SQM50028EM
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Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
TO-263 7-Lead
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified
Drain conntected
to tab
Top View
S
G
D S
S
S
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
D
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
60
0.00200
ID (A)
120
Configuration
Package
G
Single
N-Channel MOSFET
TO-263-7L
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
60
Gate-source voltage
VGS
± 20
TC = 25 °C
Continuous drain current a
Continuous source current (diode
TC = 125 °C
conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
V
120
120
IS
120
IDM
240
IAS
75
EAS
281
PD
UNIT
375
125
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB
mount c
RthJA
40
RthJC
0.4
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
S17-0937-Rev. B, 19-Jun-17
Document Number: 74738
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SQM50028EM
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0 V, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3.0
3.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = 60 V
-
-
1
-
-
50
V
nA
μA
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = 60 V, TJ = 125 °C
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
250
μA
On-state drain current a
ID(on)
VGS = 10 V
VDS 5 V
100
-
-
A
VGS = 10 V
ID = 30 A
-
VGS = 10 V
ID = 30 A, TJ = 125 °C
-
-
0.00300
VGS = 10 V
ID = 30 A, TJ = 175 °C
-
-
0.00360
-
142
-
-
9100
11 900
Drain-source on-state
resistance a
Forward transconductance b
RDS(on)
gfs
VDS = 15 V, ID = 30 A
0.00163 0.00200
S
Dynamic b
Input capacitance
Ciss
VGS = 0 V
Output capacitance
Coss
-
3550
4700
Reverse transfer capacitance
Crss
-
160
220
Total gate charge c
Qg
-
123
185
Gate-source
charge c
Gate-drain charge c
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay
VGS = 10 V
Qgs
Fall time c
VDS = 30 V, ID = 50 A
Qgd
f = 1 MHz
Rg
td(on)
VDD = 30 V, RL = 0.6
ID 50 A, VGEN = 10 V, Rg = 1
tr
time c
VDS = 25 V, f = 1 MHz
td(off)
tf
Source-Drain Diode Ratings and Characteristics
Pulsed current a
ISM
Forward voltage
VSD
-
40
-
-
19
-
4
8.6
13
-
48
75
-
26
40
-
105
160
-
25
40
pF
nC
ns
b
IF = 50 A, VGS = 0 V
-
-
240
A
-
0.84
1.5
V
Body diode reverse recovery time
trr
-
100
200
ns
Body diode reverse recovery charge
Qrr
-
243
500
nC
Reverse recovery fall time
ta
-
48
-
Reverse recovery rise time
tb
-
53
-
IRM(REC)
-
-4.6
-
Body diode peak reverse recovery current
IF = 25 A, di/dt = 100 A/μs
ns
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0937-Rev. B, 19-Jun-17
Document Number: 74738
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM50028EM
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
150
100
10000
10000
VGS = 10 V thru 5 V
60
100
30
1000
60
1st line
2nd line
1000
90
2nd line
ID - Drain Current (A)
80
1st line
2nd line
2nd line
ID - Drain Current (A)
120
TC = 25 °C
40
100
20
VGS = 4 V
TC = 125 °C
0
0
2
4
6
8
TC = -55 °C
0
10
10
10
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
10
Axis Title
200
0.005
10000
10000
TC = 125 °C
80
100
40
0
6
12
18
24
1000
0.003
VGS = 10 V
0.002
100
0.001
0.000
10
0
0.004
30
10
0
20
40
On-Resistance vs. Drain Current
Axis Title
Coss
100
2000
Crss
0
10
24
36
48
60
10000
ID = 50 A
VDS = 30 V
8
1000
6
1st line
2nd line
1000
6000
2nd line
VGS - Gate-to-Source Voltage (V)
Ciss
4000
4
100
2
0
10
0
30
60
90
120
VDS - Drain-to-Source Voltage (V)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
S17-0937-Rev. B, 19-Jun-17
120
10
10000
1st line
2nd line
2nd line
C - Capacitance (pF)
100
Transconductance
Axis Title
12
80
ID - Drain Current (A)
2nd line
10 000
0
60
ID - Drain Current (A)
2nd line
8000
1st line
2nd line
1000
120
2nd line
RDS(on) - On-Resistance (Ω)
TC = 25 °C
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = -55 °C
160
150
Document Number: 74738
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM50028EM
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
10000
ID = 30 A
10
1000
1.4
VGS = 10 V
1.1
100
0.8
0.5
0
25
50
TJ = 25 °C
0.1
100
0.01
0.001
10
-50 -25
75 100 125 150 175
10
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ - Junction Temperature (°C)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
Axis Title
0.010
0.65
10000
10000
0.20
1000
0.006
0.004
TJ = 150 °C
100
0.002
1000
-0.25
1st line
2nd line
2nd line
VGS(th) Variance (V)
0.008
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
1000
TJ = 150 °C
1
1st line
2nd line
2nd line
IS - Source Current (A)
1.7
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
2.0
ID = 5 mA
-0.70
100
ID = 250 μA
-1.15
TJ = 25 °C
0.000
-1.60
10
0
2
4
6
8
10
10
-50 -25
0
25
50
75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
10000
ID = 1 mA
73
1000
71
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
75
69
100
67
65
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
S17-0937-Rev. B, 19-Jun-17
Document Number: 74738
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM50028EM
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
100 μs
ID Limited
1 ms
10 ms
100 ms, 1 s, 10 s, DC
10
Limited by RDS(on)*
1
0.1
0.01
0.01
TC = 25 °C
Single Pulse
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S17-0937-Rev. B, 19-Jun-17
Document Number: 74738
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM50028EM
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74738.
S17-0937-Rev. B, 19-Jun-17
Document Number: 74738
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
D2PAK (TO-263-7L) Case Outline
Notes
1. Plane B includes maximum features of heat sink tab and plastic
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils
3. Pin to pin coplanarity max. 4 mils
4. Lead thickness 25 mils
5. For SUM part numbers lead thickness is 24 mils to 29 mils
6. For reference only
7. Use inches as the primary measurement
8. This feature is only for SUM
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
c* SUB
0.012
0.018
0.305
0.457
c* SUM
0.022
0.028
0.559
0.711
c1
0.018
0.025
0.457
0.635
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.260
0.280
6.604
7.112
D2
0.046
0.050
1.168
1.270
D3
0.045
0.055
1.143
1.397
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.072
0.078
1.829
1.981
e
0.050 BSC
1.27 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.002
0.254 BSC
-
0.050
ECN: T22-0410-Rev. D, 19-Sep-2022
DWG: 6006
Revision: 19-Sep-2022
1
Document Number: 63782
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
www.vishay.com
Vishay Siliconix
Recommended Land Pattern D2PAK (TO-263-7L)
0.145
(3.683)
0.635
(16.129)
0.355
(9.017)
0.420
(10.668)
0.135
(3.429)
0.061
(1.540)
0.039
(1.000)
0.050
(1.270)
0.339
(8.620)
Revision: 23-Jul-2020
Document Number: 77341
1
For technical questions, contact: pmostechsupport@vishay.comgz
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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Revision: 01-Jan-2023
1
Document Number: 91000
