SQM40010EL
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Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
40
RDS(on) () at VGS = 10 V
0.0016
RDS(on) () at VGS = 4.5 V
0.0019
ID (A)
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified d
120
Configuration
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Single
D
TO-263
G
S
S
D
Top View
G
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-263
Lead (Pb)-free and Halogen-free
SQM40010EL-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current a
Continuous Source Current (Diode
TC = 125 °C
Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
120
120
IS
120
IDM
300
IAS
80
EAS
320
PD
UNIT
375
125
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
40
RthJC
0.4
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mount c
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
S15-2917-Rev. A, 14-Dec-15
Document Number: 69430
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM40010EL
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
2
mA
On-State Drain Current a
ID(on)
VGS = 10 V
VDS 5 V
120
-
-
A
VGS = 10 V
ID = 30 A
-
VGS = 10 V
ID = 30 A, TJ = 125 °C
-
-
0.00250
VGS = 10 V
ID = 30 A, TJ = 175 °C
-
-
0.00280
VGS = 4.5 V
ID = 20 A
-
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Drain-Source On-State Resistance a
Forward Transconductance b
Dynamic
RDS(on)
gfs
VDS = 15 V, ID = 30 A
V
nA
μA
0.00121 0.00160
0.00145 0.00190
-
174
-
-
13 630
17 100
S
b
Input Capacitance
Ciss
VGS = 0 V
Output Capacitance
Coss
-
8660
10 900
Reverse Transfer Capacitance
Crss
-
1460
1900
Total Gate Charge c
Qg
-
150
230
Gate-Source
Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay
Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
VGS = 10 V
Qgs
Gate-Drain Charge c
VDS = 20 V, f = 1 MHz
VDS = 20 V, ID = 100 A
-
30
-
-
12
-
f = 1 MHz
0.8
1.62
2.5
-
14
25
VDD = 20 V, RL = 0.2
ID 100 A, VGEN = 10 V, Rg = 1
-
20
30
-
60
90
-
14
25
-
-
300
A
-
0.85
1.5
V
td(on)
tr
td(off)
tf
Source-Drain Diode Ratings and Characteristics
Pulsed Current a
ISM
Forward Voltage
VSD
pF
nC
ns
b
IF = 70 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2917-Rev. A, 14-Dec-15
Document Number: 69430
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM40010EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
200
160
VGS = 10 V thru 4 V
128
ID - Drain Current (A)
ID - Drain Current (A)
160
120
80
VGS = 3 V
96
64
TC = 125 °C
40
32
0
0
TC = 25 °C
TC = - 55 °C
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
10
Transfer Characteristics
300
0.005
TC = - 55 °C
0.004
TC = 25 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
240
180
TC = 125 °C
120
60
0.003
0.002
VGS = 4.5 V
0.001
0
VGS = 10 V
0.000
0
10
20
30
ID - Drain Current (A)
40
50
0
40
60
80
100
120
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
30000
VGS - Gate-to-Source Voltage (V)
10
24000
C - Capacitance (pF)
20
18000
Ciss
12000
Coss
6000
8
ID = 100 A
VDS = 20 V
6
4
2
Crss
0
0
0
8
16
24
32
VDS - Drain-to-Source Voltage (V)
Capacitance
S15-2917-Rev. A, 14-Dec-15
40
0
40
80
120
160
200
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 69430
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM40010EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
ID = 30 A
1.8
10
VGS = 10 V
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.1
1.5
VGS = 4.5 V
1.2
0.9
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.6
- 50 - 25
0.001
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
0.0
175
0.015
0.5
0.012
0.1
0.009
0.006
TJ = 150 °C
0.003
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
On-Resistance vs. Junction Temperature
0.2
- 0.3
ID = 5 mA
- 0.7
ID = 250 μA
- 1.1
TJ = 25 °C
0.000
0
2
4
6
8
10
- 1.5
- 50 - 25
0
25
50
75
100
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
125
150
175
VDS - Drain-to-Source Voltage (V)
55
52
ID = 1 mA
49
46
43
40
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S15-2917-Rev. A, 14-Dec-15
Document Number: 69430
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM40010EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
100 μs
ID - Drain Current (A)
100
ID Limited
1 ms
10 ms
100 ms, 1 s, 10 s, DC
10
Limited by RDS(on)*
1
0.1
0.01
0.01
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2917-Rev. A, 14-Dec-15
Document Number: 69430
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM40010EL
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69430.
S15-2917-Rev. A, 14-Dec-15
Document Number: 69430
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
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to the warranty expressed therein.
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Revision: 01-Jan-2022
1
Document Number: 91000
