SQS482ENW
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Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® 1212-8W Single
D
5
3.
3
m
D
6
D
7
• TrenchFET® power MOSFET
D
8
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
m
1
3.3
mm
Top View
4
G
Bottom View
3
S
2
S
1
S
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Marking code: Q034
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
0.0085
RDS(on) () at VGS = 4.5 V
0.0100
ID (A)
Configuration
Package
G
30
16
S
Single
N-Channel MOSFET
PowerPAK 1212-8W
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
30
Gate-source voltage
VGS
± 20
Continuous drain current a
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
16
16
IDM
64
IAS
31
EAS
48
TJ, Tstg
Soldering recommendations (peak temperature) e, f
V
16
IS
PD
UNIT
62
20
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
LIMIT
RthJA
81
RthJC
2.4
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. Parametric verification ongoing
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S17-1217-Rev. A, 07-Aug-17
Document Number: 75543
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For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SQS482ENW
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
VDS
VGS = 0, ID = 250 μA
30
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 30 V
-
-
1
VGS = 0 V
VDS = 30 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 30 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS 5 V
20
-
-
VGS = 10 V
ID = 16.4 A
-
0.0070
0.0085
VGS = 10 V
ID = 16.4 A, TJ = 125 °C
-
-
0.0135
VGS = 10 V
ID = 16.4 A, TJ = 175 °C
-
-
0.0160
VGS = 4.5 V
ID = 16.4 A
-
0.0080
0.0100
-
70
-
VDS = 15 V, ID = 16.4 A
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall Time c
Rg
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 15 V, ID = 10 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 15 V, RL = 3
ID 5 A, VGEN = 10 V, Rg = 1
tf
Source-Drain Diode Ratings and Characteristics
-
1492
1865
-
280
350
-
108
135
-
26
39
-
4.7
-
-
4.3
-
5
10
20
-
7
11
-
21
32
-
49
74
-
18
27
pF
nC
ns
b
Pulsed current a
ISM
Forward voltage
VSD
IF = 15 A, VGS = 0
-
-
64
A
-
0.82
1.2
V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1217-Rev. A, 07-Aug-17
Document Number: 75543
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
60
60
VGS = 10 V thru 4 V
48
ID - Drain Current (A)
ID - Drain Current (A)
48
36
24
TC = 25 °C
24
12
VGS = 3 V
12
36
TC = 125 °C
TC = - 55 °C
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
10
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
Transfer Characteristics
Output Characteristics
10
100
8
80
gfs - Transconductance (S)
ID - Drain Current (A)
TC = - 55 °C
6
4
TC = 25 °C
2
TC = 25 °C
60
TC = 125 °C
40
20
TC = 125 °C
TC = - 55 °C
0
0
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
0
4
16
20
6
12
18
24
VDS - Drain-to-Source Voltage (V)
30
Transconductance
Transfer Characteristics
0.020
2000
Ciss
1600
0.015
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
8
12
ID - Drain Current (A)
0.010
VGS = 4.5 V
VGS = 10 V
0.005
1200
800
Coss
400
0
Crss
0
0
12
24
36
ID - Drain Current (A)
48
On-Resistance vs. Drain Current
S17-1217-Rev. A, 07-Aug-17
60
0
Capacitance
Document Number: 75543
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For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQS482ENW
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
ID = 10 A
VDS = 15 V
8
ID = 16.4 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
6
4
2
1.7
1.4
VGS = 4.5 V
1.1
0.8
0.5
-50
0
0
5
10
15
20
Qg - Total Gate Charge (nC)
25
30
-25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
On-Resistance vs. Junction Temperature
Gate Charge
0.10
100
0.08
RDS(on) - On-Resistance (Ω)
10
IS - Source Current (A)
VGS = 10 V
TJ = 150 °C
1
TJ = 25 °C
0.1
0.06
0.04
TJ = 150 °C
0.02
0.01
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
0.5
40
VDS - Drain-to-Source Voltage (V)
VGS(th) Variance (V)
0.2
-0.1
ID = 5 mA
-0.4
-0.7
-1.0
-50
ID = 250 μA
-25
0
25
50
75 100
TJ - Temperature (°C)
Threshold Voltage
S17-1217-Rev. A, 07-Aug-17
125
150
175
ID = 1 mA
38
36
34
32
30
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
Document Number: 75543
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQS482ENW
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
100 μs
IDM Limited
ID - Drain Current (A)
10
1 ms
ID Limited
10 ms
100 ms,1 s,10 s,DC
1
Limited by RDS(on)*
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 81 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S17-1217-Rev. A, 07-Aug-17
Document Number: 75543
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For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQS482ENW
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75543.
S17-1217-Rev. A, 07-Aug-17
Document Number: 75543
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
PowerPAK® 1212-8W Case Outline
E2
E4
H
L
K
1
Z
2
4
5
3
4
b
6
θ
3
D5
2
D2
2
7
D1
D
8
e
1
M
θ
D4
A2
W
L1
θ
E3
Backside view of single pad
θ
c
A
A1
2
E1
E
DIM.
Detail Z
Notes
1 Inch will govern
2 Dimensions exclusive of mold gate burrs
3 Dimensions exclusive of mold flash and
cutting burrs
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.97
1.04
1.12
0.038
0.041
0.044
A1
0
-
0.05
0
-
0.002
A2
0
-
0.13
0
-
0.005
b
0.23
0.30
0.41
0.009
0.012
0.016
c
0.23
0.28
0.33
0.009
0.011
0.013
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.95
3.05
3.15
0.116
0.120
0.124
D2
1.98
2.11
2.24
0.078
0.083
0.088
D4
0.47 typ.
D5
2.3 typ.
0.0185 typ.
0.090 typ.
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
2.95
3.05
3.15
0.116
0.120
0.124
E2
1.47
1.60
1.73
0.058
0.063
0.068
E3
1.75
1.85
1.98
0.069
0.073
0.078
E4
0.34 typ.
0.013 typ.
e
0.65 BSC.
0.026 BSC
K
0.86 typ.
0.034 typ.
H
0.30
0.41
0.51
0.012
0.016
0.020
L
0.30
0.43
0.56
0.012
0.017
0.022
L1
0.06
0.13
0.20
0.002
0.005
0.008
0°
-
12°
0°
-
12°
W
0.15
0.25
0.36
0.006
0.010
0.014
M
0.125 typ.
0.005 typ.
ECN: C15-1530-Rev. B, 16-Nov-15
DWG: 6032
Revision: 16-Nov-15
Document Number: 64614
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
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7
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 09-Jul-2021
1
Document Number: 91000
