SQP10250E_GE3

SQP10250E www.vishay.com Vishay Siliconix Automotive N-Channel 250 V (D-S) 175 °C MOSFET FEATURES • TrenchFET® power MOSFET TO-220AB • Package with low thermal resistance • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View G D S D PRODUCT SUMMARY VDS (V) G 250 RDS(on) () at VGS = 10 V 0.0300 RDS(on) () at VGS = 7.5 V 0.0320 ID (A) N-Channel MOSFET 53 Configuration S Single Package TO-220 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 250 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C ID TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C Operating junction and storage temperature range 53 120 IDM 180 IAS 41 PD TC = 125 °C V 30 IS EAS UNIT 84 250 83 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c RthJA 40 RthJC 0.6 °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) S18-0262-Rev. A, 05-Mar-18 Document Number: 76717 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP10250E www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 250 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b Dynamic IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 250 V - - 1 VGS = 0 V VDS = 250 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 250 V, TJ = 175 °C - - 600 VGS = 10 V VDS  5 V 30 - - VGS = 10 V ID = 15 A - 0.0244 0.0300 VGS = 7.5 V ID = 10 A - 0.0260 0.0320 VGS = 10 V ID = 15 A, TJ = 125 °C - - 0.0641 VGS = 10 V ID = 15 A, TJ = 175 °C - - 0.0853 - 50 - VDS = 15 V, ID = 15 A V nA μA A  S b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate Resistance Rg Turn-on delay time c Rise time c Turn-off delay time c Fall time c - 2880 4050 - 1480 2100 - 58 85 - 50 75 - 12 - - 15 - f = 1 MHz 1.40 2.84 4.40 - 14 30 VDD = 125 V, RL = 12.5  ID  10 A, VGEN = 10 V, Rg = 1  - 6 15 - 38 60 - 10 20 VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 125 V, ID = 10 A td(on) tr td(off) tf pF nC  ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr IF = 20 A, VGS = 0 V - - 180 - 0.82 1.5 V - 155 310 ns - 933 1900 nC - 122 - ns Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - 33 - IRM(REC) - -11.6 - Body diode peak reverse recovery current IF = 10 A, di/dt = 100 A/μs A A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0262-Rev. A, 05-Mar-18 Document Number: 76717 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP10250E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 VGS = 10 V thru 8 V VGS = 7 V 1000 VGS = 6 V 120 80 100 VGS = 5 V 40 2nd line ID - Drain Current (A) 96 1st line 2nd line 2nd line ID - Drain Current (A) 160 10000 120 1000 72 TC = 25 °C 48 100 24 TC = 125 °C VGS = 4 V 0 2 4 6 8 TC = -55 °C 10 0 10 0 1st line 2nd line 200 0 10 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 10 Axis Title 90 10000 0.050 TC = -55 °C TC = 125 °C 36 100 18 0 2nd line RDS(on) - On-Resistance (Ω) 1000 54 1st line 2nd line 2nd line gfs - Transconductance (S) TC = 25 °C 72 10 0 10 20 30 40 0.040 VGS = 7.5 V 0.030 VGS = 10 V 0.020 0.010 0.000 50 0 12 24 Transconductance On-Resistance vs. Drain Current Axis Title Axis Title 2600 100 Crss 1300 Coss 0 10 150 200 250 10000 ID = 10 A VDS = 125 V 8 1000 6 1st line 2nd line Ciss 2nd line VGS - Gate-to-Source Voltage (V) 1000 3900 1st line 2nd line 2nd line C - Capacitance (pF) 5200 100 4 100 2 0 10 0 12 24 36 48 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S18-0262-Rev. A, 05-Mar-18 60 10 10000 50 48 ID - Drain Current (A) 2nd line 6500 0 36 ID - Drain Current (A) 2nd line 60 Document Number: 76717 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP10250E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 15 A 1000 2.1 VGS = 7.5 V 1.4 100 0.7 0 0 25 50 1000 TJ = 150 °C 1 100 0.1 TJ = 25 °C 0.01 10 -50 -25 10 1st line 2nd line 2nd line IS - Source Current (A) VGS = 10 V 2.8 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 3.5 75 100 125 150 175 10 0 0.2 0.5 0.7 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title 10000 0.7 0.120 2nd line VGS(th) Variance (V) 0.2 1000 0.090 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.150 TJ = 125°C 0.060 100 0.030 -0.3 ID = 5 mA -0.8 -1.3 ID = 250 μA TJ = 25 °C 0.000 10 0 2 4 6 8 -1.8 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title ID = 1 mA 310 298 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 322 286 274 262 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature S18-0262-Rev. A, 05-Mar-18 Document Number: 76717 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP10250E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 10000 IDM limited 100 μs 1000 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 100 Limited by RDS(on) (1) 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S18-0262-Rev. A, 05-Mar-18 Document Number: 76717 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP10250E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 5 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10- 1 1 3 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions                                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76717 S18-0262-Rev. A, 05-Mar-18 Document Number: 76717 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000