SQS140ENW-T1_GE3

SQS140ENW www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® • TrenchFET® Gen IV power MOSFET 1212-8SLW D D D 7 8 D 6 5 • AEC-Q101 qualified • 100 % Rg and UIS tested • Wettable flank terminals • Low thermal resistance with 0.75 mm profile 3. 3 m m 1 3.3 mm Top View 3 4 S G Bottom View 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Marking code: Q042 PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V G 40 0.00253 ID (A) e 152 Configuration Single S N-Channel MOSFET ORDERING INFORMATION Package PowerPAK ® 1212-8SLW Lead (Pb)-free and halogen-free SQS140ENW (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 TC = 25 °C Continuous drain current e Continuous source current (diode conduction) TC = 125 °C e Pulsed drain current a, e Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a, e L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 87 IS 108 350 IAS 31.5 EAS 49.6 TJ, Tstg Soldering recommendations (peak temperature) c V 152 IDM PD UNIT 119 39 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) d PCB mount b SYMBOL LIMIT RthJA 54 RthJC 1.26 UNIT °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. When mounted on 1" square PCB (FR4 material) c. See solder profile (www.vishay.com/doc?73257). A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection d. As per JESD51-14 e. Values based on RthJC and TC of 25 °C. Actual values achievable will be dependent on the thermal characteristics of the complete system S23-0317-Rev.B, 15-May-2023 Document Number: 63038 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS140ENW www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V VDS = 40 V - - 1 Zero gate voltage drain current IDSS VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 On-state drain current a ID(on) VGS = 10 V VDS  5 V 20 - - VGS = 10 V ID = 10 A - 0.0021 0.00253 VGS = 10 V ID = 10 A, TJ = 125 °C - - 0.0038 VGS = 10 V ID = 10 A, TJ = 175 °C - - 0.0043 - 55 - - 2222 3111 Gate-source threshold voltage Drain-source on-state resistance a Forward transconductance b Dynamic RDS(on) gfs VDS = 15 V, ID = 10 A V nA μA A  S b Input capacitance Ciss Output capacitance Coss - 923 1295 Reverse transfer capacitance Crss - 37 52 Total gate charge c Qg - 38 57 - 11 - - 8 - f = 1 MHz 0.5 1.1 1.7 td(on) - 13 20 tr VDD = 20 V, RL = 1.33  ID  15 A, VGEN = 10 V, Rg = 1  - 5 9 - 22 33 - 8 12 Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Rg Turn-on delay time c Rise time c Turn-off delay time c Fall time c td(off) VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 5 A tf Source-Drain Diode Ratings and Characteristic ISM Forward voltage VSD trr IF = 10 A, VGS = 0 V  ns - - 350 A - 0.82 1.1 V - 38 78 ns - 34 70 nC - 19 - Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - 20 - IRM(REC) - -1.6 -3.2 Body diode peak reverse recovery current nC b Pulsed current a Body diode reverse recovery time pF IF = 5 A, di/dt = 100 A/μs ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S23-0317-Rev.B, 15-May-2023 Document Number: 63038 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS140ENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 450 275 10000 10000 VGS = 10 V thru 7 V VGS = 6 V 180 100 VGS = 5 V 90 1000 165 1st line 2nd line 1000 270 2nd line ID - Drain Current (A) 220 1st line 2nd line 110 55 VGS = 4 V TC = 125 °C 0 2 4 6 8 10 10 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 140 50 10000 TC = 25 °C 10000 TC = -55 °C 1000 TC = 125 °C 70 100 35 2nd line ID - Drain Current (A) 40 105 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 0 10 0 1000 30 TC = 25 °C 20 100 10 TC = 125 °C 0 20 40 60 80 TC = -55 °C 0 10 0 10 0 100 1 2 3 4 5 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) Transconductance Transfer Characteristics 0.008 Coss 1st line 2nd line 1000 Crss 100 100 10000 0.006 1000 1st line 2nd line Ciss 2nd line RDS(on) - On-Resistance (Ω) 10000 1000 6 Axis Title Axis Title 10 000 2nd line C - Capacitance (pF) 100 TC = 25 °C 1st line 2nd line 2nd line ID - Drain Current (A) 360 0.004 VGS = 7.5 V 100 0.002 VGS = 10 V 10 10 0 8 16 24 32 40 0 10 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current S23-0317-Rev.B, 15-May-2023 100 Document Number: 63038 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS140ENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 1000 6 4 100 10000 10 1 100 0.1 2 TJ = 25 °C 0 0.01 10 8 16 24 32 10 0 40 0.2 0.4 VSD - Source-to-Drain Voltage (V) Gate Charge Source Drain Diode Forward Voltage Axis Title 1.0 Axis Title 0.7 10000 ID = 10 A 10000 1.4 1000 VGS = 7.5 V 1.2 1.0 100 2nd line VGS(th) - Variance (V) 0.3 VGS = 10 V 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 0.8 Qg - Total Gate Charge (nC) 1.8 1.6 0.6 0.8 -0.1 1000 ID = 5 mA 1st line 2nd line 0 -0.5 -0.9 100 ID = 250 μA -1.3 0.6 -1.7 10 -50 -25 0 25 50 75 100 125 150 175 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Threshold Voltage Axis Title Axis Title 57 0.006 1000 1st line 2nd line TJ = 150 °C 0.004 100 TJ = 125 °C 0.002 TJ = 25 °C 0 10 0 2 4 6 8 10 2nd line VDS - Drain-to-Source Voltage (V) 10000 10000 56 ID = 1 mA 55 1000 54 1st line 2nd line 0.008 2nd line RDS(on) - On-Resistance (Ω) 1000 TJ = 150 °C 1st line 2nd line ID = 5 A VDS = 20 V 8 2nd line IS - Source Current (A) 10000 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 10 53 52 100 51 50 49 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature S23-0317-Rev.B, 15-May-2023 Document Number: 63038 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS140ENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 10000 IDM limited ID limited 1000 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 μs 1 ms 1 Limited by RDS(on) 10ms, 100 ms, 100 1 s, 10 s, DC BVDSS limited 0.1 TC = 25 °C, single pulse 0.01 0.01 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S23-0317-Rev.B, 15-May-2023 Document Number: 63038 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS140ENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1 Duty Cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.2 0.1 0.1 100 0.05 0.02 Single pulse 0.01 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 10 1.00E+00 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Axis Title Duty Cycle = 0.5 1000 0.2 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 1 0.1 0.05 0.02 100 0.01 Single pulse 0.001 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 1.00E+02 10 1.00E+03 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63038. S23-0317-Rev.B, 15-May-2023 Document Number: 63038 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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