SQSA70CENW-T1_GE3

SQSA70CENW www.vishay.com Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 °C MOSFET FEATURES PowerPAK® 1212-8W Single D 5 3. 3 m D 6 D 7 • TrenchFET® power MOSFET D 8 • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 m 1 3.3 mm Top View 4 G Bottom View 3 S 2 S 1 S D Marking code: Q052 G PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V 150 0.0685 ID (A) Configuration 18 S Single N-Channel MOSFET ORDERING INFORMATION Package PowerPAK 1212-8W Lead (Pb)-free and halogen-free SQSA70CENW (for detailed order number please see www.vishay.com/doc?79776) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 150 Gate-source voltage VGS ± 20 Continuous drain current a TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 18 IS 18 40 IAS 18 EAS 16.2 TJ, Tstg Soldering recommendations (peak temperature) d, e V 11.2 IDM PD UNIT 62.5 20 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 81 RthJC 2.4 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S20-0926-Rev. A, 30-Nov-2020 Document Number: 63002 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQSA70CENW www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA 150 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V VDS = 150 V - - 1 Zero gate voltage drain current IDSS VGS = 0 V VDS = 150 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 150 V, TJ = 175 °C - - 150 On-state drain current a ID(on) VGS = 10 V VDS ≥ 5 V 10 - - VGS = 10 V ID = 7 A - 0.0554 0.0685 VGS = 10 V ID = 7 A, TJ = 125 °C - - 0.1296 VGS = 10 V ID = 7 A, TJ = 175 °C - - 0.1602 - 11 - - 384 540 Gate-source threshold voltage Drain-source on-state resistance a Forward transconductance b Dynamic RDS(on) gfs VDS = 15 V, ID = 7 A V nA μA A Ω S b Input capacitance Ciss Output capacitance Coss - 270 380 Reverse transfer capacitance Crss - 15 22 Total gate charge c Qg - 8 12 - 2.1 - - 2.1 - f = 1 MHz 0.80 1.61 2.41 td(on) - 10 20 tr VDD = 75 V, RL = 37.5 Ω ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω - 4 10 - 16 30 - 10 20 Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Rg Turn-on delay time c Rise time c Turn-off delay time c Fall time c td(off) VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 75 V, ID = 2 A tf Source-Drain Diode Ratings and Characteristic nC Ω ns b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr IF = 7 A, VGS = 0 V - - 40 A - 0.85 1.1 V - 43 90 ns - 87 175 nC - 38 - Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - 5 - IRM(REC) - -3.9 - Body diode peak reverse recovery current pF IF = 2 A, di/dt = 100 A/μs ns A Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0926-Rev. A, 30-Nov-2020 Document Number: 63002 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQSA70CENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 50 40 10000 10000 VGS = 10 V thru 8 V VGS = 6 V 20 100 VGS = 5 V 10 1000 24 1st line 2nd line 1000 30 2nd line ID - Drain Current (A) 32 VGS = 7 V 1st line 2nd line 2nd line ID - Drain Current (A) 40 16 TC = 25 °C 8 TC = -55 °C VGS = 4 V 0 0 10 0 2 4 6 8 100 TC = 125 °C 10 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 Axis Title 20 0.25 TC = 25 °C 12 TC = 125 °C 8 4 0 0.20 1000 0.15 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 2nd line gfs - Transconductance (S) TC = -55 °C 16 10000 0.10 0.05 0 0 8 16 24 32 40 10 0 10 20 Transconductance On-Resistance vs. Drain Current Axis Title 1st line 2nd line 1000 Coss 10 100 Crss 1 10 90 120 150 10000 ID = 2 A VDS = 75 V 8 1000 6 1st line 2nd line 100 2nd line VGS - Gate-to-Source Voltage (V) Ciss 60 4 100 2 0 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S20-0926-Rev. A, 30-Nov-2020 50 10 10000 30 40 ID - Drain Current (A) Axis Title 0 30 ID - Drain Current (A) 1000 2nd line C - Capacitance (pF) 100 VGS = 10 V 10 Document Number: 63002 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQSA70CENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 0.6 10000 10000 ID = 5 A 0.2 1000 1.6 1.1 100 0.6 1000 -0.2 ID = 5 mA -0.6 100 ID = 250 μA -1.0 0.1 -1.4 10 -50 -25 0 25 50 10 -50 -25 75 100 125 150 175 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Threshold Voltage Axis Title Axis Title 194 0.40 1000 1st line 2nd line 0.30 0.20 100 TJ = 150 °C 0.10 2nd line VDS - Drain-to-Source Voltage (V) 10000 10000 ID = 1 mA 188 1000 182 1st line 2nd line 0.50 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line VGS = 10 V 2nd line VGS(th) - Variance (V) 2.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.6 176 100 170 TJ = 25 °C 0 164 10 0 2 4 6 8 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 100 10000 100 10000 1 100 0.1 10 100 us 1000 ID limited 1st line 2nd line 1000 TJ = 150 °C 2nd line ID - Drain Current (A) 10 1st line 2nd line 2nd line IS - Source Current (A) IDM limited 1 ms 1 10 ms 100ms, 1 s, 10 s, DC Limited by RDS(on) a 100 0.1 BVDSS limited TJ = 25 °C TC = 25 °C, single pulse 0.01 10 0 0.3 0.6 0.9 1.2 1.5 0.01 0.01 0.1 1 10 100 VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V) Source Drain Diode Forward Voltage Safe Operating Area 10 1000 Note a. VGS > minimum VGS at which RDS(on) is specified S20-0926-Rev. A, 30-Nov-2020 Document Number: 63002 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQSA70CENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 81 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 Single pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63002. S20-0926-Rev. A, 30-Nov-2020 Document Number: 63002 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8W Case Outline E2 E4 H L K 1 Z 2 4 5 3 4 b 6 θ 3 D5 2 D2 2 7 D1 D 8 e 1 M θ D4 A2 W L1 θ E3 Backside view of single pad θ c A A1 2 E1 E DIM. Detail Z Notes 1 Inch will govern 2 Dimensions exclusive of mold gate burrs 3 Dimensions exclusive of mold flash and cutting burrs MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.97 1.04 1.12 0.038 0.041 0.044 A1 0 - 0.05 0 - 0.002 A2 0 - 0.13 0 - 0.005 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D4 0.47 typ. D5 2.3 typ. 0.0185 typ. 0.090 typ. E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 E4 0.34 typ. 0.013 typ. e 0.65 BSC. 0.026 BSC K 0.86 typ. 0.034 typ. H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008  0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 typ. 0.005 typ. ECN: C15-1530-Rev. B, 16-Nov-15 DWG: 6032 Revision: 16-Nov-15 Document Number: 64614 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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