SQM60N06-15_GE3

SQM60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd 60 RDS(on) () at VGS = 10 V 0.015 ID (A) 56 Configuration Single • 100 % Rg and UIS Tested D • Characterization Ongoing • Compliant to RoHS Directive 2002/95/EC TO-263 G G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM60N06-15-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range V 56 32 IS 60 IDM 227 IAS 29 EAS 42 PD TC = 125 °C UNIT 107 35 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 1.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Case (Drain) °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S11-2035-Rev. C, 17-Oct-11 1 Document Number: 64710 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM60N06-15 www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb VDS VGS = 0, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 - 3.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) - - ± 100 VGS = 0 V VDS = 60 V - - 1.0 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250 VGS = 10 V VDS5 V 75 - - VGS = 10 V ID = 30 A - 0.012 0.015 VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.027 VGS = 10 V ID = 30 A, TJ = 175 °C gfs VDS = 15 V, ID = 30 A - - 0.033 - 61 - V nA μA A  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Qgs Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec - 1983 2480 - 314 395 Crss - 125 160 Qg - 33 50 - 8.9 - VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 30 V, ID = 60 A Qgd - 7.4 - 0.8 1.6 2.4 - 11 17 VDD = 30 V, RL = 0.5  ID  60 A, VGEN = 10 V, Rg = 1  - 12 18 - 21 32 - 7 11 - - 227 A - 0.9 1.5 V td(on) td(off) nC f = 1 MHz Rg tr pF tf  ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 30 A, VGS = 0 Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2035-Rev. C, 17-Oct-11 2 Document Number: 64710 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM60N06-15 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 100 V GS = 10 V thru 7 V 80 ID - Drain Current (A) ID - Drain Current (A) 80 60 V GS = 6 V 40 60 40 T C = 25 °C 20 20 V GS = 5 V T C = 125 °C V GS = 4 V T C = - 55 °C 0 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) 0 15 2 4 6 8 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.030 100 0.025 80 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) 10 T C = 25 °C T C = - 55 °C 60 40 T C = 125 °C 20 0.020 V GS = 10 V 0.015 0.010 0.005 0 0 0 12 24 36 ID - Drain Current (A) 48 0 60 Transconductance 20 40 60 ID - Drain Current (A) 80 100 On-Resistance vs. Drain Current 3000 10 ID = 60 A VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 2500 Ciss 2000 1500 Coss 1000 500 8 V DS = 30 V 6 4 2 Crss 0 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) 60 0 10 15 20 25 Qg - Total Gate Charge (nC) 30 35 Gate Charge Capacitance S11-2035-Rev. C, 17-Oct-11 5 3 Document Number: 64710 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM60N06-15 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 30 A 2.1 I S - Source Current (A) 1.7 1.3 0.9 1 T J = 25 °C 0.1 0.01 0.5 - 50 RDS(on) - On-Resistance (Ω) T J = 150 °C 10 V GS = 10 V 0.001 TJ - Junction Temperature (°C) 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage - 25 0 25 50 75 100 125 150 0 175 0.10 0.8 0.08 0.3 VGS(th) Variance (V) RDS(on) - On-Resistance (Normalized) 2.5 0.06 0.04 T J = 150 °C 0.2 1.2 - 0.2 ID = 5 mA - 0.7 ID = 250 μA - 1.2 0.02 T J = 25 °C - 1.7 - 50 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 - 25 0 On-Resistance vs. Gate-to-Source Voltage 25 50 75 100 TJ - Temperature (°C) 125 150 175 Threshold Voltage 80 VDS - Drain-to-Source Voltage (V) ID = 10 mA 76 72 68 64 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S11-2035-Rev. C, 17-Oct-11 4 Document Number: 64710 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM60N06-15 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited 100 100 μs ID - Drain Current (A) Limited by RDS(on)* 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 0.1 BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S11-2035-Rev. C, 17-Oct-11 5 Document Number: 64710 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM60N06-15 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64710. S11-2035-Rev. C, 17-Oct-11 6 Document Number: 64710 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 8 x 8L Case Outline D2 E5 L1 D3 K D3 D7 D5 D5 D7 D5 E1 E W3 W2 W1 D5 E2 E3 b2 K F Bottom view (single) 0.25 Gauge line Top view (single) E5 L θ e W4 D1 D E4 E1 E b1 D5 D4 A2 A1 b D6 E2 E3 W4 D6 W W3 W2 W1 D5 E4 b2 D4 b b1 D1 D e Bottom view (dual) DIM. A C A3 Top view (dual) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 1.70 1.80 1.90 0.067 0.071 MAX. 0.075 A1 0.00 0.08 0.13 0.000 0.003 0.005 A2 0.25 0.30 0.35 0.010 0.012 0.014 A3 0.55 0.62 0.70 0.022 0.024 0.028 b 0.92 1.00 1.08 0.036 0.039 0.043 b1 1.02 1.10 1.18 0.040 0.043 0.046 b2 7.80 7.90 8.00 0.307 0.311 0.315 c 0.20 0.25 0.30 0.008 0.010 0.012 D 8.00 8.10 8.25 0.315 0.319 0.325 D1 7.80 7.90 8.00 0.307 0.311 0.315 D2 6.70 6.80 6.90 0.264 0.268 0.272 D3 2.85 2.95 3.05 0.112 0.116 0.120 D4 6.11 6.21 6.31 0.241 0.244 0.248 D5 0.37 0.47 0.57 0.015 0.019 0.022 D6 2.49 2.59 2.69 0.098 0.102 0.106 D7 1.76 1.86 1.96 0.069 0.073 0.077 Revision: 16-Oct-17 Document Number: 67734 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. e 1.95 2.00 2.05 0.077 0.079 0.081 E 7.90 8.00 8.10 0.311 0.315 0.319 E1 6.12 6.22 6.32 0.241 0.245 0.249 E2 3.94 4.04 4.14 0.140 0.159 0.163 E3 4.69 4.79 4.89 0.185 0.189 0.193 E4 3.23 3.33 3.43 0.127 0.131 0.135 E5 0.65 0.75 0.85 0.026 0.030 0.033 F 0.00 0.10 0.15 0.000 0.004 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.80 0.90 1.00 0.031 0.035 0.039 W 0.30 0.40 0.50 0.012 0.016 0.020 W1 0.30 0.40 0.50 0.012 0.016 0.020 W2 4.39 4.49 4.59 0.173 0.177 0.181 W3 4.54 4.64 4.74 0.179 0.183 0.187 W4 0.32 0.37 0.42 0.013 0.015 0.017  6° 10° 14° 6° 10° 14° C17-1388-Rev. B, 16-Oct-17 DWG: 6026 Revision: 16-Oct-17 Document Number: 67734 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000