SQR70090ELR_GE3

SQR70090ELR www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET FEATURES TO-252 Reverse Lead DPAK Unplated 1 mm max. • TrenchFET® power MOSFET 1 mm max. • Unplated drain tab (heatsink) • Package with low thermal resistance • AEC-Q101 qualified • 100 % Rg and UIS tested G S D D Top View Drain connected to tab. G The drain tab (heatsink) is unplated (at least 80 % of area). • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S Bottom View D PRODUCT SUMMARY VDS (V) 100 RDS(on) () at VGS = 10 V 0.0087 RDS(on) () at VGS = 4.5 V 0.0106 ID (A) G 86 Configuration Single Package N-Channel MOSFET S TO-252 Reverse Lead DPAK ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 86 50 IS 100 IDM 150 IAS 45 EAS 101 PD UNIT 136 45 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 50 RthJC 1.1 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB mount c °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). S16-1763-Rev. A, 05-Sep-16 Document Number: 75462 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR70090ELR www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 100 V - - 1 VGS = 0 V VDS = 100 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 100 V, TJ = 175 °C - - 250 VGS = 10 V VDS  5 V 50 - - VGS = 10 V ID = 25 A - 0.0072 0.0087 VGS = 4.5 V ID = 20 A - 0.0087 0.0106 VGS = 10 V ID = 25 A, TJ = 125 °C - - 0.0144 VGS = 10 V ID = 25 A, TJ = 175 °C VDS = 15 V, ID = 25 A - - 0.0177 - 80 - - 2550 3500 - 1350 1900 V nA μA A  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 101 140 Total Gate Charge c Qg - 42 65 - 7 - Gate-Source Charge Gate-Drain c Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Qgs VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 50 V, ID = 50 A Qgd Rg td(off) nC - 8 - f = 1 MHz 1.4 2.9 4.4 - 12 20 VDD = 50 V, RL = 1  ID  50 A, VGEN = 10 V, Rg = 1  - 5 10 - 35 60 - 6 15 - - 150 A - 0.88 1.5 V td(on) tr pF tf  ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 25 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  S16-1763-Rev. A, 05-Sep-16 Document Number: 75462 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR70090ELR www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 150 110 10000 10000 VGS = 10 V thru 5 V 60 100 30 1000 66 TC = 25 °C 44 100 22 VGS = 3 V TC = 125 °C 0 4 6 8 10 10 0 2 Output Characteristics Transfer Characteristics Axis Title TC = 25 °C 1000 75 TC = 125 °C 50 100 25 0 2nd line RDS(on) - On-Resistance (Ω) TC = -55 °C 100 12 18 24 10000 0.020 1000 0.015 VGS = 4.5 V 0.010 100 0.005 VGS = 10 V 0 10 6 30 10 0 20 40 60 80 ID - Drain Current (A) 2nd line ID - Drain Current (A) 2nd line Transconductance On-Resistance vs. Drain Current Axis Title 10 Ciss 1000 1st line 2nd line 2400 1600 100 Coss 800 Crss 0 10 60 80 100 10000 ID = 50 A VDS = 50 V 8 1000 6 1st line 2nd line 3200 2nd line VGS - Gate-to-Source Voltage (V) 10000 40 4 100 2 0 10 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S16-1763-Rev. A, 05-Sep-16 100 Axis Title 4000 20 10 0.025 10000 1st line 2nd line 2nd line gfs - Transconductance (S) 8 VGS - Gate-to-Source Voltage (V) 2nd line Axis Title 0 6 VDS - Drain-to-Source Voltage (V) 2nd line 125 0 4 1st line 2nd line 2 TC = -55 °C 0 10 0 2nd line C - Capacitance (pF) 1st line 2nd line 1000 90 2nd line ID - Drain Current (A) 88 VGS = 4 V 1st line 2nd line 2nd line ID - Drain Current (A) 120 50 Document Number: 75462 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR70090ELR www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 VGS = 10 V 10 2nd line IS - Source Current (A) 1000 1.5 VGS = 4.5 V 1.2 100 0.9 0.6 0 25 50 1000 1 TJ = 25 °C 0.1 100 0.01 0.001 10 -50 -25 TJ = 150 °C 10 0 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.080 10000 10000 0.5 0.064 1000 0.048 0.032 100 TJ = 150 °C ID = 5 mA -0.3 1000 1st line 2nd line 2nd line VGS(th) Variance (V) 0.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line ID = 25 A 1.8 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.1 -0.7 ID = 250 μA 100 -1.1 0.016 TJ = 25 °C 0.000 0 2 -1.5 10 4 6 8 10 -50 -25 10 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 10000 ID = 1 mA 120 1000 116 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 124 112 100 108 104 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature S16-1763-Rev. A, 05-Sep-16 Document Number: 75462 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR70090ELR www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited 100 ID - Drain Current (A) 100 μs 10 1 ms 1 10 ms 100 ms 1 s, 10 s, DC Limited by RDS(on)* 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 50 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-2 4. Surface Mounted 10-1 1 10 Square Wave Pulse Duration (s) 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient S16-1763-Rev. A, 05-Sep-16 Document Number: 75462 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR70090ELR www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.                                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75462. S16-1763-Rev. A, 05-Sep-16 Document Number: 75462 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252 Reverse Lead Case Outline E b2 C1 M L2 A H D M E1 Area Z A1 D1 b b1 E1 Gage plane height (0.020) L3 L1 L A2 e C e1 Notes • Dimension L3 for reference only • Area Z: unplated area more than 80 % heatsink area and for partial plating part only DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 2.23 2.33 0.088 0.092 A1 0.64 0.89 0.025 0.035 A2 0.03 0.18 0.001 0.007 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.49 5.00 0.177 0.197 E 6.48 6.73 0.255 0.265 E1 4.32 - 0.170 e 2.28 BSC e1 4.57 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 L1 0.090 BSC 2.74 BSC 0.410 0.070 0.108 BSC L2 0.89 1.27 0.035 L3 1.15 1.52 0.040 0.050 0.060 M - 1.00 (reference only) - 0.039 (reference only) ECN: T16-0952-Rev. D, 16-Jan-17 DWG: 5894 Revision: 16-Jan-17 Document Number: 72206 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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