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SQP120N06-06_GE3

SQP120N06-06_GE3

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO-220AB

  • 描述:

    MOSFET N-CH 60V 119A TO220AB

  • 数据手册
  • 价格&库存
SQP120N06-06_GE3 数据手册
SQP120N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 60 RDS(on) (Ω) at VGS = 10 V • Package with low thermal resistance 0.006 ID (A) • AEC-Q101 qualified d 119 Configuration • 100 % Rg and UIS tested Single Package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-220 TO-220AB D G Top View G D S N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current Continuous Source Current (Diode Conduction) TC = 125 °C a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 119 68 IS 120 IDM 480 IAS 65 EAS 211 PD UNIT 175 56 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 0.88 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. S15-1876-Rev. B, 10-Aug-15 Document Number: 62853 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N06-06 www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic VDS VGS = 0, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 60 V - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250 VGS = 10 V VDS ≥ 5 V 120 - - VGS = 10 V ID = 30 A - 0.0045 0.0060 VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.0104 VGS = 10 V ID = 30 A, TJ = 175 °C VDS = 15 V, ID = 30 A - - 0.0129 - 94 - - 5196 6495 - 708 885 V nA μA A Ω S b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 336 420 Total Gate Charge c Qg - 96.5 145 Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time Rise Time c Turn-Off Delay Time c Fall Time c VDS = 25 V, f = 1 MHz - 24.6 - 27.2 - f = 1 MHz 0.3 1 1.7 td(on) - 16 24 tr VDD = 30 V, RL = 0.4 Ω ID ≅ 75 A, VGEN = 10 V, Rg = 1 Ω - 14 21 - 34 51 - 9 14 - - 480 A - 0.9 1.5 V td(off) VGS = 10 V VDS = 30 V, ID = 75 A pF - Rg c VGS = 0 V tf nC Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 75 A, VGS = 0 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1876-Rev. B, 10-Aug-15 Document Number: 62853 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N06-06 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 225 150 VGS = 10 V thru 7 V 200 120 150 ID - Drain Current (A) ID - Drain Current (A) 175 VGS = 6 V 125 100 75 50 90 60 TC = 25 °C 30 VGS = 5 V 25 TC = 125 °C 0 TC = -55 °C 0 0 4 8 12 16 20 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 200 1.2 160 gfs - Transconductance (S) ID - Drain Current (A) TC = -55 °C 0.9 0.6 TC = 25 °C 0.3 TC = 125 °C TC = 25 °C 120 TC = 125 °C 80 40 TC = -55 °C 0.0 0 0 2 4 6 8 0 10 14 0.020 10 000 0.016 8000 0.012 0.008 VGS = 10 V 6000 60 80 100 ID - Drain Current (A) On-Resistance vs. Drain Current S15-1876-Rev. B, 10-Aug-15 70 4000 0 0.000 40 56 Ciss 2000 0.004 20 42 Transconductance C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Transfer Characteristics 0 28 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) 120 Coss Crss 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62853 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N06-06 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.1 RDS(on) - On-Resistance(Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 110 A VDS = 20 V 8 6 4 2 0 0 20 40 60 80 1.2 0.9 -25 50 75 100 125 150 Gate Charge On-Resistance vs. Junction Temperature 175 0.05 RDS(on) - On-Resistance (Ω) 0.04 1 0.1 TJ = 25 °C 0.01 0.03 0.02 TJ = 150 °C 0.01 TJ = 25 °C 0.2 0.4 0.6 0.8 1.0 0.00 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 80 0.6 VDS - Drain-to-Source Voltage (V) 0.2 VGS(th) Variance (V) 25 TJ - Junction Temperature (°C) TJ = 150 °C -0.2 ID = 5 mA -0.6 -1.0 ID = 250 μA -1.4 -1.8 -50 0 Qg - Total Gate Charge (nC) 10 IS - Source Current (A) 1.5 0.6 -50 100 100 0.001 0.0 ID = 10 A VGS = 10 V 1.8 -25 0 25 50 75 100 125 150 175 77 ID = 10 mA 74 71 68 65 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature S15-1876-Rev. B, 10-Aug-15 Document Number: 62853 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N06-06 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 ID - Drain Current (A) 100 IDM Limited 100 μs 1 ms 10 10 ms 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on)* BVDSS Limited TC = 25 °C Single Pulse 0.1 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1876-Rev. B, 10-Aug-15 Document Number: 62853 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N06-06 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62853. S15-1876-Rev. B, 10-Aug-15 Document Number: 62853 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N06-06 www.vishay.com REVISION HISTORY REVISION B a DATE 04-Aug-15 Vishay Siliconix DESCRIPTION OF CHANGE • Revised Rg minimum limit Note a. As of April 2014 S15-1876-Rev. B, 10-Aug-15 Document Number: 62853 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000
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