SQM60030E
www.vishay.com
Vishay Siliconix
Automotive N-Channel 80 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
TO-263
• Package with low thermal resistance
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
D
Top View
D
G
PRODUCT SUMMARY
VDS (V)
80
RDS(on) () at VGS = 10 V
G
0.0032
ID (A)
120
Configuration
N-Channel MOSFET
Single
Package
S
TO-263
ORDERING INFORMATION
Lead (Pb)-free and halogen-free
SQM60030E_GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
80
Gate-source voltage
VGS
± 20
TC = 25 °C
Continuous drain current a
Continuous source current (diode
TC = 125 °C
conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche Energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
V
120
120
IS
120
IDM
250
IAS
70
EAS
245
PD
UNIT
375
125
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
40
RthJC
0.4
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. Parametric verification ongoing
S18-0555-Rev. B, 04-Jun-2018
Document Number: 67284
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM60030E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0, ID = 250 μA
80
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3
3.5
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
IGSS
-
-
± 100
VGS = 0 V
VDS = 80 V
-
-
1
-
-
50
800
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = 80 V, TJ = 125 °C
VGS = 0 V
VDS = 80 V, TJ = 175 °C
-
-
On-state drain current a
ID(on)
VGS = 10 V
VDS 5 V
120
-
-
VGS = 10 V
ID = 30 A
-
0.0026
0.0032
VGS = 10 V
ID = 30 A, TJ = 125 °C
-
-
0.0051
VGS = 10 V
ID = 30 A, TJ = 175 °C
Drain-source on-state resistance a
Forward transconductance b
RDS(on)
gfs
VDS = 15 V, ID = 30 A
-
-
0.0062
-
105
-
-
9500
12 000
-
3300
4500
-
310
400
-
110
165
-
35
-
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain
charge c
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay
Fall time c
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 40 V, ID = 80 A
Qgd
Rg
f = 1 MHz
td(on)
tr
time c
VGS = 0 V
td(off)
VDD = 40 V, RL = 0.5
ID 80 A, VGEN = 10 V, Rg = 1
tf
pF
nC
-
15
-
0.7
1.45
2.2
-
19
30
-
13
20
-
39
60
-
9
15
-
-
250
A
-
0.9
1.5
V
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = 80 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0555-Rev. B, 04-Jun-2018
Document Number: 67284
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM60030E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
120
160
VGS = 10 V thru 6 V
VGS = 5 V
96
ID - Drain Current (A)
ID - Drain Current (A)
128
96
64
72
48
TC = 25°C
24
32
TC = 125°C
VGS = 4 V
TC = - 55°C
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
0
10
2
6
8
10
Transfer Characteristics
Output Characteristics
200
0.010
160
0.008
TC = - 55 °C
TC = 25 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
4
VGS - Gate-to-Source Voltage (V)
120
80
TC = 125 °C
0.006
0.004
VGS = 10 V
0.002
40
0.000
0
0
8
16
24
32
0
40
20
40
60
80
100
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
120
10
12000
C - Capacitance (pF)
9600
VGS - Gate-to-Source Voltage (V)
ID = 80 A
VDS = 40 V
Ciss
7200
4800
Coss
2400
8
6
4
2
Crss
0
0
0
16
32
48
64
80
0
25
50
75
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S18-0555-Rev. B, 04-Jun-2018
100
125
Document Number: 67284
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM60030E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.1
100
RDS(on) - On-Resistance (Normalized)
ID = 20 A
VGS = 10 V
1.8
IS - Source Current (A)
10
1.5
1.2
TJ = 150 °C
1
0.1
TJ = 25 °C
0.9
0.01
0.6
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
0.001
0.0
0.2
0.6
0.012
0.1
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
0.015
0.006
TJ = 150 °C
- 0.4
ID = 5 mA
- 0.9
ID = 250 μA
- 1.4
0.003
1.2
Source Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
0.009
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
TJ = 25 °C
0.000
0
2
4
6
8
10
- 1.9
- 50 - 25
0
25
50
75
100
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
125
150
175
1000
100
100
97
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
ID = 10 mA
94
91
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S18-0555-Rev. B, 04-Jun-2018
1 ms
10
1
0.1
88
85
- 50 - 25
100 μs
IDM Limited
0.01
0.01
ID Limited
Limited by RDS(on)*
TC = 25 °C
Single Pulse
10 ms
100 ms, 1 s
10 s, DC
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 67284
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM60030E
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67284.
S18-0555-Rev. B, 04-Jun-2018
Document Number: 67284
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD
-B-
L2
6
E1
K
D4
-A-
c2
D2
D3
A
E
L3
L
D
D1
E3
A
A
b2
b
e
c
Detail “A”
E2
0.010 M A M
2 PL
0°
L4
-5
°
INCHES
L1
DETAIL A (ROTATED 90°)
c*
c
c1
c1
M
b
b1
SECTION A-A
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
1.397
b2
0.045
0.055
1.143
Thin lead
0.013
0.018
0.330
0.457
Thick lead
0.023
0.028
0.584
0.711
Thin lead
0.013
0.017
0.330
0.431
Thick lead
0.023
0.027
0.584
0.685
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
D4
0.044
0.052
1.118
1.321
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.355
0.375
9.017
9.525
E3
0.072
0.078
1.829
1.981
e
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
Revison: 30-Sep-13
MILLIMETERS
DIM.
0.100 BSC
2.54 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
L4
M
0.010 BSC
-
0.254 BSC
0.002
-
0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
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1
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2022
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Document Number: 91000
