SQM40016EM_GE3

SQM40016EM www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES TO-263 7-Lead • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified Drain conntected to tab Top View S G D S S S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S D PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 40 ID (A) 250 Configuration Package G 0.00100 N-Channel MOSFET Single S TO-263-7L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID V 250 229 IS 250 IDM 420 IAS 78 EAS 304 PD UNIT 300 100 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 0.5 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) S17-1886-Rev. A, 01-Jan-18 Document Number: 76558 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40016EM www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = 40 V - - 1 - - 50 V nA μA Zero gate voltage drain current IDSS VGS = 0 V VDS = 40 V, TJ = 125 °C VGS = 0 V VDS = 40 V, TJ = 175 °C - - 500 μA On-state drain current a ID(on) VGS = 10 V VDS  5 V 100 - - A VGS = 10 V ID = 40 A - VGS = 10 V ID = 40 A, TJ = 125 °C - - 0.00152 VGS = 10 V ID = 40 A, TJ = 175 °C - - 0.00184 - 181 - - 10 841 15 000 - 2928 4000 - 198 270 Drain-source on-state resistance a Forward transconductance b RDS(on) gfs VDS = 15 V, ID = 40 A 0.00081 0.00100  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 100 A f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 0.2  ID  100 A, VGEN = 10 V, Rg = 1  tf pF - 163 245 - 46 - - 36 - 1 2.2 3.4 - 24 40 - 215 330 - 59 90 - 35 55 - - 420 A - 0.8 1.5 V nC  ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD IF = 60 A, VGS = 0 V Body diode reverse recovery time trr - 92 185 ns Body diode reverse recovery charge Qrr - 198 400 nC Reverse recovery fall time ta - 47 - Reverse recovery rise time tb - 45 - IRM(REC) - -4.4 - Body diode peak reverse recovery current IF = 40 A, di/dt = 100 A/μs ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1886-Rev. A, 01-Jan-18 Document Number: 76558 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40016EM www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 250 10000 150 VGS= 10 V thru 6 V 120 150 100 50 1000 90 1st line 2nd line VGS = 5 V 2nd line ID - Drain Current (A) 2nd line ID - Drain Current (A) 200 TC = 25 °C 60 100 30 TC = 125 °C VGS = 4 V 0 TC = -55 °C 0 0 2 4 6 8 10 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 250 0.0030 10000 1000 150 TC = 125 °C 100 100 50 0 2nd line RDS(on) - On-Resistance (Ω) TC = 25 °C 200 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 10 0 12 24 36 48 0.0024 0.0018 0.0012 VGS = 10 V 0.0006 0.0000 60 0 20 ID - Drain Current (A) 2nd line Axis Title 100 Coss 3600 Crss 0 10 32 40 10000 ID = 100 A VDS = 20 V 8 1000 6 1st line 2nd line 7200 2nd line VGS - Gate-to-Source Voltage (V) 1000 Ciss 10 800 1st line 2nd line 2nd line C - Capacitance (pF) 14 400 24 4 100 2 0 10 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S17-1886-Rev. A, 01-Jan-18 100 10 10000 16 80 Axis Title 18 000 8 60 On-Resistance vs. Drain Current Transconductance 0 40 ID - Drain Current (A) 2nd line 200 Document Number: 76558 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40016EM www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 ID = 40 A 1000 1.4 1.1 100 0.8 0.5 25 50 TJ = 150 °C 1000 1 100 0.1 TJ = 25 °C 0.01 10 0 10 1st line 2nd line 2nd line IS - Source Current (A) VGS = 10 V 1.7 -50 -25 10000 100 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 75 100 125 150 175 10 0 0.2 0.5 0.7 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title 10000 0.8 0.004 2nd line VGS(th) Variance (V) 0.3 1000 0.003 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.005 0.002 TJ = 125°C 100 0.001 -0.2 ID = 5 mA -0.7 ID = 250 μA -1.2 TJ = 25 °C 0 10 0 2 4 6 8 -1.7 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 53 ID = 1 mA 51 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 55 49 47 45 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature S17-1886-Rev. A, 01-Jan-18 Document Number: 76558 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40016EM www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 10000 1 ms ID limited 1000 10 ms 100 ms, 1 s, 10 s, DC 10 Limited by RDS(on) (1) 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 μs IDM limited 100 100 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) BVDSS limited 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S17-1886-Rev. A, 01-Jan-18 Document Number: 76558 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM40016EM www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76558. S17-1886-Rev. A, 01-Jan-18 Document Number: 76558 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix D2PAK (TO-263-7L) Case Outline Notes 1. Plane B includes maximum features of heat sink tab and plastic 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils 3. Pin to pin coplanarity max. 4 mils 4. Lead thickness 25 mils 5. For SUM part numbers lead thickness is 24 mils to 29 mils 6. For reference only 7. Use inches as the primary measurement 8. This feature is only for SUM INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 c* SUB 0.012 0.018 0.305 0.457 c* SUM 0.022 0.028 0.559 0.711 c1 0.018 0.025 0.457 0.635 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.260 0.280 6.604 7.112 D2 0.046 0.050 1.168 1.270 D3 0.045 0.055 1.143 1.397 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.072 0.078 1.829 1.981 e 0.050 BSC 1.27 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.002 0.254 BSC - 0.050 ECN: T22-0410-Rev. D, 19-Sep-2022 DWG: 6006 Revision: 19-Sep-2022 1 Document Number: 63782 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern D2PAK (TO-263-7L) 0.145 (3.683) 0.635 (16.129) 0.355 (9.017) 0.420 (10.668) 0.135 (3.429) 0.061 (1.540) 0.039 (1.000) 0.050 (1.270) 0.339 (8.620) Revision: 23-Jul-2020 Document Number: 77341 1 For technical questions, contact: pmostechsupport@vishay.comgz THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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