SQS160ELNW-T1_GE3

SQS160ELNW www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PowerPAK® • TrenchFET® Gen IV power MOSFET 1212-8SLW D D D 7 8 D 6 5 • AEC-Q101 qualified • 100 % Rg and UIS tested • Wettable flank terminals • Low thermal resistance with 0.75 mm profile 3. 3 m m 1 3.3 mm Top View 3 4 S G Bottom View 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Marking code: Q045 PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.0059 RDS(on) () at VGS = 10 V 0.0038 ID (A) S 141 Configuration Package G 60 Single N-Channel MOSFET PowerPAK 1212-8SLW ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 60 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C TC = 125 °C Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 81 179 IDM 192 IAS 30 EAS 45 TJ, Tstg Soldering recommendations (peak temperature) c V 141 IS PD UNIT 197 66 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount b SYMBOL LIMIT RthJA 81 RthJC 0.76 UNIT °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. When mounted on 1" square PCB (FR4 material) c. See solder profile (www.vishay.com/doc?73257). A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection   S23-0107-Rev. B, 20-Feb-2023 Document Number: 62021 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS160ELNW www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V VDS = 60 V - - 1 Zero gate voltage drain current IDSS VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 150 On-state drain current a ID(on) VGS = 10 V VDS  5 V 20 - - - 0.0038 0.0059 Gate-source threshold voltage VGS = 4.5 V Drain-source on-state resistance a Forward transconductance b RDS(on) gfs VGS = 10 V ID = 10 A - 0.0025 0.0038 VGS = 10 V ID = 10 A, TJ = 125 °C - - 0.0095 VGS = 10 V ID = 10 A, TJ = 175 °C - - 0.0113 - 90 - - 2761 3866 - 851 1192 - 67 94 - 47 71 - 10 - - 8 - 0.4 0.9 1.4 - 12 18 VDS = 15 V, ID = 20 A V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Gate-source charge c Gate-drain charge c Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c VGS = 0 V VDS = 25 V, f = 1 MHz Qg Qgs VGS = 10 V VDS = 30 V, ID = 4 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = 30 V, RL = 12 , ID  2.5 A, VGEN = 10 V, Rg = 1  tf Source-Drain Diode Ratings and Characteristic pF nC  - 4 8 - 32 48 - 14 21 - - 192 A - 0.82 1.1 V ns b Pulsed current a ISM Forward voltage VSD IF = 10 A, VGS = 0 V Body diode reverse recovery time trr - 38 76 ns Body diode reverse recovery charge Qrr - 35 70 nC Reverse recovery fall time ta - 19 - Reverse recovery rise time tb - 20 - IRM(REC) - -1.6 - Body diode peak reverse recovery current VDD = 48 V, IFM = 3 A, di/dt = 100 A/μs, R = 10 , L = 0.3 mH, pulse width = 2 μs ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S23-0107-Rev. B, 20-Feb-2023 Document Number: 62021 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS160ELNW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 320 320 10000 10000 VGS = 10 V thru 6 V 256 VGS = 4 V 128 100 64 1000 192 1st line 2nd line 1000 192 2nd line ID - Drain Current (A) VGS = 5 V 1st line 2nd line 128 64 TC = 125 °C VGS = 3 V TC = -55 °C 0 0 10 0 2 4 6 8 10 10 0 2 4 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 Axis Title Axis Title 10 000 10000 10000 TC = -55 °C Ciss 1000 TC = 25 °C 108 TC =1 25 °C 72 100 2nd line C - Capacitance (pF) 144 1st line 2nd line 2nd line gfs - Transconductance (S) 6 VDS - Drain-to-Source Voltage (V) 180 1000 1000 Coss Crss 100 100 36 0 10 0 20 40 60 80 10 100 10 0 12 24 36 48 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Transconductance Capacitance 60 Axis Title Axis Title 10 0.016 1000 1st line 2nd line 0.012 0.008 100 VGS = 4.5 V 0.004 2nd line VGS - Gate-to-Source Voltage (V) 10000 10000 ID = 4 A VDS = 30 V 8 1000 6 1st line 2nd line 0.020 2nd line RDS(on) - On-Resistance (Ω) 100 TC = 25 °C 1st line 2nd line 2nd line ID - Drain Current (A) 256 4 100 2 VGS = 10 V 0 10 0 20 40 60 80 100 0 10 0 10 20 30 40 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge S23-0107-Rev. B, 20-Feb-2023 50 Document Number: 62021 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS160ELNW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 2.5 TJ = 150 °C 1000 1 100 0.1 TJ = 25 °C 0.01 0.3 0.6 0.9 ID = 5 A 2.1 VGS = 10 V 1.7 1.3 VGS = 7.5 V 0.9 100 0.5 10 -50 -25 1.2 0 25 50 75 100 125 150 175 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source Drain Diode Forward Voltage On-Resistance vs. Junction Temperature Axis Title Axis Title 10000 0.015 0 1000 1st line 2nd line ID = 5 mA -0.3 -0.6 100 ID = 250 μA -0.9 2nd line RDS(on) - On-Resistance (Ω) 0.3 10000 0.012 1000 0.009 1st line 2nd line 0.6 2nd line VGS(th) - Variance (V) 1000 0.1 10 0 10000 1st line 2nd line 10 2nd line RDS(on) - On-Resistance (Normalized) 10000 1st line 2nd line 2nd line IS - Source Current (A) 100 TJ = 150 °C 0.006 100 TJ = 125 °C 0.003 TJ = 25 °C -1.2 10 -50 -25 0 25 50 75 0 10 100 125 150 175 0 2 4 6 8 10 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 76 10000 10000 ID = 1 mA 74 1000 70 68 100 ID limited 1000 100 μs 10 1st line 2nd line 72 2nd line ID - Drain Current (A) 100 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) IDM limited Limited by RDS(on) a 1 ms 10 ms 100 ms, 1 s, 100 10 s, DC 1 BVDSS limited 66 TC = 25 °C, single pulse 64 10 -50 -25 0 25 50 75 100 125 150 175 0.1 0.01 10 0.1 1 10 TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) Drain Source Breakdown vs. Junction Temperature Safe Operating Area 100 Note a. VGS > minimum VGS at which RDS(on) is specified S23-0107-Rev. B, 20-Feb-2023 Document Number: 62021 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS160ELNW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 81 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 Single pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62021. S23-0107-Rev. B, 20-Feb-2023 Document Number: 62021 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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