SQM70060EL_GE3

SQM70060EL www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 100 RDS(on) () at VGS = 10 V 0.0059 • Package with low thermal resistance RDS(on) () at VGS = 4.5 V 0.0080 • AEC-Q101 qualified ID (A) • 100 % Rg and UIS tested 75 Configuration • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 Single Package TO-263 D TO-263 G S D Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage SYMBOL VDS LIMIT 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 75 67 IS 75 IDM 180 IAS 60 EAS 180 PD UNIT 166 55 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 0.9 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB mount c °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). S16-0653-Rev. A, 18-Apr-16 Document Number: 67764 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM70060EL www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 100 V - - 1 VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 100 V, TJ = 175 °C - - 500 VGS = 10 V VDS  5 V 50 - - VGS = 10 V ID = 30 A - 0.0046 0.0059 VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.0099 VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.0123 VGS = 4.5 V ID = 20 A - 0.0056 0.0080 - 95 - VDS = 15 V, ID = 25 A V nA μA A  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge c Gate-Source Charge c Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c - 4170 5500 - 1935 2600 Crss - 160 220 Qg - 66 100 Qgs VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 50 V, ID = 50 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = 50 V, RL = 1.08  ID  50 A, VGEN = 10 V, Rg = 1  tf - 14 - - 12 - 0.90 1.92 3 - 13 25 pF nC  - 21 35 - 34 60 - 13 25 - - 180 A - 0.90 1.5 V ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 50 A, VGS = 0 Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.         Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0653-Rev. A, 18-Apr-16 Document Number: 67764 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM70060EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 200 175 10000 10000 VGS = 10 V thru 5 V 80 100 40 1000 105 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) 140 VGS = 4 V 1st line 2nd line 2nd line ID - Drain Current (A) 160 70 100 TC = 25 °C 35 TC = 125 °C VGS = 3 V 0 0 2 4 6 8 TC = -55 °C 0 10 10 0 2 4 10 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 125 0.015 10000 10000 1000 75 TC = 125 °C 50 100 25 0 6 12 18 24 1000 0.009 VGS = 4.5 V 0.006 100 VGS = 10 V 0.003 0 10 0 0.012 30 10 0 20 40 100 Transconductance On-Resistance vs. Drain Current Axis Title 3200 100 Coss 1600 Crss 0 10 40 60 80 100 10000 ID = 50 A VDS = 50 V 8 1000 6 1st line 2nd line 1st line 2nd line Ciss 2nd line VGS - Gate-to-Source Voltage (V) 1000 4800 4 100 2 0 10 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S16-0653-Rev. A, 18-Apr-16 120 10 10000 6400 2nd line C - Capacitance (pF) 80 ID - Drain Current (A) 2nd line Axis Title 20 60 ID - Drain Current (A) 2nd line 8000 0 1st line 2nd line TC = 25 °C 2nd line RDS(on) - On-Resistance (Ω) 100 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 100 Document Number: 67764 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM70060EL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 30 A 10 2nd line IS - Source Current (A) VGS = 10 V 1000 1.7 1.3 VGS = 4.5 V 100 0.9 0.5 0 25 50 1000 1 TJ = 25 °C 0.1 100 0.01 0.001 10 -50 -25 TJ = 150 °C 75 100 125 150 175 10 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.05 0.5 10000 10000 0.1 1000 0.03 0.02 100 TJ = 150 °C 0.01 0 2 4 8 -0.7 100 ID = 250 μA -1.5 10 6 ID = 5 mA -1.1 TJ = 25 °C 0.00 1000 -0.3 1st line 2nd line 2nd line VGS(th) Variance (V) 0.04 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line 2.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.5 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 10000 ID = 1 mA 121 1000 117 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 125 113 100 109 105 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature S16-0653-Rev. A, 18-Apr-16 Document Number: 67764 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM70060EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 10000 IDM limited 100 μs ID limited 10 1000 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on) (1) 100 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S16-0653-Rev. A, 18-Apr-16 Document Number: 67764 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM70060EL www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.                                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67764. S16-0653-Rev. A, 18-Apr-16 Document Number: 67764 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: SQM70060EL_GE3