SQM200N04-1M1L_GE3

SQM200N04-1m1L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0011 RDS(on) () at VGS = 4.5 V 0.0013 ID (A) • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • AEC-Q101 Qualifiedd 200 Configuration • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Single D TO-263-7L G Drain connected to Tab G SS DS SS S N-Channel MOSFET ORDERING INFORMATION Package TO-263-7L Lead (Pb)-free and Halogen-free SQM200N04-1m1L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 200 200 IS 200 IDM 600 IAS 100 EAS 500 PD UNIT 375 125 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 40 RthJC 0.4 °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S12-2164-Rev. A, 24-Sep-12 Document Number: 62679 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM200N04-1m1L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = 40 V - - 1 - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 40 V, TJ = 125 °C VGS = 0 V VDS = 40 V, TJ = 175 °C - - 500 On-State Drain Currenta ID(on) VGS = 10 V VDS5 V 200 - - VGS = 10 V ID = 30 A - 0.0008 0.0011 VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.0019 VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.0023 VGS = 4.5 V ID = 20 A - 0.0009 0.0013 - 219 - - 16 524 20 655 - 2060 2575 Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VDS = 15 V, ID = 30 A V nA μA A  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 484 605 Total Gate Chargec Qg - 275 413 - 56.6 - - 45.4 - f = 1 MHz 4.2 8.5 12.8 - 13 20 VDD = 20 V, RL = 1  ID  20 A, VGEN = 10 V, Rg = 1  - 12 18 - 443 665 - 126 189 - - 600 A - 0.8 1.5 V Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 20 A td(on) tr td(off) tf pF nC  ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 60 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-2164-Rev. A, 24-Sep-12 Document Number: 62679 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM200N04-1m1L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 160 250 VGS = 10 V thru 6 V VGS = 5 V VGS = 4 V 120 ID - Drain Current (A) ID - Drain Current (A) 200 150 VGS = 3 V 100 80 TC = 125 °C 40 TC = 25 °C 50 TC = - 55 °C 0 0 0 2 4 6 8 0 10 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 10 450 TC = - 55 °C 360 gfs - Transconductance (S) ID - Drain Current (A) 1.6 1.2 0.8 TC = 25 °C 0.4 TC = 125 °C 270 TC = 125 °C 180 90 TC = - 55 °C 0.0 0 0 1 2 3 4 5 0 14 28 42 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Transconductance 0.0025 25 000 0.0020 20 000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = 25 °C 0.0015 VGS = 4.5 V 0.0010 VGS = 10 V 0.0005 56 70 32 40 Ciss 15 000 10 000 5000 Coss Crss 0.0000 0 0 20 40 60 80 100 ID - Drain Current (A) On-Resistance vs. Drain Current S12-2164-Rev. A, 24-Sep-12 120 0 8 16 24 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62679 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM200N04-1m1L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.4 ID = 20 A VDS = 20 V ID = 30 A 2.1 8 VGS = 10 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 6 4 2 1.8 1.5 VGS = 4.5 V 1.2 0.9 0.6 - 50 - 25 0 0 60 120 180 240 300 0 Qg - Total Gate Charge (nC) 0.005 10 0.004 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 75 100 125 150 175 On-Resistance vs. Junction Temperature 100 TJ = 150 °C TJ = 25 °C 0.1 50 TJ - Junction Temperature (°C) Gate Charge 1 25 0.01 0.003 0.002 TJ = 150 °C 0.001 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 VSD - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) 50 VDS - Drain-to-Source Voltage (V) 0.5 0.1 VGS(th) Variance (V) 4 On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage - 0.3 ID = 5 mA - 0.7 - 1.1 ID = 250 μA - 1.5 - 50 - 25 2 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S12-2164-Rev. A, 24-Sep-12 125 150 175 48 ID = 10 mA 46 44 42 40 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 62679 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM200N04-1m1L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 ID - Drain Current (A) 100 IDM Limited 100 μs ID Limited 1 ms 10 ms 100 ms, 1 s, 10 s, DC 10 Limited by RDS(on)* 1 BVDSS Limited TC = 25 °C Single Pulse 0.1 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S12-2164-Rev. A, 24-Sep-12 Document Number: 62679 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM200N04-1m1L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.                                 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62679. S12-2164-Rev. A, 24-Sep-12 Document Number: 62679 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix D2PAK (TO-263-7L) Case Outline Notes 1. Plane B includes maximum features of heat sink tab and plastic 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils 3. Pin to pin coplanarity max. 4 mils 4. Lead thickness 25 mils 5. For SUM part numbers lead thickness is 24 mils to 29 mils 6. For reference only 7. Use inches as the primary measurement 8. This feature is only for SUM INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 c* SUB 0.012 0.018 0.305 0.457 c* SUM 0.022 0.028 0.559 0.711 c1 0.018 0.025 0.457 0.635 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.260 0.280 6.604 7.112 D2 0.046 0.050 1.168 1.270 D3 0.045 0.055 1.143 1.397 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.072 0.078 1.829 1.981 e 0.050 BSC 1.27 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.002 0.254 BSC - 0.050 ECN: T22-0410-Rev. D, 19-Sep-2022 DWG: 6006 Revision: 19-Sep-2022 1 Document Number: 63782 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern D2PAK (TO-263-7L) 0.145 (3.683) 0.635 (16.129) 0.355 (9.017) 0.420 (10.668) 0.135 (3.429) 0.061 (1.540) 0.039 (1.000) 0.050 (1.270) 0.339 (8.620) Revision: 23-Jul-2020 Document Number: 77341 1 For technical questions, contact: pmostechsupport@vishay.comgz THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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