SQM200N04-1m7L
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Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
40
RDS(on) (Ω) at VGS = 10 V
0.0017
RDS(on) (Ω) at VGS = 4.5 V
0.0020
ID (A)
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified d
200
Configuration
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Single
Package
TO-263-7L
TO-263 7-Lead
D
G
S
D
Top View
N-Channel MOSFET
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C a
TC = 125 °C
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
200
193
IS
200
IDM
600
IAS
95
EAS
451
PD
UNIT
375
125
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
40
RthJC
0.4
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
S15-1874-Rev. B, 10-Aug-15
Document Number: 67058
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SQM200N04-1m7L
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
VDS
VGS = 0 V, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS ≥ 5 V
200
-
-
VGS = 10 V
ID = 30 A
-
0.0012
0.0017
VGS = 10 V
ID = 30 A, TJ = 125 °C
-
-
0.0028
VGS = 10 V
ID = 30 A, TJ = 175 °C
-
-
0.0034
VGS = 4.5 V
ID = 20 A
-
0.0014
0.0020
-
181
-
VDS = 15 V, ID = 30 A
V
nA
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
Rg
VGS = 0 V
VGS = 10 V
VDS = 20 V, f = 1 MHz
VDS = 20 V, ID = 20 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 20 V, RL = 1 Ω
ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω
tf
Source-Drain Diode Ratings and Characteristics
-
8934
11 168
-
1592
1990
-
928
1160
-
194
291
-
25
-
-
40
-
0.25
0.8
1.8
-
22
33
pF
nC
Ω
-
17
26
-
70
105
-
16
24
-
-
600
A
-
0.8
1.5
V
ns
b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = 60 A, VGS = 0 V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1874-Rev. B, 10-Aug-15
Document Number: 67058
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM200N04-1m7L
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
150
240
VGS = 10 V thru 6 V
VGS = 5 V
120
VGS = 4 V
ID - Drain Current (A)
ID - Drain Current (A)
180
120
60
90
TC = 25 °C
60
30
TC = 125 °C
VGS = 3 V
TC = -55 °C
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
350
TC = -55 °C
280
gfs - Transconductance (S)
ID - Drain Current (A)
1.6
1.2
TC = 25 °C
0.8
0.4
TC = 125 °C
210
TC = 125 °C
140
70
TC = -55 °C
0
0.0
0
1
2
3
4
0
5
14
28
42
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Transconductance
0.005
15 000
0.004
12 000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = 25 °C
0.003
0.002
VGS = 4.5 V
0.001
56
70
9000
Ciss
6000
3000
VGS = 10 V
Coss
Crss
0.000
0
20
40
60
80
100
120
0
0
5
10
15
20
25
30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
S15-1874-Rev. B, 10-Aug-15
35
40
Document Number: 67058
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SQM200N04-1m7L
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 20 A
VDS = 20 V
8
6
4
2
0
0
20
40
60
80
1.1
0.8
-25
0
25
50
75
100
125
150
Gate Charge
On-Resistance vs. Junction Temperature
175
0.005
0.004
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
VGS = 4.5 V
TJ - Junction Temperature (°C)
TJ = 150 °C
1
0.1
TJ = 25 °C
0.003
TJ = 150 °C
0.002
TJ = 25 °C
0.001
0.01
0.000
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
VDS - Drain-to-Source Voltage (V)
50
0.1
VGS(th) Variance (V)
1.4
Qg - Total Gate Charge (nC)
10
-0.3
ID = 5 mA
ID = 250 μA
-0.7
-1.1
-1.5
-50
VGS = 10 V
1.7
0.5
-50
100 120 140 160 180 200
100
0.001
0.0
I D = 30 A
ID = 10 mA
48
46
44
42
40
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S15-1874-Rev. B, 10-Aug-15
Document Number: 67058
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM200N04-1m7L
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
1000
ID Limited
100 μs
ID - Drain Current (A)
100
10
1 ms
10 ms, 100 ms, 1 s, 10 s, DC
Limited by R DS(on)*
1
0.1
0.01
0.01
TC = 25 °C
Single Pulse
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-1874-Rev. B, 10-Aug-15
Document Number: 67058
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM200N04-1m7L
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67058.
S15-1874-Rev. B, 10-Aug-15
Document Number: 67058
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM200N04-1m7L
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REVISION HISTORY
REVISION
B
a
DATE
04-Aug-15
Vishay Siliconix
DESCRIPTION OF CHANGE
• Revised Rg minimum limit
Note
a. As of April 2014
S15-1874-Rev. B, 10-Aug-15
Document Number: 67058
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Package Information
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Vishay Siliconix
D2PAK (TO-263-7L) Case Outline
Notes
1. Plane B includes maximum features of heat sink tab and plastic
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils
3. Pin to pin coplanarity max. 4 mils
4. Lead thickness 25 mils
5. For SUM part numbers lead thickness is 24 mils to 29 mils
6. For reference only
7. Use inches as the primary measurement
8. This feature is only for SUM
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
c* SUB
0.012
0.018
0.305
0.457
c* SUM
0.022
0.028
0.559
0.711
c1
0.018
0.025
0.457
0.635
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.260
0.280
6.604
7.112
D2
0.046
0.050
1.168
1.270
D3
0.045
0.055
1.143
1.397
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.072
0.078
1.829
1.981
e
0.050 BSC
1.27 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.002
0.254 BSC
-
0.050
ECN: T22-0410-Rev. D, 19-Sep-2022
DWG: 6006
Revision: 19-Sep-2022
1
Document Number: 63782
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
Recommended Land Pattern D2PAK (TO-263-7L)
0.145
(3.683)
0.635
(16.129)
0.355
(9.017)
0.420
(10.668)
0.135
(3.429)
0.061
(1.540)
0.039
(1.000)
0.050
(1.270)
0.339
(8.620)
Revision: 23-Jul-2020
Document Number: 77341
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2022
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Document Number: 91000
