 118 - 122 - 126 - 130 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S15-2463-Rev. A, 19-Oct-15 Document Number: 76943 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P10-10m1L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 ID - Drain Current (A) 100 IDM Limited 100 μs 1 ms 10 ID Limited 10 ms 100 ms, 1 s, 10 s, DC Limited by RDS(on)* 1 BVDSS Limited TC = 25 °C Single Pulse 0.1 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-2463-Rev. A, 19-Oct-15 Document Number: 76943 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P10-10m1L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76943. S15-2463-Rev. A, 19-Oct-15 Document Number: 76943 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000