SQP60N06-15_GE3

SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd 56 Configuration • 100 % Rg and UIS Tested Single • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D TO-220AB G S N-Channel MOSFET G D S Top View ORDERING INFORMATION Package TO-220 Lead (Pb)-free and Halogen-free SQP60N06-15-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current Continuous Source Current (Diode ID TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH Operating Junction and Storage Temperature Range 32 IS 60 190 IAS 29 PD TC = 125 °C V 56 IDM EAS TC = 25 °C UNIT 42 107 35 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 1.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Case (Drain) °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S13-0840-Rev. A, 22-Apr-13 1 Document Number: 63554 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP60N06-15 www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb VDS VGS = 0, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 - 3.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) - - ± 100 VGS = 0 V VDS = 60 V - - 1 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250 VGS = 10 V VDS5 V 75 - - VGS = 10 V ID = 30 A - 0.012 0.015 VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.027 VGS = 10 V ID = 30 A, TJ = 175 °C gfs VDS = 15 V, ID = 30 A - - 0.033 - 61 - V nA μA A  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Qgs Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec - 1983 2480 - 314 395 Crss - 125 160 Qg - 33 50 - 10.7 - VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 30 V, ID = 60 A Qgd - 8.8 - 0.8 1.6 2.4 - 11 17 VDD = 30 V, RL = 0.5  ID  60 A, VGEN = 10 V, Rg = 1  - 12 18 - 21 32 - 7 11 - - 190 A - 0.9 1.5 V td(on) td(off) nC f = 1 MHz Rg tr pF tf  ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 30 A, VGS = 0 Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-0840-Rev. A, 22-Apr-13 2 Document Number: 63554 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP60N06-15 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 100 V GS = 10 V thru 7 V 80 ID - Drain Current (A) ID - Drain Current (A) 80 60 V GS = 6 V 40 60 TC = 25 °C 40 20 20 TC = 125 °C V GS = 4 V V GS = 5 V TC = - 55 °C 0 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) 0 15 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.030 100 TC = 25 °C TC = - 55 °C RDS(on) - On-Resistance (Ω) 0.025 gfs - Transconductance (S) 80 60 TC = 125 °C 40 0.020 VGS = 10 V 0.015 0.010 0.005 20 0.000 0 0 0 12 24 36 48 20 40 60 80 100 60 ID - Drain Current (A) ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 10 3000 ID = 60 A VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 2500 Ciss 2000 1500 Coss 1000 500 8 VDS = 30 V 6 4 2 Crss 0 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) 0 60 14 21 28 35 Qg - Total Gate Charge (nC) Gate Charge Capacitance S13-0840-Rev. A, 22-Apr-13 7 3 Document Number: 63554 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP60N06-15 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 30 A 2.1 T J = 150 °C 10 V GS = 10 V I S - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.5 1.7 1.3 0.9 1 T J = 25 °C 0.1 0.01 0.5 - 50 0.001 - 25 0 25 50 75 100 125 150 0 175 0.2 TJ - Junction Temperature (°C) 1.2 Source Drain Diode Forward Voltage 0.10 0.8 0.08 0.3 VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) On-Resistance vs. Junction Temperature 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0.06 0.04 T J = 150 °C - 0.2 ID = 5 mA - 0.7 ID = 250 μA - 1.2 0.02 T J = 25 °C - 1.7 - 50 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 - 25 On-Resistance vs. Gate-to-Source Voltage 0 25 50 75 100 TJ - Temperature (°C) 125 150 175 Threshold Voltage 80 VDS - Drain-to-Source Voltage (V) ID = 10 mA 76 72 68 64 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S13-0840-Rev. A, 22-Apr-13 4 Document Number: 63554 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP60N06-15 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 ID - Drain Current (A) 100 100 μs IDM Limited 10 1 ms 10 ms 100 ms, 1 s,10 s, DC 1 Limited by RDS(on)* BVDSS Limited TC = 25 °C Single Pulse 0.1 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S13-0840-Rev. A, 22-Apr-13 5 Document Number: 63554 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP60N06-15 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63554. S13-0840-Rev. A, 22-Apr-13 6 Document Number: 63554 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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