SQM30010EL
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Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
TO-263
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
D
Top View
G
D
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () at VGS = 10 V
0.00135
RDS(on) () at VGS = 4.5 V
0.00175
ID (A)
Configuration
Package
G
120
N-Channel MOSFET
Single
S
TO-263
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
30
Gate-source voltage
VGS
± 20
Continuous drain current a
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
V
120
120
IS
120
IDM
360
IAS
72
EAS
259
PD
UNIT
375
125
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
40
RthJC
0.4
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
S18-0667-Rev. A, 02-Jul-2018
Document Number: 76633
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For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SQM30010EL
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0 V, ID = 250 μA
30
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = 30 V
-
-
1
-
-
50
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = 30 V, TJ = 125 °C
VGS = 0 V
VDS = 30 V, TJ = 175 °C
-
-
800
On-state drain current a
ID(on)
VGS = 10 V
VDS 5 V
100
-
-
RDS(on)
VGS = 10 V
ID = 40 A
-
Drain-source on-state resistance a
Forward transconductance b
Dynamic
gfs
0.00110 0.00135
VGS = 10 V
ID = 40 A, TJ = 125 °C
-
-
0.00191
VGS = 10 V
ID = 40 A, TJ = 175 °C
-
-
0.00220
VGS = 4.5 V
ID = 35 A
-
VDS = 15 V, ID = 40 A
0.00143 0.00175
-
233
-
-
20 090
28 000
-
7000
9500
-
540
750
V
nA
μA
μA
A
S
b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay
time c
Rise time c
Turn-off delay time c
Fall time c
VGS = 0 V
VDS = 15 V, f = 1 MHz
-
295
450
-
59
-
-
59
-
f = 1 MHz
0.5
1.11
1.7
-
30
45
VDD = 15 V, RL = 0.2
ID 50 A, VGEN = 10 V, Rg = 1
-
240
360
-
98
150
-
44
70
-
-
360
-
0.8
1.5
V
-
96
195
ns
-
185
370
nC
-
48
-
VGS = 10 V
VDS = 15 V, ID = 50 A
td(on)
tr
td(off)
pF
tf
nC
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = 60 A, VGS = 0 V
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
48
-
IRM(REC)
-
-3.4
-
Body diode peak reverse recovery current
IF = 35 A, di/dt = 100 A/μs
A
ns
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0667-Rev. A, 02-Jul-2018
Document Number: 76633
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM30010EL
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
350
200
10000
VGS = 10 V thru 4 V
160
210
140
VGS = 3 V
70
1000
120
1st line
2nd line
2nd line
ID - Drain Current (A)
2nd line
ID - Drain Current (A)
280
TC= 125 °C
80
TC= 25 °C
100
40
TC= -55 °C
0
0
2
4
6
8
0
10
10
0
VDS - Drain-to-Source Voltage (V)
2nd line
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
Output Characteristics
Axis Title
Axis Title
350
0.0025
10000
10000
140
100
70
0
20
40
60
80
0.0010
VGS = 10 V
10
0
20
80
Transconductance
On-Resistance vs. Drain Current
Axis Title
1000
Crss
100
100
10
10
18
24
30
10000
ID = 50 A
VDS = 15 V
8
1000
6
1st line
2nd line
1000
Coss
2nd line
VGS - Gate-to-Source Voltage (V)
Ciss
12
4
100
2
0
10
0
70
140
210
280
VDS - Drain-to-Source Voltage (V)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S18-0667-Rev. A, 02-Jul-2018
100
10
10000
1st line
2nd line
2nd line
C - Capacitance (pF)
60
ID - Drain Current (A)
2nd line
Axis Title
6
40
ID - Drain Current (A)
2nd line
10 000
100
0.0005
100
100 000
0
1000
VGS = 4.5 V
0.0015
0.0000
10
0
0.0020
1st line
2nd line
1000
TC = 125 °C
210
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = 25 °C
280
2nd line
RDS(on) - On-Resistance (Ω)
TC = -55 °C
350
Document Number: 76633
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For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM30010EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
100
10000
2nd line
IS - Source Current (A)
ID = 40 A
1.7
VGS = 10 V
1000
1.4
1st line
2nd line
VGS = 4.5 V
1.1
100
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.8
0.5
0.01
10
-50 -25
0
25
50
0
75 100 125 150 175
0.2
0.4
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
0.8
1.0
1.2
Source Drain Diode Forward Voltage
Axis Title
Axis Title
0.005
0.7
10000
10000
0.2
2nd line
VGS(th) Variance (V)
0.004
1000
0.003
0.002
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
0.6
VSD - Source-to-Drain Voltage (V)
2nd line
TJ = 125 °C
100
0.001
1000
ID = 5 mA
-0.3
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
-0.8
ID = 250 μA
100
-1.3
TJ = 25 °C
0
-1.8
10
0
2
4
6
8
10
-50 -25
10
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
10000
ID = 10 mA
38
1000
37
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
39
36
100
35
34
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S18-0667-Rev. A, 02-Jul-2018
Document Number: 76633
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For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM30010EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
1000
10000
100 μs
IDM limited
1 ms
10 ms 1000
100 ms, 1 s, 10 s, DC
ID limited
10
1st line
2nd line
2nd line
ID - Drain Current (A)
100
Limited by RDS(on) (1)
1
100
BVDSS limited
0.1
TC = 25 °C
Single pulse
0.01
0.01
(1)
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S18-0667-Rev. A, 02-Jul-2018
Document Number: 76633
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM30010EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76633.
S18-0667-Rev. A, 02-Jul-2018
Document Number: 76633
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 09-Jul-2021
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Document Number: 91000
