SQM50P03-07
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Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
- 30
RDS(on) () at VGS = - 10 V
0.0070
RDS(on) () at VGS = - 4.5 V
0.0110
ID (A)
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedd
- 50
Configuration
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Single
TO-263
S
G
G
D S
Top View
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-263
Lead (Pb)-free and Halogen-free
SQM50P03-07-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Currenta
Continuous Source Current (Diode
TC = 125 °C
Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
- 50
- 50
IS
- 50
IDM
- 200
IAS
- 50
EAS
125
PD
UNIT
150
50
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
40
RthJC
1
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mountc
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S12-1847-Rev. B, 30-Jul-12
Document Number: 67044
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SQM50P03-07
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS = 0 V, ID = - 250 μA
- 30
-
-
VDS = VGS, ID = - 250 μA
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS = ± 20 V
-
-
± 100
-
-
-1
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductanceb
VDS
VGS(th)
RDS(on)
gfs
VGS = 0 V
VDS = - 30 V
VGS = 0 V
VDS = - 30 V, TJ = 125 °C
-
-
- 50
VGS = 0 V
VDS = - 30 V, TJ = 175 °C
-
-
- 250
VGS = - 10 V
VDS- 5 V
- 120
-
-
VGS = - 10 V
ID = - 30 A
-
0.0050
0.0070
VGS = - 10 V
ID = - 30 A, TJ = 125 °C
-
-
0.0102
VGS = - 10 V
ID = - 30 A, TJ = 175 °C
-
-
0.0118
VGS = - 4.5 V
ID = - 20 A
VDS = - 15 V, ID = - 30 A
-
0.0089
0.0110
-
62
-
-
4304
5380
V
nA
μA
A
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
-
764
955
Reverse Transfer Capacitance
Crss
-
680
850
Total Gate Chargec
Qg
-
103.5
155
-
14.3
-
-
26.9
-
1.4
2.85
4.3
-
11
17
-
10
15
-
63
95
-
26
39
-
-
- 200
A
-
- 0.9
- 1.5
V
Gate-Source
Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay
Qgs
Fall Timec
Source-Drain Diode Ratings and
VGS = - 10 V
VDS = - 25 V, f = 1 MHz
VDS = - 15 V, ID = - 75 A
Qgd
Rg
f = 1 MHz
td(on)
tr
Timec
VGS = 0 V
td(off)
VDD = - 15 V, RL = 0.2
ID - 75 A, VGEN = - 10 V, Rg = 1
tf
pF
nC
ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 45 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1847-Rev. B, 30-Jul-12
Document Number: 67044
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM50P03-07
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
210
160
VGS = 10 V thru 6 V
180
VGS = 5 V
120
ID - Drain Current (A)
ID - Drain Current (A)
150
120
90
VGS = 4 V
60
80
TC = 25 °C
40
30
TC = 125 °C
VGS = 3 V
0
TC = - 55 °C
0
0
3
6
9
12
0
15
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
100
1.5
TC = - 55 °C
gfs - Transconductance (S)
ID - Drain Current (A)
TC = 25 °C
80
1.2
0.9
TC = 25 °C
0.6
0.3
TC = 125 °C
60
40
20
TC = - 55 °C
TC = 125 °C
0
0.0
0
1
2
3
4
0
5
16
VGS - Gate-to-Source Voltage (V)
48
64
80
Transconductance
Transfer Characteristics
10
VGS - Gate-to-Source Voltage (V)
0.030
0.024
RDS(on) - On-Resistance (Ω)
32
ID - Drain Current (A)
0.018
0.012
VGS = 4.5 V
VGS = 10 V
0.006
ID = 75 A
VDS = 15 V
8
6
4
2
0
0.000
0
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
S12-1847-Rev. B, 30-Jul-12
120
0
20
40
60
80
100
120
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 67044
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM50P03-07
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
8000
2.0
7000
ID = 30 A
VGS = 10 V
1.7
RDS(on) - On-Resistance
(Normalized)
C - Capacitance (pF)
6000
Ciss
5000
4000
3000
2000
Coss
Crss
1.4
1.1
0.8
1000
0
0
5
10
15
20
25
0.5
- 50 - 25
30
0
VDS - Drain-to-Source Voltage (V)
100
125
150
175
0.05
10
0.04
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
75
On-Resistance vs. Junction Temperature
100
1
0.1
TJ = 25 °C
0.01
0.03
0.02
TJ = 150 °C
0.01
TJ = 25 °C
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
2
6
8
10
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
- 30
1.2
VDS - Drain-to-Source Voltage (V)
0.9
ID = 250 μA
0.6
0.3
ID = 5 mA
0.0
- 0.3
- 0.6
- 50 - 25
4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
VGS(th) Variance (V)
50
TJ - Junction Temperature (°C)
Capacitance
0.001
0.0
25
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
S12-1847-Rev. B, 30-Jul-12
125
150
175
- 32
ID = 10 mA
- 34
- 36
- 38
- 40
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 67044
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM50P03-07
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
ID Limited
100 μs
1 ms
10 ms
100 ms
1 s,10 s, DC
10
1
0.1
0.01
0.01
Limited by RDS(on)*
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-1847-Rev. B, 30-Jul-12
Document Number: 67044
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM50P03-07
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67044.
S12-1847-Rev. B, 30-Jul-12
Document Number: 67044
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2022
1
Document Number: 91000
